Continuous-wave and SESAM mode-locked 2.3-µm Tm:LiYF4 lasers: Upconversion pumping at 1.45 µm von Bae, Ji Eun, Gaulke, Marco, Loiko, Pavel, Heidrich, Jonas, Golling, Matthias, Idlahcen, Said, Guillemot, Lauren, Benayad, Abdelmjid, Godin, Thomas, Keller, Ursula, Camy, Patrice, Hideur, Ammar

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Full optical SESAM characterization methods in the 1.9 to 3-µm wavelength regime von Heidrich, Jonas, Gaulke, Marco, Alaydin, Behcet Ozgur, Golling, Matthias, Barh, Ajanta, Keller, Ursula

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Full optical SESAM characterization methods in the 1.9 to 3-mu m wavelength regime von Heidrich, Jonas, Gaulke, Marco, Alaydin, Behcet Ozgur, Golling, Matthias, Barh, Ajanta, Keller, Ursula

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Optically Pumped GaSb-Based Thin-Disk Laser Design Considerations for CW and Dual-Comb Operation at a Center Wavelength Around 2 \rm \mum von Gaulke, Marco, Schuchter, Maximilian C., Huwyler, Nicolas, Golling, Matthias, Willenberg, Benjamin, Phillips, Christopher R., Keller, Ursula

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Optically Pumped GaSb-Based Thin-Disk Laser Design Considerations for CW and Dual-Comb Operation at a Center Wavelength Around 2 $\rm \mu$m von Gaulke, Marco, Schuchter, Maximilian C., Huwyler, Nicolas, Golling, Matthias, Willenberg, Benjamin, Phillips, Christopher R., Keller, Ursula

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High average output power from a backside- cooled 2-μm InGaSb VECSEL with full gain characterization von Gaulke, Marco, Heidrich, Jonas, Alaydin, B. Ozgur, Golling, Matthias, Barh, Ajanta, Keller, Ursula

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2-μm 1.5-W optically pumped semiconductor membrane laser von Schuchter, Maximilian C., Huwyler, Nicolas, Golling, Matthias, Gaulke, Marco, Keller, Ursula

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Gigahertz semiconductor laser at a center wavelength of 2 µm in single and dual-comb operation von Gaulke, Marco, Heidrich, Jonas, Huwyler, Nicolas, Schuchter, Maximilian, Golling, Matthias, Willenberg, Benjamin, Barh, Ajanta, Keller, Ursula

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324-fs Pulses From a SESAM Modelocked Backside-Cooled 2-μm VECSEL von Heidrich, Jonas, Gaulke, Marco, Golling, Matthias, Alaydin, Behcet Ozgur, Barh, Ajanta, Keller, Ursula

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Single-cavity dual-modelocked 2.36-µm laser von Barh, Ajanta, Nussbaum-Lapping, Alexander, Heidrich, Jonas, Gaulke, Marco, Golling, Matthias, Phillips, Christopher R, Keller, Ursula

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High average output power from a backside-cooled 2-µm InGaSb VECSEL with full gain characterization von Gaulke, Marco, Heidrich, Jonas, Özgür Alaydin, B., Golling, Matthias, Barh, Ajanta, Keller, Ursula

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Upconversion-pumped femtosecond thulium laser at 2309 nm mode-locked by a GaSb-based SESAM von Tyazhev, Aleksey, Bae, Ji Eun, Gaulke, Marco, Loiko, Pavel, Heidrich, Jonas, Golling, Matthias, Idlahcen, Said, Guillemot, Lauren, Godin, Thomas, Camy, Patrice, Keller, Ursula, Hideur, Ammar

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Low-Noise Femtosecond SESAM Modelocked Diode-Pumped Cr:ZnS Oscillator von Heidrich, Jonas, Barh, Ajanta, Camenzind, Sandro L., Willenberg, Benjamin, Gaulke, Marco, Golling, Matthias, Phillips, Christopher R., Keller, Ursula

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High-power low-noise 2-GHz femtosecond laser oscillator at 2.4 µm von Barh, Ajanta, Alaydin, B Özgür, Heidrich, Jonas, Gaulke, Marco, Golling, Matthias, Phillips, Christopher R, Keller, Ursula

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A unified kinetic model for adsorption and desorption – Applied to water on zeolite von Gaulke, Marco, Guschin, Viktor, Knapp, Sebastian, Pappert, Sandra, Eckl, Wilhelm

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3-W output power from a 2-µm InGaSb VECSEL using a hybrid metal-semiconductor Bragg reflector von Huwyler, Nicolas, Gaulke, Marco, Heidrich, Jonas, Golling, Matthias, Barh, Ajanta, Keller, Ursula

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Low-Temperature Electroluminescence Excitation Mapping of Excitons and Trions in Short-Channel Monochiral Carbon Nanotube Devices von Gaulke, Marco, Janissek, Alexander, Peyyety, Naga Anirudh, Alamgir, Imtiaz, Riaz, Adnan, Dehm, Simone, Li, Han, Lemmer, Uli, Flavel, Benjamin S, Kappes, Manfred M, Hennrich, Frank, Wei, Li, Chen, Yuan, Pyatkov, Felix, Krupke, Ralph

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Bandgap engineering, monolithic growth, and operation parameters of GaSb-based SESAMs in the 2–2.4 µm range von Alaydin, B. Özgür, Gaulke, Marco, Heidrich, Jonas, Golling, Matthias, Barh, Ajanta, Keller, Ursula

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Ionic liquid gating of single-walled carbon nanotube devices with ultra-short channel length down to 10nm von Janissek, Alexander, Lenz, Jakob, del Giudice, Fabio, Gaulke, Marco, Pyatkov, Felix, Dehm, Simone, Hennrich, Frank, Wei, Li, Chen, Yuan, Fediai, Artem, Kappes, Manfred, Wenzel, Wolfgang, Krupke, Ralph, Weitz, R. Thomas

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Ionic liquid gating of single-walled carbon nanotube devices with ultra-short channel length down to 10 nm von Janissek, Alexander, Lenz, Jakob, Giudice, Fabio del, Gaulke, Marco, Pyatkov, Felix, Dehm, Simone, Hennrich, Frank, Wei, Li, Chen, Yuan, Fediai, Artem, Kappes, Manfred, Wenzel, Wolfgang, Krupke, Ralph, Weitz, R. Thomas

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