Improvement in the leakage current characteristic of metal-insulator-metal capacitor by adopting RuO2 film as bottom electrode von Han, Jeong Hwan, Han, Sora, Lee, Woongkyu, Lee, Sang Woon, Kim, Seong Keun, Gatineau, Julien, Dussarrat, Christian, Hwang, Cheol Seong

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Electronic Structure of Cerium Oxide Gate Dielectric Grown by Plasma-Enhanced Atomic Layer Deposition von Kim, Woo-Hee, Maeng, W. J., Kim, Min-Kyu, Gatineau, Julien, Kim, Hyungjun

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Study on Initial Growth Behavior of RuO2 Film Grown by Pulsed Chemical Vapor Deposition: Effects of Substrate and Reactant Feeding Time von Han, Jeong Hwan, Lee, Sang Woon, Kim, Seong Keun, Han, Sora, Lee, Woongkyu, Hwang, Cheol Seong, Dussarat, Christian, Gatineau, Julien

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Growth of RuO2 Thin Films by Pulsed-Chemical Vapor Deposition Using RuO4 Precursor and 5% H2 Reduction Gas von Han, Jeong Hwan, Lee, Sang Woon, Kim, Seong Keun, Han, Sora, Hwang, Cheol Seong, Dussarrat, Christian, Gatineau, Julien

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Growth Characteristics and Film Properties of Cerium Dioxide Prepared by Plasma-Enhanced Atomic Layer Deposition von Kim, Woo-Hee, Kim, Min-Kyu, Maeng, W. J., Gatineau, Julien, Pallem, Venkat, Dussarrat, Christian, Noori, Atif, Thompson, David, Chu, Schubert, Kim, Hyungjun

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Plasma-Enhanced Atomic Layer Deposition of Cobalt Using Cyclopentadienyl Isopropyl Acetamidinato-Cobalt as a Precursor von Kim, Jae-Min, Lee, Han-Bo-Ram, Lansalot, Clement, Dussarrat, Christian, Gatineau, Julien, Kim, Hyungjun

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Growth characteristics and properties of indium oxide and indium-doped zinc oxide by atomic layer deposition von Kim, Donghyun, Nam, Taewook, Park, Jusang, Gatineau, Julien, Kim, Hyungjun

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Atomic Layer Deposition of Ruthenium Using the Novel Precursor bis(2,6,6-trimethyl-cyclohexadienyl)ruthenium von Gregorczyk, Keith, Henn-Lecordier, Laurent, Gatineau, Julien, Dussarrat, Christian, Rubloff, Gary

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Substrate Dependent Growth Behaviors of Plasma-Enhanced Atomic Layer Deposited Nickel Oxide Films for Resistive Switching Application von Song, Seul Ji, Lee, Sang Woon, Kim, Gun Hwan, Seok, Jun Yeong, Yoon, Kyung Jean, Yoon, Jung Ho, Hwang, Cheol Seong, Gatineau, Julien, Ko, Changhee

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Growth of Conductive SrRuO3 Films by Combining Atomic Layer Deposited SrO and Chemical Vapor Deposited RuO2 Layers von Han, Jeong Hwan, Lee, Woongkyu, Jeon, Woojin, Lee, Sang Woon, Hwang, Cheol Seong, Ko, Changhee, Gatineau, Julien

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Deposition of highly pure ruthenium thin films with a new metal-organic precursor von Gatineau, Julien, Dussarrat, Christian

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Study on Initial Growth Behavior of RuO 2 Film Grown by Pulsed Chemical Vapor Deposition: Effects of Substrate and Reactant Feeding Time von Han, Jeong Hwan, Lee, Sang Woon, Kim, Seong Keun, Han, Sora, Lee, Woongkyu, Hwang, Cheol Seong, Dussarat, Christian, Gatineau, Julien

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Chemical Vapor Deposition of Ru Thin Films with an Enhanced Morphology, Thermal Stability, and Electrical Properties Using a RuO4 Precursor von Han, Jeong Hwan, Lee, Sang Woon, Choi, Gyu-Jin, Lee, Sang Young, Hwang, Cheol Seong, Dussarrat, Christian, Gatineau, Julien

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A new RuO4 solvent solution for pure ruthenium film depositions von GATINEAU, Julien, YANAGITA, Kazutaka, DUSSARRAT, Christian

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Growth of Conductive SrRuO 3 Films by Combining Atomic Layer Deposited SrO and Chemical Vapor Deposited RuO 2 Layers von Han, Jeong Hwan, Lee, Woongkyu, Jeon, Woojin, Lee, Sang Woon, Hwang, Cheol Seong, Ko, Changhee, Gatineau, Julien

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Atomic Layer Deposition of Ruthenium Using the Novel Precursor bis(2,6,6-trimethyl-cyclohexadienyl)ruthenium von Gregorczyk, Keith, Henn-Lecordier, Laurent, Gatineau, Julien, Dussarrat, Christian, Rubloff, Gary

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Improvement in the leakage current characteristic of metal-insulator-metal capacitor by adopting RuO 2 film as bottom electrode von Han, Jeong Hwan, Han, Sora, Lee, Woongkyu, Lee, Sang Woon, Kim, Seong Keun, Gatineau, Julien, Dussarrat, Christian, Hwang, Cheol Seong

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Plasma-enhanced atomic layer deposition of Co using Co(MeCp)2 precursor von JUSANG PARK, LEE, Han-Bo-Ram, DOYOUNG KIM, JAEHONG YOON, LANSALOT, Clement, GATINEAU, Julien, CHEVREL, Henri, HYUNGJUN KIM

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Growth of RuO 2 Thin Films by Pulsed-Chemical Vapor Deposition Using RuO 4 Precursor and 5% H 2 Reduction Gas von Han, Jeong Hwan, Lee, Sang Woon, Kim, Seong Keun, Han, Sora, Hwang, Cheol Seong, Dussarrat, Christian, Gatineau, Julien

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Plasma-enhanced atomic layer deposition of Co using Co（MeCp）2 precursor von Jusang Park Han-Bo-Ram Lee Doyoung Kim Jaehong Yoon Clement Lansalot Julien Gatineau Henri Chevrel Hyungjun Kim

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