Intrinsic switching in Si-doped HfO2: A study of Curie–Weiss law and its implications for negative capacitance field-effect transistor von Gastaldi, Carlotta, Cavalieri, Matteo, Saeidi, Ali, O'Connor, Eamon, Kamaei, Sadegh, Rosca, Teodor, Stolichnov, Igor, Ionescu, Adrian Mihai

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Subthermionic negative capacitance ion sensitive field-effect transistor von Bellando, Francesco, Dabhi, Chetan K., Saeidi, Ali, Gastaldi, Carlotta, Chauhan, Yogesh S., Ionescu, Adrian M.

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Gate energy efficiency and negative capacitance in ferroelectric 2D/2D TFET from cryogenic to high temperatures von Kamaei, Sadegh, Saeidi, Ali, Gastaldi, Carlotta, Rosca, Teodor, Capua, Luca, Cavalieri, Matteo, Ionescu, Adrian M.

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Ferroelectric Supercapacitors by Combining Polarization Switching and Negative Capacitance Effects for On-Chip Energy Storage von Kamaei, Sadegh, Ghini, Michele, Gilani, Ali, Gastaldi, Carlotta, Collette, Eloi, Ionescu, Adrian Mihai

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Ferroelectric gating of two-dimensional semiconductors for the integration of steep-slope logic and neuromorphic devices von Kamaei, Sadegh, Liu, Xia, Saeidi, Ali, Wei, Yingfen, Gastaldi, Carlotta, Brugger, Juergen, Ionescu, Adrian M.

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Negative Capacitance in HfO2 Gate Stack Structures With and Without Metal Interlayer von Gastaldi, Carlotta, Cavalieri, Matteo, Saeidi, Ali, O'Connor, Eamon, Bellando, Francesco, Stolichnov, Igor, Ionescu, Adrian M.

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Negative Capacitance in HfO 2 Gate Stack Structures With and Without Metal Interlayer von Gastaldi, Carlotta, Cavalieri, Matteo, Saeidi, Ali, O'Connor, Eamon, Bellando, Francesco, Stolichnov, Igor, Ionescu, Adrian M.

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Zn/P ratio and microstructure defines carrier density and electrical transport mechanism in earth-abundant Zn3-xP2+y thin films von Paul, Rajrupa, Conti, Vanessa, Zamani, Mahdi, Escobar-Steinvall, Simon, Sánchez-Martín, Héctor, Gastaldi, Carlotta, Ionescu, Mihai Adrian, Íñiquez-de-la-Torre, Ignacio, Dimitrievska, Mirjana, Fontcuberta i Morral, Anna, Piazza, Valerio

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Experimental Investigation of Pulsed Laser Deposition of Ferroelectric Gd:HfO2 in a CMOS BEOL Compatible Process von Cavalieri, Matteo, O’Connor, Éamon, Gastaldi, Carlotta, Stolichnov, Igor, Ionescu, Adrian M

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Evidences of areal switching in Vacancy-Modulated Conductive Oxide (VMCO) memory von Celano, Umberto, Gastaldi, Carlotta, Govoreanu, Bogdan, Richard, Olivier, Bender, Hugo, Goux, Ludovic, Kar, Gouri Sankar, Vandervorst, Wilfried

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Experimental Investigation of Pulsed Laser Deposition of Ferroelectric Gd:HfO 2 in a CMOS BEOL Compatible Process von Cavalieri, Matteo, O’Connor, Éamon, Gastaldi, Carlotta, Stolichnov, Igor, Ionescu, Adrian M.

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Subthermionic negative capacitance ion sensitive field-effect transistor von Bellando, Francesco, Dabhi, Chetan K, Saeidi, Ali, Gastaldi, Carlotta, Chauhan, Yogesh S, Ionescu, Adrian M

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Gate energy efficiency and negative capacitance in ferroelectric 2D/2D TFET from cryogenic to high temperatures von Kamaei, Sadegh, Saeidi, Ali, Gastaldi, Carlotta, Rosca, Teodor, Capua, Luca, Cavalieri, Matteo, Ionescu, Adrian M

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Precocious Puberty Diagnoses Spike, COVID-19 Pandemic, and Body Mass Index: Findings From a 4-year Study von Fava, Daniela, Pepino, Carlotta, Tosto, Valentina, Gastaldi, Roberto, Pepe, Alessia, Paoloni, Dalila, Strati, Marina Francesca, Angelelli, Alessia, Calandrino, Andrea, Tedesco, Caterina, Camia, Tiziana, Allegri, Anna Elsa Maria, Patti, Giuseppa, Casalini, Emilio, Bassi, Marta, Calevo, Maria Grazia, Napoli, Flavia, Maghnie, Mohamad

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