Randomized double-blind, placebo-controlled trial of sublingual immunotherapy with a Pru p 3 quantified peach extract von Fernández-Rivas, M, Garrido Fernández, S, Nadal, J.A, Alonso Díaz de Durana, M.D, García, B.E, González-Mancebo, E, Martín, S, Barber, D, Rico, P, Tabar, A.I

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Correction to Absence of Quantum-Confined Stark Effect in GaN Quantum Disks Embedded in (Al,Ga)N Nanowires Grown by Molecular Beam Epitaxy von Sinito, C, Corfdir, P, Pfüller, C, Gao, G, Bartolomé, J, Kölling, S, Doblado, A. Rodil, Jahn, U, Lähnemann, J, Auzelle, T, Zettler, J. K, Flissikowski, T, Koenraad, P, Grahn, H. T, Geelhaar, L, Fernández-Garrido, S, Brandt, O

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The hydride vapor phase epitaxy of GaN on silicon covered by nanostructures von Jahn, U, Musolino, M, Lähnemann, J, Dogan, P, Garrido, S Fernández, Wang, J F, Xu, K, Cai, D, Bian, L F, Gong, X J, Yang, H

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Green luminescence in Mg-doped GaN von Reshchikov, M. A., Demchenko, D. O., McNamara, J. D., Fernández-Garrido, S., Calarco, R.

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Correlation between the structural and optical properties of spontaneously formed GaN nanowires: a quantitative evaluation of the impact of nanowire coalescence von Fernández-Garrido, S, Kaganer, V M, Hauswald, C, Jenichen, B, Ramsteiner, M, Consonni, V, Geelhaar, L, Brandt, O

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Epitaxial Growth of GaN Nanowires with High Structural Perfection on a Metallic TiN Film von Wölz, M, Hauswald, C, Flissikowski, T, Gotschke, T, Fernández-Garrido, S, Brandt, O, Grahn, H. T, Geelhaar, L, Riechert, H

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Comprehensive analysis of the self-assembled formation of GaN nanowires on amorphous AlxOy: in situ quadrupole mass spectrometry studies von Sobanska, M, Zytkiewicz, Z R, Calabrese, G, Geelhaar, L, Fernández-Garrido, S

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Effect of surface roughness, chemical composition, and native oxide crystallinity on the orientation of self-assembled GaN nanowires on Ti foils von Calabrese, G, Pettersen, S V, Pfüller, C, Ramsteiner, M, Grepstad, J K, Brandt, O, Geelhaar, L, Fernández-Garrido, S

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Comprehensive analysis of the self-assembled formation of GaN nanowires on amorphous Al x O y : in situ quadrupole mass spectrometry studies von Sobanska, M, Zytkiewicz, Z R, Calabrese, G, Geelhaar, L, Fernández-Garrido, S

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Electron spin dynamics in mesoscopic GaN nanowires von Buß, J. H., Fernández-Garrido, S., Brandt, O., Hägele, D., Rudolph, J.

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Absence of Quantum-Confined Stark Effect in GaN Quantum Disks Embedded in (Al,Ga)N Nanowires Grown by Molecular Beam Epitaxy von Sinito, C, Corfdir, P, Pfüller, C, Gao, G, Bartolomé, J, Kölling, S, Rodil Doblado, A, Jahn, U, Lähnemann, J, Auzelle, T, Zettler, J. K, Flissikowski, T, Koenraad, P, Grahn, H. T, Geelhaar, L, Fernández-Garrido, S, Brandt, O

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Coalescence, crystallographic orientation and luminescence of ZnO nanowires grown on Si(001) by chemical vapour transport von Fernández-Garrido, S, Pisador, C, Lähnemann, J, Lazi, S, Ruiz, A, Redondo-Cubero, A

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Improved control over spontaneously formed GaN nanowires in molecular beam epitaxy using a two-step growth process von Zettler, J K, Corfdir, P, Geelhaar, L, Riechert, H, Brandt, O, Fernández-Garrido, S

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Interfacial reactions during the molecular beam epitaxy of GaN nanowires on Ti/Al2O3 von Calabrese, G, Gao, G, van Treeck, D, Corfdir, P, Sinito, C, Auzelle, T, Trampert, A, Geelhaar, L, Brandt, O, Fernández-Garrido, S

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Growth, morphology, and structural properties of group-III-nitride nanocolumns and nanodisks von Calleja, E., Ristić, J., Fernández-Garrido, S., Cerutti, L., Sánchez-García, M. A., Grandal, J., Trampert, A., Jahn, U., Sánchez, G., Griol, A., Sánchez, B.

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Growth of silicon- and carbon-doped GaAs by chemical beam epitaxy using H2-diluted DTBSi and CBr4 precursors von Ben Saddik, K., Braña, A.F., López, N., García, B.J., Fernández-Garrido, S.

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A growth diagram for plasma-assisted molecular beam epitaxy of GaN nanocolumns on Si(111) von Fernández-Garrido, S., Grandal, J., Calleja, E., Sánchez-García, M. A., López-Romero, D.

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In situ GaN decomposition analysis by quadrupole mass spectrometry and reflection high-energy electron diffraction von Fernández-Garrido, S., Koblmüller, G., Calleja, E., Speck, J. S.

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Self-assembled growth of GaN nanowires on amorphous AlxOy: from nucleation to the formation of dense nanowire ensembles von Sobanska, M, Fernández-Garrido, S, Zytkiewicz, Z R, Tchutchulashvili, G, Gieraltowska, S, Brandt, O, Geelhaar, L

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Stacking faults as quantum wells in nanowires: Density of states, oscillator strength, and radiative efficiency von Corfdir, P., Hauswald, C., Zettler, J. K., Flissikowski, T., Lähnemann, J., Fernández-Garrido, S., Geelhaar, L., Grahn, H. T., Brandt, O.

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