Silicon vapor phase epitaxial growth catalysis by the presence of germane von GARONE, P. M, STURM, J. C, SCHWARTZ, P. V, SCHWARZ, S. A, WILKENS, B. J

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Hole mobility enhancement in MOS-gated GexSi1-x/Si heterostructure inversion layers von GARONE, P. M, VENKATARAMAN, V, STURM, J. C

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Hole confinement in MOS-gated GexSi1-x/Si heterostructures von GARONE, P. M, VENKATARAMAN, V, STURM, J. C

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Silicon temperature measurement by infrared transmission for rapid thermal processing applications von STURM, J. C, SCHWARTZ, P. V, GARONE, P. M

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Temperature control of silicon-germanium alloy epitaxial growth on silicon substrates by infrared transmission von STURM, J. C, GARONE, P. M, SCHWARTZ, P. V

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A low cost and low power silicon npn bipolar process with NMOS transistors (ADRF) for RF and microwave applications von O, K., Garone, P., Tsai, C., Dawe, G., Scharf, B., Tewksbury, T., Kermarrec, C., Yasaitis, J.

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The effects of base dopant outdiffusion and undoped Si1-xGex junction spacer layers in Si/Si1-xGex/Si heterojunction bipolar transistors von PRINZ, E. J, GARONE, P. M, SCHWARTZ, P. V, XIAO, X, STURM, J. C

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Band-gap shifts in silicon-germanium heterojunction bipolar transistors von STURM, J. C, PRINZ, E. J, GARONE, P. M, SCHWARTZ, P. V

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In situ temperature measurement by infrared absorption for low-temperature epitaxial growth of homo- and hetero-epitaxial layers on silicon von STURM, J. C, SCHWARTZ, P. V, GARONE, P. M

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Developing a manufacturable process for the deposition of thick polysilicon films for micromachined devices von Nunan, K., Ready, G., Garone, P., Sturdy, G., Sledziewski, J.

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A low cost and low power silicon npn bipolar process with NMOS transistors and its wireless applications von O, K., Tewksbury, T., Dawe, G., Tsai, C., Garone, P., Scharf, B., Kermarrec, C., Yasaitis, J.

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A double-polysilicon self-aligned npn bipolar process (ADRF) with optional NMOS transistors for RF and microwave applications von O, K., Garone, P., Tsai, C., Scharf, B., Higgins, M., Mai, D., Kermarrec, C., Yasaitis, J.

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Hole mobility enhancement in MOS-gated Ge(x)Si(1-x)/Si heterostructure inversion layers von Garone, P M, Venkataraman, V, Sturm, J C

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Hole confinement MOS-gated Ge(x)Si(1-x)/Siheterostructures von Garone, P M, Venkataraman, V, Sturni, J C

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Hole confinement in MOS-gated Ge sub(x)Si sub(1-x)/Si heterostructures von Garone, P M, Venkataraman, V, Sturm, J C

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The effects of base dopant outdiffusion and undopedSi(1-x)Ge(x) junction spacer layers in Si/Si(1-x)Ge(x)/Si heterojunction bipolar transistors von Prinz, E J, Garone, P M, Schwartz, P V, Xiao, X, Sturm, J C

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The effects of base dopant outdiffusion and undoped Si sub(1-x)Ge sub(x) junction spacer layers in Si/Si sub(1-x)Ge sub(x)/Si heterojunction bipolar transistors von Prinz, E J, Garone, P M, Schwartz, P V, Xiao, X, Sturm, J C

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A double-spacer technology for the formation of very narrow emitter (0.3 /spl mu/m) double-polysilicon bipolar transistors using 0.8-/spl mu/m photolithography von Tsai, C., Scharf, B., Garone, P., Humphries, P., O, K.

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Life expectancies of South African adults starting antiretroviral treatment: collaborative analysis of cohort studies von Johnson, Leigh F, Mossong, Joel, Dorrington, Rob E, Schomaker, Michael, Hoffmann, Christopher J, Keiser, Olivia, Fox, Matthew P, Wood, Robin, Prozesky, Hans, Giddy, Janet, Garone, Daniela Belen, Cornell, Morna, Egger, Matthias, Boulle, Andrew

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What gaps remain in the HIV cascade of care? Results of a population-based survey in Nsanje District, Malawi von Conan, Nolwenn, Paye, Cyrus P, Ortuno, Reinaldo, Chijuwa, Alexander, Chiwandira, Brown, Goemaere, Eric, Belen Garone, Daniela, Coulborn, Rebecca M, Chihana, Menard, Maman, David

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