Ultra‐efficient intrinsic‐vertical‐tunnel‐junction structures for next‐generation concentrator solar cells von Seoane, Natalia, Fernández, Eduardo F., Almonacid, Florencia, García‐Loureiro, Antonio

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Numerical optimisation and recombination effects on the vertical-tunnel-junction (VTJ) GaAs solar cell up to 10,000 suns von Outes, Celia, Fernández, Eduardo F., Seoane, Natalia, Almonacid, Florencia, García-Loureiro, Antonio J.

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FinFET Versus Gate-All-Around Nanowire FET: Performance, Scaling, and Variability von Nagy, Daniel, Indalecio, Guillermo, Garcia-Loureiro, Antonio J., Elmessary, Muhammad A., Kalna, Karol, Seoane, Natalia

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Comparison of Fin-Edge Roughness and Metal Grain Work Function Variability in InGaAs and Si FinFETs von Seoane, Natalia, Indalecio, Guillermo, Aldegunde, Manuel, Nagy, Daniel, Elmessary, Muhammad A., Garcia-Loureiro, Antonio J., Kalna, Karol

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Parallel approach of Schrödinger-based quantum corrections for ultrascaled semiconductor devices von Espiñeira, Gabriel, García-Loureiro, Antonio J., Seoane, Natalia

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Ultra-High Concentration Vertical Homo-Multijunction Solar Cells for CubeSats and Terrestrial Applications von Abushattal, Ahmad A, Loureiro, Antonio García, Boukortt, Nour El I

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Anisotropic Quantum Corrections for 3-D Finite-Element Monte Carlo Simulations of Nanoscale Multigate Transistors von Elmessary, Muhammad A., Nagy, Daniel, Aldegunde, Manuel, Lindberg, Jari, Dettmer, Wulf G., Peric, Djordje, Garcia-Loureiro, Antonio J., Kalna, Karol

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Dependence of the vertical‐tunnel‐junction GaAs solar cell on concentration and temperature von Outes, Celia, Fernández, Eduardo F., Seoane, Natalia, Almonacid, Florencia, García‐Loureiro, Antonio J.

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Band-gap material selection for remote high-power laser transmission von Fernández, Eduardo F., García-Loureiro, Antonio, Seoane, Natalia, Almonacid, Florencia

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Wide-bandgap III-V materials for high efficiency air and underwater optical photovoltaic power transmission von Sanmartín, Pablo, Almonacid, Florencia, Ceballos, María A., García-Loureiro, Antonio, Fernández, Eduardo F.

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Drift-Diffusion Versus Monte Carlo Simulated ON-Current Variability in Nanowire FETs von Nagy, Daniel, Indalecio, Guillermo, Garcia-Loureiro, Antonio J., Espineira, Gabriel, Elmessary, Muhammad A., Kalna, Karol, Seoane, Natalia

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Special Issue: Nanowire Field-Effect Transistor (FET) von Seoane, Natalia, García-Loureiro, Antonio, Kalna, Karol

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Metal Grain Granularity Study on a Gate-All-Around Nanowire FET von Nagy, Daniel, Indalecio, Guillermo, Garcia-Loureiro, Antonio J., Elmessary, Muhammad A., Kalna, Karol, Seoane, Natalia

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A Multi-Method Simulation Toolbox to Study Performance and Variability of Nanowire FETs von Seoane, Natalia, Nagy, Daniel, Indalecio, Guillermo, Espiñeira, Gabriel, Kalna, Karol, García-Loureiro, Antonio

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A General Toolkit for Advanced Semiconductor Transistors: From Simulation to Machine Learning von Garcia-Loureiro, Antonio J., Seoane, Natalia, Fernandez, Julian G., Comesana, Enrique

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Upper Subcell Properties Effects on 2T-Perovskite/PERT C-Si Tandem Solar Cell Performance von Boukortt, Nour El I., Garcia Loureiro, Antonio, Abushattal, Ahmad

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Scaling/LER study of Si GAA nanowire FET using 3D finite element Monte Carlo simulations von Elmessary, Muhammad A., Nagy, Daniel, Aldegunde, Manuel, Seoane, Natalia, Indalecio, Guillermo, Lindberg, Jari, Dettmer, Wulf, Perić, Djordje, García-Loureiro, Antonio J., Kalna, Karol

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Modelling of nanoscale multi-gate transistors affected by atomistic interface roughness von Nagy, Daniel, Aldegunde, Manuel, Elmessary, Muhammad A, García-Loureiro, Antonio J, Seoane, Natalia, Kalna, Karol

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Laser Power Converter Architectures Based on 3C‐SiC with Efficiencies >80 von Lozano, Javier F., Seoane, Natalia, Comesaña, Enrique, Almonacid, Florencia, Fernández, Eduardo F., García-Loureiro, Antonio

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Improving performance of iterative solvers with the AXC format using the Intel Xeon Phi von Coronado-Barrientos, Edoardo, Indalecio, Guillermo, García-Loureiro, Antonio

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