Photoluminescence efficiency and absorption of aluminum-tris-quinolate (Alq 3) thin films von Garbuzov, D.Z., Bulović, V., Burrows, P.E., Forrest, S.R.

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2.3-2.7-μm room temperature CW operation of InGaAsSb-AlGaAsSb broad waveguide SCH-QW diode lasers von Garbuzov, D.Z., Lee, H., Khalfin, V., Martinelli, R., Connolly, J.C., Belenky, G.L.

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Reradiation effects, lifetimes and probabilities of band-to-band transitions in direct A3B5 compounds of GaAs type von Garbuzov, D.Z.

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InGaAsSb thermophotovoltaic diode: Physics evaluation von Charache, G. W., Baldasaro, P. F., Danielson, L. R., DePoy, D. M., Freeman, M. J., Wang, C. A., Choi, H. K., Garbuzov, D. Z., Martinelli, R. U., Khalfin, V., Saroop, S., Borrego, J. M., Gutmann, R. J.

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In situ laser measurements of CO and CH4 close to the surface of a burning single fuel particle von Lackner, M, Totschnig, G, Winter, F, Maiorov, M A, Garbuzov, D Z, Connolly, J C

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High-power high-efficiency 0.98-μm wavelength InGaAs-(In)GaAs(P)-InGaP broadened waveguide lasers grown by gas-source molecular beam epitaxy von GOKHALE, M. R, DRIES, J. C, STUDENKOV, P. V, FORREST, S. R, GARBUZOV, D. Z

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High-power 0.8 mu m InGaAsP-GaAs SCH SQW lasers von Garbuzov, D.Z., Antonishkis, N.Y., Bondarev, A.D., Gulakov, A.B., Zhigulin, S.N., Katsavets, N.I., Kochergin, A.V., Rafailov, E.V.

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High-power high-efficiency 0.98-/spl mu/m wavelength InGaAs-(In)GaAs(P)-InGaP broadened waveguide lasers grown by gas-source molecular beam epitaxy von Gokhale, M.R., Dries, J.C., Studenkov, P.V., Forrest, S.R., Garbuzov, D.Z.

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Reradiation effects, lifetimes and probabilities of band-to-band transitions in direct A 3B 5 compounds of GaAs type von Garbuzov, D.Z.

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Dark-line-resistant, aluminum-free diode laser at 0.8 mu m von Yellen, S.L., Shepard, A.H., Harding, C.M., Baumann, J.A., Waters, R.G., Garbuzov, D.Z., Pjataev, V., Kochergin, V., Zory, P.S.

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Low-threshold, high-power, 1.3-/spl mu/m wavelength, InGaAsP-InP etched-facet folded-cavity surface-emitting lasers von Chao, C.-P., Garbuzov, D.Z., Shiau, G.-J., Forrest, S.R., DiMarco, L.A., Harvey, M.G.

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Signal processing strategies in tunable diode laser spectrometers von Riris, Haris, Carlisle, Clinton B., Warren, Russell E., Cooper, David E., Martinelli, R.U., Menna, R.J., York, P.K., Garbuzov, D.Z., Lee, H., Abeles, J.H., Morris, N., Connolly, J.C., Narayan, S.Y.

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InGaP/InGaAsP/GaAs 0.808 /spl mu/m separate confinement laser diodes grown by metalorganic chemical vapor deposition von Diaz, J., Eliashevich, I., Mobarhan, K., Kolev, E., Wang, L.J., Garbuzov, D.Z., Razeghi, M.

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Low-threshold, high-power, 1.3-μm wavelength, InGaAsP-InP etched-facet folded-cavity surface-emitting lasers von Chao, C.-P., Garbuzov, D.Z., Shiau, G.-J., Forrest, S.R., DiMarco, L.A., Harvey, M.G.

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Low-loss, low-threshold 0.98 /spl mu/m wavelength InGaAsP/InGaP/GaAs broadened waveguide lasers grown by GSMBE von Gokhale, M.R., Dries, J.C., Studenkov, P., Garbuzov, D.Z., Forrest, S.R.

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On the peculiarities of the short-time (tg < 10 ms) solid solution LPE growth onto the moving substrate von Garbuzov, D.Z., Zhuravkevich, E.V., Zhmakin, A.I., Makarov, Yu.N., Ovchinnikov, A.V.

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InGaP/InGaAsP/GaAs 0.808 μm separate confinement laser diodes grown by metalorganic chemical vapor deposition von Diaz, J., Eliashevich, I., Mobarhan, K., Kolev, E., Wang, L.J., Garbuzov, D.Z., Razeghi, M.

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High-power 0. 8. mu. m InGaAsP-GaAs SCH SQW lasers von Garbuzov, D.Z., Antonishkis, N.Y., Bondarev, A.D., Gulakov, A.B., Zhigulin, S.N., Katsavets, N.I., Kochergin, A.V., Rafailov, E.V.

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Broadened-waveguide W quantum-well diode lasers operating at /spl lambda/=3.2 /spl mu/m von Lee, H., Menna, R.J., Martinelli, R.U., Garbuzov, D.Z., Connolly, J.C.

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2.2-2.5 /spl mu/m InGaAsSb/AlGaAsSb QW diode laser with extraordinarily wide (/spl Delta//spl lambda/ = 300 nm) optical gain spectrum von Donetsky, D.V., Westerfeld, D., Belenky, G.L., Martinelli, R.U., Garbuzov, D.Z., Maiorov, M., Connolly, J.C.

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