High-performance reverse blocking p-GaN HEMTs with recessed Schottky and p-GaN isolation blocks drain von Wang, Haiyong, Mao, Wei, Zhao, Shenglei, Gao, Beiluan, Du, Ming, Zheng, Xuefeng, Wang, Chong, Zhang, Chunfu, Zhang, Jincheng, Hao, Yue

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Enhanced composite gate transistor and manufacturing method thereof von YANG CUI, HAO YUE, MAO WEI, WANG HAIYONG, GAO BEILUAN

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Multi-stage petal-shaped body region metal oxide semiconductor power device and manufacturing method thereof von ZHANG JINCHENG, YANG CUI, HAO YUE, MA PEIJUN, DU MING, MAO WEI, WANG HAIYONG, ZHAO SHENGLEI, GAO BEILUAN, PEI CHEN

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Heterojunction power device and manufacturing method thereof von LIU XIAOYU, ZHANG JINCHENG, YANG CUI, HAO YUE, MA PEIJUN, DU MING, MAO WEI, WANG HAIYONG, ZHAO SHENGLEI, GAO BEILUAN

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Tunneling field effect device based on overlapping coupling plate and manufacturing method von ZHANG JINCHENG, HAO YUE, MA PEIJUN, HE YUANHAO, DU MING, MAO WEI, GAO BEILUAN

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Junction gate-drain power device von ZHANG JINCHENG, YANG CUI, HAO YUE, MA PEIJUN, WANG CHONG, MAO WEI, ZHANG JINFENG, ZHENG XUEFENG, MA XIAOHUA, GAO BEILUAN

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Power switching device and manufacturing method thereof von ZHANG JINCHENG, HE XIAONING, HAO YUE, MA PEIJUN, DU MING, MAO WEI, ZHAO SHENGLEI, ZHANG YACHAO, MA XIAOHUA, GAO BEILUAN

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Enhanced high electron mobility transistor and manufacturing method thereof von ZHANG JINCHENG, HAO YUE, MA PEIJUN, DU MING, MAO WEI, ZHOU HONG, ZHANG JINFENG, ZHANG CHUNFU, LIU ZHIHONG, GAO BEILUAN

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Multistage coupling gate tunneling field effect transistor and manufacturing method thereof von ZHANG JINCHENG, HAO YUE, MA PEIJUN, HE YUANHAO, DU MING, MAO WEI, PENG ZILING, GAO BEILUAN

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