Vision-Based Augmented Reality Visual Guidance with Keyframes von Gan, Timothy S. Y., Drummond, Tom W.

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Differentiating Between Many Similar Features using Relational Information in Space and Scale von Gan, T.S.Y., Drummond, T.W.

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Rhwymyn perffeithrwydd, neu frawdgarwch parhaus[; wedi cael ei drin yn feyddlon. Gweinidog yr efengyl yn aberduar, swydd guerfyrddin, awdwr y wisg wen, & c., & c., & c]. e argraffiad. Wedi ei gymeradwyo gan J. Harris, E. Morris, D. Peter von Thomas, Timothy, 1720-1768

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Barrier-Layer Optimization for Enhanced GaN-on-Diamond Device Cooling von Zhou, Yan, Anaya, Julian, Pomeroy, James, Sun, Huarui, Gu, Xing, Xie, Andy, Beam, Edward, Becker, Michael, Grotjohn, Timothy A, Lee, Cathy, Kuball, Martin

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W -Band GaN HEMT Frequency Multipliers von Sonnenberg, Timothy, Verploegh, Shane, Pinto, Mauricio, Popovic, Zoya

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Wafer-scale bonded GaN–AlN with high interface thermal conductance von Li, Man, Pan, Kaicheng, Ge, Yijun, Huynh, Kenny, Goorsky, Mark S., Fisher, Timothy S., Hu, Yongjie

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Dislocation Filtering in GaN Nanostructures von Colby, Robert, Liang, Zhiwen, Wildeson, Isaac H, Ewoldt, David A, Sands, Timothy D, García, R. Edwin, Stach, Eric A

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V- and W-Band Millimeter-Wave GaN MMICs von Sonnenberg, Timothy, Romano, Anthony, Verploegh, Shane, Pinto, Mauricio, Popovic, Zoya

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GaN-on-Silicon – Present capabilities and future directions von Boles, Timothy

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Effect of surface potential pinning on strain behavior of AlGaN/GaN device structures von Blanton, Eric W., Prusnick, Timothy A., Green, Andrew J., Glavin, Nicholas, Snure, Michael

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Transport properties of polarization-induced 2D electron gases in epitaxial AlScN/GaN heterojunctions von Casamento, Joseph, Nguyen, Thai-Son, Cho, Yongjin, Savant, Chandrashekhar, Vasen, Timothy, Afroz, Shamima, Hannan, Daniel, Xing, Huili (Grace), Jena, Debdeep

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Spalling induced van der Waals lift-off and transfer of 4-in. GaN epitaxial films von Snure, Michael, Blanton, Eric W., Soukhoveev, Vitali, Vogt, Timothy, Osinsky, Andrei, Prusnick, Timothy, Kennedy, W. Joshua, Glavin, Nicholas R.

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Improved crystallographic order of ScAlN/GaN heterostructures grown at low temperatures under metal rich surface conditions von Motoki, Keisuke, Engel, Zachary, McCrone, Timothy M., Chung, Huijin, Matthews, Christopher M., Lee, Sangho, Marshall, Emily N., Ghosh, Aheli, Tang, Amanda, Doolittle, W. Alan

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E-mode AlGaN/GaN HEMTs using p-NiO gates von Chiang, Chao-Ching, Wan, Hsiao-Hsuan, Li, Jian-Sian, Ren, Fan, Yoo, Timothy Jinsoo, Kim, Honggyu, Pearton, S. J.

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GaN resistive hydrogen gas sensors von Yun, Feng, Chevtchenko, Serguei, Moon, Yong-Tae, Morkoç, Hadis, Fawcett, Timothy J., Wolan, John T.

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Wafer‐scale epitaxial lift‐off of GaN using bandgap‐selective photoenhanced wet etching von Youtsey, Chris, McCarthy, Robert, Reddy, Rekha, Forghani, Kamran, Xie, Andy, Beam, Ed, Wang, Jingshan, Fay, Patrick, Ciarkowski, Timothy, Carlson, Eric, Guido, Louis

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Semi-GAN: An Improved GAN-Based Missing Data Imputation Method for the Semiconductor Industry von Lee, Sun-Yong, Connerton, Timothy Paul, Lee, Yeon-Woo, Kim, Daeyoung, Kim, Donghwan, Kim, Jin-Ho

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Thermal stability of band offsets of NiO/GaN von Xia, Xinyi, Li, Jian-Sian, Chiang, Chao-Ching, Yoo, Timothy Jinsoo, Ren, Fan, Kim, Honggyu, Pearton, S. J.

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E-Mode AlGaN/GaN HEMTs Using p-NiO Gates von Chiang, Chao-Ching, Wan, Hsiao-Hsuan, Li, Jian-Sian, Ren, Fan, Yoo, Timothy Jinsoo, Kim, Honggyu, Pearton, Stephen J

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Heavy ion irradiation effects on GaN/AlGaN high electron mobility transistor failure at off-state von Islam, Zahabul, Paoletta, Angela L., Monterrosa, Anthony M., Schuler, Jennifer D., Rupert, Timothy J., Hattar, Khalid, Glavin, Nicholas, Haque, Aman

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