Qualigilité : proposition pour la performance des petites et moyennes organisations von Houlgatte, C., Djou, I., Gamoudi, M., Bendimrad, M., Ben Achma, N., Wang, R., Farges, G., Derathé, A.

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Porous silicon as a potentiometric transducer for ion detection: effect of the porosity on the sensor response von Zairi, S., Martelet, C., Jaffrezic-Renault, N., Lamartine, R., M’gaı̈eth, R., Maaref, H., Gamoudi, M., Guillaud, G.

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Study of ion-selective evaporated calixarene film used as a sensitive layer on ISFET sensors von Mlika, R., Ben Ouada, H., Jaffrezic-Renault, N., Dumazet, I., Lamartine, R., Gamoudi, M., Guillaud, G.

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Enhancement of the ionic response of field effect transducers using porous silicon von Zairi, S, Martelet, C, Jaffrezic-Renault, N, Vocanson, F, Lamartine, R, M'ghaı̈eth, R, Maaref, H, Gamoudi, M

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Rutherford backscattering spectrometry investigations of chemical sensors for the detection of metals: application to calixarene and functionalized cottons von Davenas, J, Mlika, R, Baouab, H, Touhami, A, Gamoudi, M

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p-type porous-silicon transducer for cation detection : effect of the porosity, pore morphology, temperature and ion valency on the sensor response and generalisation of the Nernst... von ZAIRI, S, MARTELET, C, JAFFREZIC-RENAULT, N, VOCANSON, F, LAMARTINE, R, M'GAÏETH, R, MAAREF, H, GAMOUDI, M

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Transient behaviour of thin film transistors based on nickel phthalocyanine von Guillaud, G., Ben Chaabane, R., Jouve, C., Gamoudi, M.

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Calixarene membranes on semiconductor substrates for E.I.S. chemical sensors von Mlika, R., Ouada, H.Ben, Chaabane, R.Ben, Gamoudi, M., Guillaud, G., Jaffrezic-Renault, N., Lamartine, R.

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Structural and electronic properties of poly(meta/para phenylene) von Dridi, C, Haj. Said, A, Ouerghi, O, Chikhi, M, Legrand, A.P, Gamoudi, M, Davenas, J, Maâref, H

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Study of the electrical properties of thin film transistors based on nickel phthalocyanine von Ben Chaabane, R., Guillaud, G., Gamoudi, M.

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Synthesis and characterization of a conducting copolymer von Dridi, Ch, Chaieb, A., Hassen, F., Majdoub, M., Gamoudi, M.

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Elaboration of thin films based on p-tert-butyl-calix [8] arene. Application to the chemical sensors type EIS and ISFET von Mlika, R., Ouada, H. Ben, Hamza, M.A., Gamoudi, M., Guillaud, G., Jaffrezic-Renault, N.

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Membranes containing new large size calixarenes on semiconductor substrates for chemical microsensors von Mlika, R, Dumazet, I, Gamoudi, M, Lamartine, R, Ben Ouada, H, Jaffrezic-Renault, N, Guillaud, G

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Study of the membrane morphology and investigation of sensitivity to ions for sensors based on calixarenes von Chaabane, R.Ben, Gamoudi, M., Guillaud, G., Jouve, C., Lamartine, R., Bouazizi, A., Maaref, H.

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Ionic implantation at low energy: application to the shallow junction accomplishment and surface functionalization von Kaabi, L., Gontrand, C., Pinard, P., Balland, B., Remaki, B., Gamoudi, M., Guillaud, G.

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Investigation of the electrical properties of the metal-calixarene-semiconductor structures von Ben Chaabane, R., Gamoudi, M., Remaki, B., Guillaud, G., El Beqqali, O.

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Elaboration and characterization of thin calixarene films von Chaâbane, R.Ben, Gamoudi, M., Guillaud, G., Jouve, C., Gaillard, F., Lamartine, R.

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Pressure dependence of positron annihilation in InP von Soudini, B., Aourag, H., Amrane, N., Gamoudi, M., Khelifa, B.

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Positron Band Structures of GaAs and CdTe von Aourag, H., Khelifa, B., Belaidi, A., Tadjer, A., Rezki, M., Gamoudi, M.

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The correlation between charge densities and interstitial impurities in AlP and AlAs von Aourag, H., Belaidi, A., Khelifa, B., Gamoudi, M., Jardin, C.

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