Comparative Study of RESURF Si/SiC LDMOSFETs for High-Temperature Applications Using TCAD Modeling von Chan, C. W., Li, F., Sanchez, A., Mawby, P. A., Gammon, P. M.

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A Compact Trench-Assisted Space-Modulated JTE Design for High-Voltage 4H-SiC Devices von Dai, T., Zhang, L., Vavasour, O., Renz, A. B., Shah, V. A., Antoniou, M., Mawby, P. A., Gammon, P. M.

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Modelling the inhomogeneous SiC Schottky interface von Gammon, P. M., Pérez-Tomás, A., Shah, V. A., Vavasour, O., Donchev, E., Pang, J. S., Myronov, M., Fisher, C. A., Jennings, M. R., Leadley, D. R., Mawby, P. A.

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Optimization of 1700-V 4H-SiC Semi-Superjunction Schottky Rectifiers With Implanted P-Pillars for Practical Realization von Baker, G. W. C., Gammon, P. M., Renz, A. B., Vavasour, O., Chan, C. W., Qi, Y., Dai, T., Li, F., Zhang, L., Kotagama, V., Shah, V. A., Mawby, P. A., Antoniou, M.

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The improvement of Mo/4H-SiC Schottky diodes via a P2O5 surface passivation treatment von Renz, A. B., Shah, V. A., Vavasour, O. J., Bonyadi, Y., Li, F., Dai, T., Baker, G. W. C., Hindmarsh, S., Han, Y., Walker, M., Sharma, Y., Liu, Y., Raghothamachar, B., Dudley, M., Mawby, P. A., Gammon, P. M.

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Optimization of 1700-V 4H-SiC Superjunction Schottky Rectifiers With Implanted P-Pillars for Practical Realization von Baker, G. W. C., Chan, C., Renz, A. B., Qi, Y., Dai, T., Li, F., Shah, V. A., Mawby, P. A., Antoniou, M., Gammon, P. M.

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Gaussian distribution of inhomogeneous nickel-vanadium Schottky interface on silicon (100) von Soltani, S, Gammon, P M, Pérez-Tomas, A, Ferhat Hamida, A, Terchi, Y

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Long-term zinc contamination and transport at the abandoned Ore Chimney mine von Harper, C, Walsh, C, Fong, C, Gammon, P.R, Amos, R.T

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Initial investigations into the MOS interface of freestanding 3C-SiC layers for device applications von Renz, A B, Li, F, Vavasour, O J, Gammon, P M, Dai, T, Baker, G W C, Via, F La, Zielinski, M, Zhang, L, Grant, N E, Murphy, J D, Mawby, P A, Jennings, M, Shah, V A

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Modeling the effect of thin gate insulators (SiO2, SiN, Al2O3 and HfO2) on AlGaN/GaN HEMT forward characteristics grown on Si, sapphire and SiC von Pérez-Tomás, A., Fontserè, A., Jennings, M.R., Gammon, P.M.

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Gate traps inducing band-bending fluctuations on AlGaN/GaN heterojunction transistors von Pérez-Tomás, A., Fontserè, A., Sánchez, S., Jennings, M. R., Gammon, P. M., Cordier, Y.

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An organodiagenetic model for Marinoan-age cap carbonates von Gammon, P.R.

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Temperature dependence of Al/Ti-based Ohmic contact to GaN devices: HEMT and MOSFET von Fontserè, A., Pérez-Tomás, A., Placidi, M., Fernández-Martínez, P., Baron, N., Chenot, S., Cordier, Y., Moreno, J.C., Gammon, P.M., Jennings, M.R.

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Relationship between ecological indicators (Arcellacea), total mercury concentrations and grain size in lakes within the Athabasca oil sands region, Alberta von Neville, L. A, Patterson, R. T, Gammon, P, Macumber, A. L

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Nanoscale conductive pattern of the homoepitaxial AlGaN GaN transistor von Pérez-Tomás, A, Catalàn, G, Fontserè, A, Iglesias, V, Chen, H, Gammon, P M, Jennings, M R, Thomas, M, Fisher, C A, Sharma, Y K, Placidi, M, Chmielowska, M, Chenot, S, Porti, M, Nafría, M, Cordier, Y

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A study of temperature-related non-linearity at the metal-silicon interface von Gammon, P. M., Donchev, E., Pérez-Tomás, A., Shah, V. A., Pang, J. S., Petrov, P. K., Jennings, M. R., Fisher, C. A., Mawby, P. A., Leadley, D. R., McN. Alford, N.

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The paragenetic history of a Marinoan cap carbonate von Gammon, P.R., McKirdy, D.M., Smith, H.D.

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Sertraline in Children and Adolescents With Social Anxiety Disorder: An Open Trial von COMPTON, SCOTT N., GRANT, PAUL J., CHRISMAN, ALLAN K., GAMMON, PATRICIA JENEY, BROWN, VICKI L., MARCH, JOHN S.

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Nanoscale investigation of AlGaN/GaN-on-Si high electron mobility transistors von Fontserè, A, Pérez-Tomás, A, Placidi, M, Llobet, J, Baron, N, Chenot, S, Cordier, Y, Moreno, J C, Jennings, M R, Gammon, P M, Fisher, C A, Iglesias, V, Porti, M, Bayerl, A, Lanza, M, Nafría, M

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Modelling the metal-semiconductor band structure in implanted ohmic contacts to GaN and SiC von Pérez-Tomás, A, Fontserè, A, Placidi, M, Jennings, M R, Gammon, P M

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