Silicides and ohmic contacts von Gambino, J.P., Colgan, E.G.

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Determination of the Fowler–Nordheim tunneling parameters from the Fowler–Nordheim plot von Chiou, Y.L., Gambino, J.P., Mohammad, M.

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Formation and stability of silicides on polycrystalline silicon von Colgan, E.G., Gambino, J.P., Hong, Q.Z.

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The thermal stability of CoSi2 on polycrystalline silicon : The effect of silicon grain size and metal thickness von GAMBINO, J. P, COLGAN, E. G, DOMENICUCCI, A. G, CUNNINGHAM, B

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DIFFUSION BARRIER PROPERTIES OF TIN FILMS FOR SUBMICRON SILICON BIPOLAR TECHNOLOGIES von KOBEDA, E, WARNOCK, JD, GAMBINO, JP, BRODSKY, SB, CUNNINGHAM, B, BASAVAIAH, S

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Grain boundary electronic states in some simple ZnO varistors von GAMBINO, J. P, KINGERY, W. D, PIKE, G. E, PHILIPP, H. R, LEVINSON, L. M

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Process Challenges for Integration of Copper Interconnects with Low-k Dielectrics von Gambino, Jeff

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Junction leakage due to CoSi2 formation on As-doped polysilicon von GAMBINO, J. P, CUNNINGHAM, B

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Characterization of encroachment of selective chemical vapor deposition of tungsten at the edge of contacts von COLGAN, E. G, GAMBINO, J. P, KASTL, R. H

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Nickel silicide thermal stability on polycrystalline and single crystalline silicon von Colgan, E.G., Gambino, J.P., Cunningham, B.

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Deep level transient spectroscopy of metal-oxide-semiconductor capacitors fabricated on CF4 reactive-ion-etched Si von VUILLAUME, D, LAKHDARI, H, GAMBINO, J. P

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Fabrication of tungsten local interconnect for VLSI bipolar technology von KOBEDA, E, MAZZEO, N. J, GAMBINO, J. P, NG, H, PATTON, G. L, WARNOCK, J. D, BASAVAIAH, S, WHITE, J. F, CRESSLER, J. D

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Liquid junctions for characterization of electronic materials. III: Modulation spectroscopies of reactive ion etching of Si von WU-MIAN SHEN, FANTINI, M. C. A, POLLAK, F. H, TOMKIEWICZ, M, LEARY, H. J, GAMBINO, J. P

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Junction Leakage due to RIE‐Induced Metallic Contamination von Gambino, J. P., Monkowski, M. D., Shepard, J. F., Parks, C. C.

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Dielectric degradation mechanism for copper interconnects capped with CoWP von Tan, T. L., Gan, C. L., Du, A. Y., Cheng, C. K., Gambino, J. P.

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Improved Frequency Response in a SiGe npn Device through Improved Dopant Activation von Adkisson, James, Khater, Marwan, Gambino, Jeff, Cheng, Peng, Jain, Vibhor, Camillo-Castillo, Renata, Lavoie, Christian, Sutton, Akil, Gluschenkov, Oleg, Liu, Q.Z., McDevitt, Tom, Engelmann, Sebastian, Pekarik, Jack, Harame, D. L.

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Dielectric degradation mechanism for copper interconnects cappedwith CoWP von Tan, T. L., Gan, C. L., Du, A. Y., Cheng, C. K., Gambino, J. P.

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PtSi-induced junction leakage von GAMBINO, J. P, MONKOWSKI, M. D, TSANG, P. J, SHEPARD, J. F, RANSOM, C. M, WONG, C. Y

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Reaction of Ti with WSi2 von Gambino, J. P., Cunningham, B., DeHaven, P., Adams, E. D.

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Effect of Heat Treatments on the Wetting Behavior of Bismuth-Rich Intergranular Phases in ZnO:Bi:Co Varistors von Gambino, Jeffrey P., Kingery, W. David, Pike, Gordon E., Levinson, Lionel M., Philipp, Herbert R.

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