Primary Pulmonary Botryomycosis von Speir, William A., Mitchener, James W., Galloway, Ronald F.

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Mechanical Assistance for Cardiogenic Shock Following Cardiac Surgery, Myocardial Infarction, and Cardiac Transplantation von Zumbro, G. Lionel, Kitchens, William R., Shearer, George, Harville, Gail, Bailey, Louise, Galloway, Ronald F.

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A Prospective Evaluation of the Pulsatile Assist Device von Zumbro, G. Lionel, Shearer, George, Fishback, Malcolm E., Galloway, Ronald F.

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Strut fracture in De Bakey valve von Zumbro, G. Lionel, Cundey, Paul E., Fishback, Malcolm E., Galloway, Ronald F.

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AN EVALUATION OF THE METHODS AND MATERIALS USED IN RECORDING INTRACARDIAC AND INTRA-ARTERIAL BLOOD PRESSURES von Galloway, Ronald F., Hall, David P., Ellison, Robert G.

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Single-Event Burnout Mechanisms in SiC Power MOSFETs von Witulski, Arthur F., Ball, Dennis R., Galloway, Kenneth F., Javanainen, Arto, Lauenstein, Jean-Marie, Sternberg, Andrew L., Schrimpf, Ronald D.

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Extracorporeal Membrane Oxygenation Support in Severe COVID-19 von Kon, Zachary N., Smith, Deane E., Chang, Stephanie H., Goldenberg, Ronald M., Angel, Luis F., Carillo, Julius A., Geraci, Travis C., Cerfolio, Robert J., Montgomery, Robert A., Moazami, Nader, Galloway, Aubrey C.

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Heavy-Ion-Induced Degradation in SiC Schottky Diodes: Incident Angle and Energy Deposition Dependence von Javanainen, Arto, Turowski, Marek, Galloway, Kenneth F., Nicklaw, Christopher, Ferlet-Cavrois, Veronique, Bosser, Alexandre, Lauenstein, Jean-Marie, Muschitiello, Michele, Pintacuda, Francesco, Reed, Robert A., Schrimpf, Ronald D., Weller, Robert A., Virtanen, A.

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Influence of Radiation Environment Variability on Cumulative Heavy-Ion-Induced Leakage Current in SiC Power Devices von Johnson, R. A., Witulski, A. F., Sierawski, B. D., Ball, D. R., Galloway, K. F., Sternberg, A. L., Reed, R. A., Schrimpf, R. D., Alles, M. L., Lauenstein, J. M., Hutson, J.M.

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Single-Event Effects in Heavy-Ion Irradiated 3-kV SiC Charge-Balanced Power Devices von Sengupta, Arijit, Ball, Dennis R., Islam, Sajal, Senarath, Aditha S., Sternberg, Andrew L., Zhang, En Xia, Alles, Michael L., Osheroff, Jason M., Ghandi, Reza, Jacob, Biju, Goswami, Shubhodeep, Hitchcock, Collin W., Hutson, John M., Reed, Robert A., Galloway, Kenneth F., Schrimpf, Ronald D., Witulski, Arthur F.

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Analysis of Heavy-Ion-Induced Leakage Current in SiC Power Devices von Johnson, Robert A., Witulski, Arthur F., Ball, Dennis R., Galloway, Kenneth F., Sternberg, Andrew L., Reed, Robert A., Schrimpf, Ronald D., Alles, Michael L., Lauenstein, Jean-Marie, Hutson, John M.

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Impact of Heavy-Ion Range on Single-Event Effects in Silicon Carbide Power Junction Barrier Schottky Diodes von Sengupta, Arijit, Ball, Dennis R., Witulski, Arthur F., Zhang, En Xia, Schrimpf, Ronald D., Galloway, Kenneth F., Reed, Robert A., Alles, Michael L., McCurdy, Michael W., Sternberg, Andrew L., Johnson III, Robert A., Howell, Mick E., Osheroff, Jason M., Hutson, John M.

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Heavy Ion Induced Degradation in SiC Schottky Diodes: Bias and Energy Deposition Dependence von Javanainen, Arto, Galloway, Kenneth F., Nicklaw, Christopher, Bosser, Alexandre L., Ferlet-Cavrois, Veronique, Lauenstein, Jean-Marie, Pintacuda, Francesco, Reed, Robert A., Schrimpf, Ronald D., Weller, Robert A., Virtanen, Ari

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LET and Voltage Dependence of Single-Event Burnout and Single-Event Leakage Current in High-Voltage SiC Power Devices von Sengupta, Arijit, Ball, Dennis R., Sternberg, Andrew L., Islam, Sajal, Senarath, Aditha S., Reed, Robert A., McCurdy, Michael W., Zhang, En Xia, Hutson, John M., Alles, Michael L., Osheroff, Jason M., Jacob, Biju, Hitchcock, Collin W., Goswami, Shubhodeep, Schrimpf, Ronald D., Galloway, Kenneth F., Witulski, Arthur F.

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Enhanced Charge Collection in SiC Power MOSFETs Demonstrated by Pulse-Laser Two-Photon Absorption SEE Experiments von Johnson, Robert A., Witulski, Arthur F., Ball, Dennis R., Galloway, Kenneth F., Sternberg, Andrew L., Zhang, Enxia, Ryder, Landen D., Reed, Robert A., Schrimpf, Ronald D., Kozub, John A., Lauenstein, Jean-Marie, Javanainen, Arto

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Unifying Concepts for Ion-Induced Leakage Current Degradation in Silicon Carbide Schottky Power Diodes von Johnson, Robert A., Javanainen, Arto, Raman, Ashok, Chakraborty, Partha S., Arslanbekov, Robert R., Witulski, Arthur F., Ball, Dennis R., Galloway, Kenneth F., Sternberg, Andrew L., Reed, Robert A., Schrimpf, Ronald D., Alles, Micheal L., Lauenstein, Jean-Marie

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Inclusion of Radiation Environment Variability for Reliability Estimates for SiC Power MOSFETs von Austin, Rebekah A., Sierawski, Brian D., Reed, Robert A., Schrimpf, Ronald D., Galloway, Kenneth F., Ball, Dennis R., Witulski, Arthur F.

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Displacement Damage in Bipolar Junction Transistors: Beyond Messenger-Spratt von Barnaby, H. J., Schrimpf, R. D., Galloway, K. F., Li, X., Yang, J., Liu, C.

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Failure Estimates for SiC Power MOSFETs in Space Electronics von Galloway, Kenneth F., Witulski, Arthur F., Schrimpf, Ronald D., Sternberg, Andrew L., Ball, Dennis R., Javanainen, Arto, Reed, Robert A., Sierawski, Brian D., Lauenstein, Jean-Marie

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Dependence of Ideality Factor in Lateral PNP Transistors on Surface Carrier Concentration von Xingji Li, Jianqun Yang, Barnaby, Hugh J., Galloway, Kenneth F., Schrimpf, Ronald D., Fleetwood, Daniel M., Chaoming Liu

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