Trap-assisted tunneling in InGaN/GaN single-quantum-well light-emitting diodes von Auf der Maur, M., Galler, B., Pietzonka, I., Strassburg, M., Lugauer, H., Di Carlo, A.

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Role of defects in the thermal droop of InGaN-based light emitting diodes von De Santi, C., Meneghini, M., La Grassa, M., Galler, B., Zeisel, R., Goano, M., Dominici, S., Mandurrino, M., Bertazzi, F., Robidas, D., Meneghesso, G., Zanoni, E.

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Influence of indium content and temperature on Auger-like recombination in InGaN quantum wells grown on (111) silicon substrates von Galler, B., Drechsel, P., Monnard, R., Rode, P., Stauss, P., Froehlich, S., Bergbauer, W., Binder, M., Sabathil, M., Hahn, B., Wagner, J.

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Characterization of the deep levels responsible for non-radiative recombination in InGaN/GaN light-emitting diodes von Meneghini, M., la Grassa, M., Vaccari, S., Galler, B., Zeisel, R., Drechsel, P., Hahn, B., Meneghesso, G., Zanoni, E.

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Identification of nnp and npp Auger recombination as significant contributor to the efficiency droop in (GaIn)N quantum wells by visualization of hot carriers in photoluminescence von Binder, M., Nirschl, A., Zeisel, R., Hager, T., Lugauer, H.-J., Sabathil, M., Bougeard, D., Wagner, J., Galler, B.

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On Choosing Phosphors for Near-UV and Blue LEDs for White Light von Piquette, A., Bergbauer, W., Galler, B., Mishra, K. C.

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Investigations on correlation between I–V characteristic and internal quantum efficiency of blue (AlGaIn)N light-emitting diodes von Binder, M, Galler, B, Furitsch, M, Off, J, Wagner, J, Zeisel, R, Katz, S

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Morphology, growth mode and indium incorporation of MOVPE grown InGaN and AlInGaN: A comparison von Ahl, J.-P., Hertkorn, J., Koch, H., Galler, B., Michel, B., Binder, M., Holländer, B.

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Carrier transport in green AlInGaN based structures on c-plane substrates von Hager, T., Binder, M., Brüderl, G., Eichler, C., Avramescu, A., Wurm, T., Gomez-Iglesias, A., Stojetz, B., Tautz, S., Galler, B., Gerhard, S., Zeisel, R., Strauss, U.

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High mobility hydrogenated zinc oxide thin films von Gaspar, D., Pereira, L., Gehrke, K., Galler, B., Fortunato, E., Martins, R.

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Investigation of the carrier distribution in InGaN-based multi-quantum-well structures von Galler, B., Laubsch, A., Wojcik, A., Lugauer, H., Gomez-Iglesias, A., Sabathil, M., Hahn, B.

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A mysterious central retinal vein occlusion von Galler, B

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Ein rätselhafter Zentralvenenverschluss von Galler, B.

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Green high-power light sources using InGaN multi-quantum-well structures for full conversion von Galler, B., Sabathil, M., Laubsch, A., Meyer, T., Hoeppel, L., Kraeuter, G., Lugauer, H., Strassburg, M., Peter, M., Biebersdorf, A., Steegmueller, U., Hahn, B.

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Increased Spreading, Rac/p21-activated Kinase (PAK) Activity, and Compromised Cell Motility in Cells Deficient in Vasodilator-stimulated Phosphoprotein (VASP) von Garcı́a Arguinzonis, Maı́sa I., Galler, Annette B., Walter, Ulrich, Reinhard, Matthias, Simm, Andreas

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VASP-dependent regulation of actin cytoskeleton rigidity, cell adhesion, and detachment von Galler, Annette B, García Arguinzonis, Maísa I, Baumgartner, Werner, Kuhn, Monika, Smolenski, Albert, Simm, Andreas, Reinhard, Matthias

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Monolitically grown dual wavelength InGaN LEDs for improved CRI von Stauss, P., Mandl, M., Rode, P., Laubsch, A., Biebersdorf, A., Windisch, R., Galler, B., Drechsel, P., Steegmüller, U.

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Ageing of InGaN-based LEDs: Effects on internal quantum efficiency and role of defects von La Grassa, M., Meneghini, M., De Santi, C., Mandurrino, M., Goano, M., Bertazzi, F., Zeisel, R., Galler, B., Meneghesso, G., Zanoni, E.

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Transport and capture properties of Auger-generated high-energy carriers in (AlInGa)N quantum well structures von Nirschl, A., Binder, M., Schmid, M., Karow, M. M., Pietzonka, I., Lugauer, H.-J., Zeisel, R., Sabathil, M., Bougeard, D., Galler, B.

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Differences in usability of rabbit IgG and chicken IgY after clean-up and impact on gold labelling properties von Rudolf, Judith, Führer, Manuela, Galler, Brigitte, Ansari, Parisa, Hasenhindl, Christoph, Baumgartner, Sabine

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