Tetragonal phase of epitaxial room-temperature antiferromagnet CuMnAs von Wadley, P., Novák, V., Campion, R.P., Rinaldi, C., Martí, X., Reichlová, H., Železný, J., Gazquez, J., Roldan, M.A., Varela, M., Khalyavin, D., Langridge, S., Kriegner, D., Máca, F., Mašek, J., Bertacco, R., Holý, V., Rushforth, A.W., Edmonds, K.W., Gallagher, B.L., Foxon, C.T., Wunderlich, J., Jungwirth, T.

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The essential role of carefully optimized synthesis for elucidating intrinsic material properties of (Ga,Mn)As von Nĕmec, P., Novák, V., Tesařová, N., Rozkotová, E., Reichlová, H., Butkovičová, D., Trojánek, F., Olejník, K., Malý, P., Campion, R.P., Gallagher, B.L., Sinova, Jairo, Jungwirth, T.

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Prospects for high temperature ferromagnetism in (Ga,Mn)As semiconductors von JUNGWIRTH, T, WANG, K. Y, RUSHFORTH, A. W, CAMPION, R. P, ZHAO, L. X, FOXON, C. T, GALLAGHER, B. L, MASEK, J, EDMONDS, K. W, KÖNIG, Jurgen, SINOVA, Jairo, POLINI, M, GONCHARUK, N. A, MACDONALD, A. H, SAWICKI, M

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Mn interstitial diffusion in (ga,mn)as von Edmonds, K W, Bogusławski, P, Wang, K Y, Campion, R P, Novikov, S N, Farley, N R S, Gallagher, B L, Foxon, C T, Sawicki, M, Dietl, T, Buongiorno Nardelli, M, Bernholc, J

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High-Curie-temperature Ga1−xMnxAs obtained by resistance-monitored annealing von Edmonds, K. W., Wang, K. Y., Campion, R. P., Neumann, A. C., Farley, N. R. S., Gallagher, B. L., Foxon, C. T.

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Spin reorientation transition in single-domain (Ga, Mn)As von WANG, K.-Y, SAWICKI, M, EDMONDS, K. W, CAMPION, R. P, MAAT, S, FOXON, C. T, GALLAGHER, B. L, DIETL, T

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In-plane uniaxial anisotropy rotations in (Ga,Mn)As thin films von SAWICKI, M, WANG, K.-Y, DIETL, T, GALLAGHER, B. L, EDMONDS, K. W, CAMPION, R. P, STADDON, C. R, FARLEY, N. R. S, FOXON, C. T, PAPIS, E, KAMINSKA, E, PIOTROWSKA, A

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Anisotropic magnetoresistance and magnetic anisotropy in high-quality (Ga,Mn)As films von WANG, K. Y, EDMONDS, K. W, CAMPION, R. P, ZHAO, L. X, FOXON, C. T, GALLAGHER, B. L

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Identification of the interstitial Mn site in ferromagnetic (Ga,Mn)As von Lima, T. A. L., Wahl, U., Augustyns, V., Silva, D. J., Costa, A., Houben, K., Edmonds, K. W., Gallagher, B. L., Campion, R. P., Van Bael, M. J., da Silva, M. R., Correia, J. G., Araújo, J. P., Temst, K., Vantomme, A., Pereira, L. M. C.

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Large tunneling anisotropic magnetoresistance in (Ga, Mn)As nanoconstrictions von GIDDINGS, A. D, KHALID, M. N, WILLIAMS, D, GALLAGHER, B. L, FOXON, C. T, JUNGWIRTH, T, WUNDERLICH, J, YASIN, S, CAMPION, R. P, EDMONDS, K. W, SINOVA, J, ITO, K, WANG, K.-Y

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Hall effect and hole densities in Ga1−xMnxAs von Edmonds, K. W., Wang, K. Y., Campion, R. P., Neumann, A. C., Foxon, C. T., Gallagher, B. L., Main, P. C.

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Dc-transport properties of ferromagnetic (Ga,Mn)As semiconductors von Jungwirth, T., Sinova, Jairo, Wang, K. Y., Edmonds, K. W., Campion, R. P., Gallagher, B. L., Foxon, C. T., Niu, Qian, MacDonald, A. H.

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Magnetoresistance of a two-dimensional electron gas due to a single magnetic barrier and its use for nanomagnetometry von Kubrak, V., Rahman, F., Gallagher, B. L., Main, P. C., Henini, M., Marrows, C. H., Howson, M. A.

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Control of coercivities in (Ga,Mn)As thin films by small concentrations of MnAs nanoclusters von Wang, K. Y., Sawicki, M., Edmonds, K. W., Campion, R. P., Rushforth, A. W., Freeman, A. A., Foxon, C. T., Gallagher, B. L., Dietl, T.

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Influence of the Mn interstitial on the magnetic and transport properties of (Ga,Mn)As von Wang, K. Y., Edmonds, K. W., Campion, R. P., Gallagher, B. L., Farley, N. R. S., Foxon, C. T., Sawicki, M., Boguslawski, P., Dietl, T.

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High-quality GaMnAs films grown with arsenic dimers von Campion, R.P, Edmonds, K.W, Zhao, L.X, Wang, K.Y, Foxon, C.T, Gallagher, B.L, Staddon, C.R

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Low-temperature magnetization of (Ga,Mn)As semiconductors von Jungwirth, T., Mašek, J., Wang, K. Y., Edmonds, K. W., Sawicki, M., Polini, M., Sinova, Jairo, MacDonald, A. H., Campion, R. P., Zhao, L. X., Farley, N. R. S., Johal, T. K., van der Laan, G., Foxon, C. T., Gallagher, B. L.

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Angle-dependent x-ray magnetic circular dichroism from (Ga,Mn)As: anisotropy and identification of hybridized states von Edmonds, K W, van der Laan, G, Freeman, A A, Farley, N R S, Johal, T K, Campion, R P, Foxon, C T, Gallagher, B L, Arenholz, E

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Intrinsic and extrinsic contributions to the lattice parameter of GaMnAs von Zhao, L. X., Staddon, C. R., Wang, K. Y., Edmonds, K. W., Campion, R. P., Gallagher, B. L., Foxon, C. T.

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Magnetoresistance and Hall effect in the ferromagnetic semiconductor Ga1−xMnxAs von Edmonds, K. W., Campion, R. P., Wang, K. -Y., Neumann, A. C., Gallagher, B. L., Foxon, C. T., Main, P. C.

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