Electronic energy structure of the (100) In4Se3 surfaces at different preparation and treatment in ultraviolet photoelectron spectroscopy study von Tuziak, O.Ya, Makar, T.R., Dzyuba, V.I., Nenchuk, T.M., Galiy, P.V.

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Scanning tunneling spectroscopy of In4Se3 layered semiconductor crystals von GALIY, P.V., NENCHUK, T.M., DVERIY, O.R., CISZEWSKI, A., MAZUR, P., ZUBER, S., BUZHUK, Ya.M.

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Solid state dewetting application for In/ (0001) Sb2Te3 2D layered semiconductor nanosystem formation von Galiy, P.V., Nenchuk, T.M., Ciszewski, A., Mazur, P., Dzyuba, V.I., Makar, T.R., Tsvetkova, O.V.

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Self-assembled indium nanostructures formation on InSe (0001) surface von Galiy, P. V., Nenchuk, T. M., Ciszewski, A., Mazur, P., Buzhuk, Ya. M., Tsvetkova, O. V.

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28aAS-7 擬1次元半導体In_4Se_3の高分解能ARPES(28aAS 光電子分光(放射光,強相関電子系,超高速現象),領域5(光物性)) von 福谷, 圭祐, 宮田, 康成, 家城, 英, 松崎, 出愛, 佐藤, 宇史, 高橋, 隆

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Indium induced nanostructures on In4Se3(100) surface studied by scanning tunneling microscopy von Galiy, P.V.

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The interface microscopy and spectroscopy on the cleavage surfaces of the In4Se3 pure and copper-intercalated layered crystals von GALIY, P. V, MUSYANOVYCH, A. V, FIYALA, Ya. M

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Low-Energy-Electron-Diffraction Structural Studies of (100) Cleavage Surfaces of In4Se3 Layered Crystals von Galiy, P.V., Losovyj, Ya.B., Nenchuk, T.M., Yarovets’, I.R.

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Atomic force microscopy study of the cleavage surfaces of In4Se3 layered semiconductor crystal von GALIY, P. V, NENCHUK, T. M, DVERIY, O. R, CISZEWSKI, A, MAZUR, P, ZUBER, S

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The interface microscopy and spectroscopy on the cleavage surfaces of the In 4Se 3 pure and copper-intercalated layered crystals von Galiy, P.V., Musyanovych, A.V., Fiyala, Ya.M.

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Atomic force microscopy study of the cleavage surfaces of In 4Se 3 layered semiconductor crystal von Galiy, P.V., Nenchuk, T.M., Dveriy, O.R., Ciszewski, A., Mazur, P., Zuber, S.

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Electron spectroscopy of the interface carbon layer formation on the cleavage surfaces of the layered semiconductor In 4Se 3 crystals von Galiy, P.V., Musyanovych, A.V., Nenchuk, T.M.

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Excitonic ionizations of the electron centres in caesium iodide crystal and exoemission of electrons von Galiy, P.V., Mel’nyk, O.Ya, Tsvetkova, O.V.

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Electron spectroscopy of the interface carbon layer formation on the cleavage surfaces of the layered semiconductor In4Se3 crystals von Galiy, P V, Musyanovych, A V, Nenchuk, T M

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28aAS-7 High-Resolution ARPES study of Quasi-One-Dimensional Semiconductor In_4Se_3 von Fukutani, K., Miyata, Y., Ieki, E., Matsuzaki, I., Galiy, P.V., Dowben, P.A., Sato, T., Takahashi, T.

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The radiation defect accumulation in scintillative crystals of caesium halides under intense electron beam irradiation von Galiy, P.V.

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Surface investigations of nanostructured porous silicon von Galiy, P.V, Lesiv, T.I, Monastyrskii, L.S, Nenchuk, T.M, Olenych, I.B

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Auger electron spectroscopy studies of In4Se3 layered crystals von Galiy, P.V., Nenchuk, T.M., Stakhira, J.M., Fiyala, Ya.M.

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Auger electron spectroscopy studies of In 4Se 3 layered crystals von Galiy, P.V., Nenchuk, T.M., Stakhira, J.M., Fiyala, Ya.M.

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Thermostimulated Exoelectron Emission Studies of Porous Silicon von Galiy, P. V., Nenchuk, T. M., Stakhira, J. M.

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