The interface microscopy and spectroscopy on the cleavage surfaces of the In4Se3 pure and copper-intercalated layered crystals von GALIY, P. V, MUSYANOVYCH, A. V, FIYALA, Ya. M

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Atomic force microscopy study of the cleavage surfaces of In4Se3 layered semiconductor crystal von GALIY, P. V, NENCHUK, T. M, DVERIY, O. R, CISZEWSKI, A, MAZUR, P, ZUBER, S

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The radiation defect accumulation in scintillative crystals of caesium halides under intense electron beam irradiation von Galiy, P.V.

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Electronic energy structure of the (100) In4Se3 surfaces at different preparation and treatment in ultraviolet photoelectron spectroscopy study von Tuziak, O.Ya, Makar, T.R., Dzyuba, V.I., Nenchuk, T.M., Galiy, P.V.

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Solid state dewetting application for In/ (0001) Sb2Te3 2D layered semiconductor nanosystem formation von Galiy, P.V., Nenchuk, T.M., Ciszewski, A., Mazur, P., Dzyuba, V.I., Makar, T.R., Tsvetkova, O.V.

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Self-assembled indium nanostructures formation on InSe (0001) surface von Galiy, P. V., Nenchuk, T. M., Ciszewski, A., Mazur, P., Buzhuk, Ya. M., Tsvetkova, O. V.

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Thermostimulated Exoelectron Emission Studies of Porous Silicon von Galiy, P. V., Nenchuk, T. M., Stakhira, J. M.

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Excitonic ionizations of the electron centres in caesium iodide crystal and exoemission of electrons von Galiy, P.V., Mel’nyk, O.Ya, Tsvetkova, O.V.

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Electron spectroscopy of the interface carbon layer formation on the cleavage surfaces of the layered semiconductor In4Se3 crystals von Galiy, P V, Musyanovych, A V, Nenchuk, T M

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Structural Aspect of Formation of a Nanosystem of In/In$_{4}$Se$_{3}$ (100) von Galiy, P. V., Mazur, P., Ciszewski, A., Nenchuk, T. M., Yarovets’, I. R., Dveriy, O. R.

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Indium Deposited Nanosystem Formation on InSe (0001) Surface Applied as Template von Galiy, P. V., Nenchuk, T. M., Ciszewski, A., Mazur, P., Buzhuk, Ya. M., Lubun, Z. M., Dveriy, O. R.

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Ni$_x$InSe (0001) Metal–Semiconductor Heteronanosystem Study von Galiy, P. V., Nenchuk, T. M., Ciszewski, A., Mazur, P., Yarovets’, I. R., Dveriy, O. R.

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7aAS-6 In_4Se_3表面上の2DEG状態の高分解能ARPES(7aAS 表面界面電子物性,領域9(表面・界面,結晶成長)) von 福谷, 圭祐, 宮田, 康成, 家城, 英, 松崎, 出愛, 佐藤, 宇史, 高橋, 隆

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Tunable two-dimensional electron gas at the surface of thermoelectric material In sub(4)Se sub(3) von Fukutani, K, Sato, T, Galiy, P V, Sugawara, K, Takahashi, T

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Tunable two-dimensional electron gas at the surface of thermoelectric material In 4 Se 3 von Fukutani, K., Sato, T., Galiy, P. V., Sugawara, K., Takahashi, T.

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Surface investigations of nanostructured porous silicon von Galiy, P.V, Lesiv, T.I, Monastyrskii, L.S, Nenchuk, T.M, Olenych, I.B

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Auger electron spectroscopy studies of In4Se3 layered crystals von Galiy, P.V., Nenchuk, T.M., Stakhira, J.M., Fiyala, Ya.M.

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Low-Energy-Electron-Diffraction Structural Studies of (100) Cleavage Surfaces of In4Se3 Layered Crystals von Galiy, P.V., Losovyj, Ya.B., Nenchuk, T.M., Yarovets’, I.R.

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Electron spectroscopy of the interface carbon layer formation on the cleavage surfaces of the layered semiconductor In 4Se 3 crystals von Galiy, P.V., Musyanovych, A.V., Nenchuk, T.M.

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7aAS-6 Direct observation of two-dimensional electron gas at the surface of In_4Se_3 by high-resolution angle-resolved photoemission spectroscopy von Fukutani, K., Miyata, Y., Ieki, E., Matsuzaki, I., Galiy, P. V., Dowben, P. A., Sato, T., Takahashi, T.

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