TCAD Simulation of Single Event Effects on Electronic Devices von Buhler, R. T., Novo, C., Perin, A. L., Galeti, M., Pereira, C. F., Guazzelli, M. A., Giacomini, R. C.

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Innovative approach for electrical characterisation of pseudo-resistors von Benko, P.L, Galeti, M, Pereira, C.F, Lucchi, J.C, Giacomini, R

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Influence of the sidewall crystal orientation, HfSiO nitridation and TiN metal gate thickness on n-MuGFETs under analog operation von Rodrigues, M., Galeti, M., Martino, J.A., Collaert, N., Simoen, E., Claeys, C.

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GIDL behavior of p- and n-MuGFET devices with different TiN metal gate thickness and high-k gate dielectrics von Galeti, M., Rodrigues, M., Martino, J.A., Collaert, N., Simoen, E., Claeys, C.

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Improved generation lifetime model for the electrical characterization of single- and double-gate SOI nMOSFETs von Galeti, M, Martino, J A, Simoen, E, Claeys, C

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Effects of HfSiO nitridation and TiN metal gate thickness on p- and n-SOI MuGFETs for analog applications von Galeti, M, Rodrigues, M, Martino, J A, Collaert, N, Simoen, E, Claeys, C

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(Invited) Transistor-Based Extraction of Carrier Lifetime and Interface Traps Densities in Silicon-on-Insulator Materials von Martino, Joao Antonio, Sonnenberg, Victor, Galeti, Milene, Aoulaiche, Marc, Simoen, Eddy, Claeys, C.

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Analysis of the Self-Heating Effect in UTBOX Devices von Rodrigues, M., Cruz, E. O., Galeti, M., Martino, J. A.

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UTBOX SOI Devices with High-k Gate Dielectric Under Analog Perfomance von Galeti, M., Rodrigues, M., Aoulaiche, M., Collaert, N., Simoen, E., Claeys, C., Martino, J. A.

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Larger Intrinsic Voltage Gain Achieved with UTBOX SOI Devices and Thin Silicon Film von Rodrigues, Michele, Galeti, Milene, Martino, Joao A., Collaert, Nadine, Simoen, Eddy, Aoulaiche, Marc, Claeys, Cor

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TiN/HfSiON for Analog Applications of nMuGFETs von Rodrigues, Michele, Galeti, Milene, Martino, Joao A., Collaert, Nadine, Simoen, Eddy, Claeys, Cor

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SOI n- and pMuGFET Devices with Different TiN Metal Gate Thickness under Influence of Sidewall Crystal Orientation von Rodrigues, Michele, Galeti, Milene, Martino, João A., Collaert, Nadine, Simoen, Eddy, Claeys, Cor

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Estimating Temperature Dependence of Generation Lifetime Extracted from Drain Current Transients von Martino, J. A., Galeti, M., Rafí, J. M., Mercha, A., Simoen, E., Claeys, C.

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Analog Performance of SOI nFinFETs with Different TiN Gate Electrode Thickness von Galeti, Milene, Rodrigues, Michele, Collaert, Nadine, Simoen, Eddy, Claeys, Cor, Martino, João A.

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Estimating temperature dependence of generation lifetime extracted from drain current transients model von Martino, J A, Galeti, M, Rafi, J M, Mercha, A, Simoen, E, Claeys, C

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Improved Model to Determine the Generation Lifetime in Short Channel SOI nMOSFETs von Galeti, Milene, Martino, Joao Antonio A., Simoen, Eddy, Claeys, Cor

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BJT effect analysis in p- and n-SOI MuGFETs with high-k gate dielectrics and TiN metal gate electrode for a 1T-DRAM application von Galeti, M., Rodrigues, M., Martino, J. A., Collaert, N., Simoen, E., Aoulaiche, M., Jurczak, M., Claeys, C.

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Improved Model to Determine the Generation Lifetime in Double Gate SOI nMOSFETs von Galeti, M., Martino, Joao A., Simoen, E., Claeys, C.

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Impact of Halo Implantation on the Lifetime Assessment in Partially Depleted SOI Transistors von Galeti, Milene, Martino, João Antonio A., Simoen, Eddy R., Claeys, C. L.

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Analog parameters of MuGFET devices with different source/drain engineering von Galeti, M., Rodrigues, M., Martino, J. A., Collaert, N., Simoen, E., Aoulaiche, M., Claeys, C.

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