The Effect of Thermal Treatment on the Thermoelectric Figure of Merit of Silicon Doped Using Nuclear Transmutation von Gaidar, G. P.

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Electrophysical properties of compensated n-Germanium von Gaidar, G.P.

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Specificity of the electrophysical properties of elastically deformed p-type germanium von Gaidar, G.P.

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Thermoelectric properties of transmutation doped silicon crystals von Gaidar, G.P., Baranskii, P.I.

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Changes in electrophysical properties of heavily doped n-Ge single crystals under the influence of thermoannealings von Gaidar, G.

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Features of changes in electrophysical properties of silicon under the influence of thermal treatment von Gaidar, G.P., Baranskii, P.I.

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Tensoresistance of n-Ge with different crystallographic orientations in the presence of a classically high magnetic field and without it von Gaidar, G. P., Baranskii, P. I.

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Hall Effect in Germanium Doped with Different Impurities von Gaidar, G. P., Gaivoronskaya, E. Yu

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Effect of Thermal Annealings and Cooling Methods on Electrophysical Parameters of n Si Doped with Phosphorus Impurity Via the Melt and by Nuclear Transmutation Technique von Gaidar, G. P.

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Features of Galvanomagnetic Effects in n-Ge Crystals von Gaidar, G.P.

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Investigation of Changes in Resistivity of n-Si with Temperature and Uniaxial Stress von Gaidar, G.P.

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Features of the longitudinal and transverse tensoresistances of low-resistance n-Si von Gaidar, G.P.

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Thermo-emf anisotropy and thermoefficiency parameter of the elastically deformed germanium and silicon with different doping levels von Gaidar, G.P.

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Particularities of the formation of radiation defects in silicon with low and high concentrations of oxygen von Dolgolenko, A. P., Litovchenko, P. G., Varentsov, M. D., Gaidar, G. P., Litovchenko, A. P.

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On the tensoresistance of n-Ge and n-Si crystals with radiation-induced defects von Gaidar, G. P.

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Determination of the Degree of Homogeneity for n Ge Crystals by Measurements of Magnetoresistance in Classically Weak Magnetic Fields von Gaidar, G. P., Baranskii, P. I.

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Influence of different thermal treatment regimes on the hall parameters and the lifetime of charge carriers of transmutation doped silicon crystals von Gaidar, G. P.

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Features of tensoresistance depending on the crystallographic orientation of γ-irradiated (60Co) germanium and silicon single crystals von Gaidar, G.P., Baranskii, P.I.

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On the kinetics of electron processes in [sup.60]Co γ-irradiated n-Ge single crystals von Gaidar, G.P

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On the kinetics of electron processes in 60Co γ-irradiated n-Ge single crystals von Gaidar, G. P.

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