UV-cured gel polymer electrolytes with improved stability for advanced aqueous Li-ion batteries von Langevin, Spencer A, Tan, Bing, Freeman, Adam W, Gagnon, Jarod C, Hoffman, Christopher M, Logan, Matthew W, Maranchi, Jeffrey P, Gerasopoulos, Konstantinos

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An Untethered Soft Robot Based on Liquid Crystal Elastomers von Boothby, Jennifer M, Gagnon, Jarod C, McDowell, Emil, Van Volkenburg, Tessa, Currano, Luke, Xia, Zhiyong

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Untethered Autonomous Soft Robotics von Xia, Zhiyong, Van Volkenburg, Tessa B, Boothby, Jennifer M, Gagnon, Jarod C, McDowell, Emil G, Currano, Luke J, Trexler, Morgana M

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A pathway to compound semiconductor additive manufacturing von Gagnon, Jarod C., Presley, Michael, Le, Nam Q., Montalbano, Timothy J., Storck, Steven

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The influence of buffer layer coalescence on stress evolution in GaN grown on ion implanted AlN/Si(111) substrates von Gagnon, Jarod C., Leathersich, Jeffrey M., Shahedipour-Sandvik, Fatemeh (Shadi), Redwing, Joan M.

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In Situ Stress Measurements During GaN Growth on Ion-Implanted AlN/Si Substrates von Gagnon, Jarod C., Tungare, Mihir, Weng, Xiaojun, Leathersich, Jeffrey M., Shahedipour-Sandvik, Fatemeh, Redwing, Joan M.

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Role of substrate temperature and tellurium flux on the electrical and optical properties of MBE grown GeTe and Sb2Te3 thin films on GaAs (100) von Podpirka, Adrian, Gagnon, Jarod, Zgrabik, Christine, Pierce, Jonathan, Shrekenhamer, David

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Molecular beam epitaxy growth of low-bandgap material thick films using a molybdenum disilicide coated backing plate for substrate temperature control von Podpirka, Adrian, Brupbacher, Michael, Zgrabik, Christine, Gagnon, Jarod C., Shrekenhamer, David

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Evaluation and Mitigation of Impurities in Additively Manufactured Epitaxial Gallium Nitride von Berkson, Michael A., Pogue, Elizabeth A., Bartlett, Mairead E., Shuler, Scott A., Kesavan, Meera M., Montalbano, Timothy J., Bennett-Jackson, Andrew L., Abraham, John B., Martins, Isabela Z., Terlier, Tanguy, Gagnon, Jarod C.

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Epitaxial Chalcogenide Deposition for Optical Phase Change Devices von Podpirka, Adrian A, Shrekenhamer, David B, Zgrabik, Christine M, Gagnon, Jarod C, Pierce, Jonathan M

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Heteroepitaxial growth of GaN on vertical Si{110} sidewalls formed on trench-etched Si(001) substrates von Gagnon, Jarod C., Shen, Haoting, Yuwen, Yu, Wang, Ke, Mayer, Theresa S., Redwing, Joan M.

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Structural and electrical properties of epitaxial Bi 2 Se 3 thin films grown by hybrid physical-chemical vapor deposition von Brom, Joseph E., Ke, Yue, Du, Renzhong, Won, Dongjin, Weng, Xiaojun, Andre, Kalissa, Gagnon, Jarod C., Mohney, Suzanne E., Li, Qi, Chen, Ke, Xi, X. X., Redwing, Joan M.

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METHOD FOR PRINTING WIDE BANDGAP SEMICONDUCTOR MATERIALS von Gagnon, Jarod C

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In Situ Stress Measurements During GaN Growth on Ion-Implanted AIN/Si Substrates von GAGNON, Jarod C, TUNGARE, Mihir, WENG, Xiaojun, LEATHERSICH, Jeffrey M, SHAHEDIPOUR-SANDVIK, Fatemeh, REDWING, Joan M

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Methods Of Recycling Target Elements From Metallic Components von Pogue, Elizabeth A, Gagnon, Jarod C, Shuler, Scott A, Sturm, Cheryl E

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APPARATUS FOR PRINTING WIDE BANDGAP SEMICONDUCTOR MATERIALS von Gagnon, Jarod C, Presley, Michael J, Storck, Steven M, Maranchi, Jeffrey P

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Method for printing wide bandgap semiconductor materials von Gagnon, Jarod C, Presley, Michael J, Storck, Steven M, Shuler, Scott A, Maranchi, Jeffrey P, Ohiri, Korine A

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QUILTED INSULATING DIVING GLOVE von Gagnon, Jarod C, Jacque, Evan D, Seker, Drew P, Jin, Michael H, Bontje, Kenneth, Fairbanks, Nathan J, Bollong, Mark

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METHOD FOR PRINTING WIDE BANDGAP SEMICONDUCTOR MATERIALS von Gagnon, Jarod C, Presley, Michael J, Storck, Steven M, Shuler, Scott A, Maranchi, Jeffrey P, Ohiri, Korine A

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Gallium Nitride Growth on Silicon von REDWING Joan M, ROBINSON Joshua A, SADWICK Laurence P, GAGNON Jarod Christopher

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