Switching between the mode-locking and Q-switching modes in two-section QW lasers upon a change in the absorber properties due to the Stark effect von Gadzhiyev, I. M., Buyalo, M. S., Gubenko, A. E., Egorov, A. Yu, Usikova, A. A., Il’inskaya, N. D., Lyutetskiy, A. V., Zadiranov, Yu. M., Portnoi, E. L.

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Passive modelocking due to diagonal optical transition in asymmetric double quantum well von Buyalo, M.S., Gadzhiyev, I.M., Gorbacevich, A.A., Egorov, A. Yu, Bakshaev, I.O., Zadiranov, Yu.M., Il'inskaya, N.D., Portnoi, E.L.

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Influence of GaAs spacer-layer thickness on quantum coupling and optical polarization in a ten-layer system of vertically correlated InAs/GaAs quantum dots von Sobolev, M. M., Gadzhiyev, I. M., Buyalo, M. S., Nevedomskiy, V. N., Zadiranov, Yu. M., Zolotareva, R. V., Vasil’ev, A. P., Ustinov, V. M.

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Polarization dependences of electroluminescence and absorption of vertically correlated InAs/GaAs QDs von Sobolev, M. M., Gadzhiyev, I. M., Bakshaev, I. O., Nevedomskiy, V. N., Buyalo, M. S., Zadiranov, Yu. M., Zolotareva, R. V., Portnoi, E. L.

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