Highest transmittance and high-mobility amorphous indium gallium zinc oxide films on flexible substrate by room-temperature deposition and post-deposition anneals von Gadre, Mandar J., Alford, T. L.

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Susceptor-assisted microwave annealing for activation of arsenic dopants in silicon von Alford, T.L., Gadre, Mandar J., Vemuri, Rajitha N.P., Theodore, N. David

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Dopant Activation in Arsenic-Implanted Si by Susceptor-Assisted Low-Temperature Microwave Anneal von Vemuri, R. N. P., Gadre, M. J., Theodore, N. D., Alford, T. L.

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Susceptor assisted microwave annealing for recrystallization and dopant activation of arsenic-implanted silicon von Vemuri, Rajitha N. P., Gadre, Mandar J., Theodore, N. D., Chen, W., Lau, S. S., Alford, T. L.

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