Treffer 1 - 5 von 5 für Suche 'Gadepally, Bhaskar', Suchdauer: 0,38s Treffer weiter einschränken
  1. 1
    Impact ionization rate of electrons for accurate simulation of substrate current in submicron devices

    Impact ionization rate of electrons for accurate simulation of substrate current in submicron devices von Saha, Samar, Yeh, Chune-Sin, Gadepally, Bhaskar

    Veröffentlicht in Solid-state electronics

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  2. 2
    Dmost junction breakdown enhancement

    Dmost junction breakdown enhancement von ARONOWITZ, SHELDON, WALKER, GEORGE P, MENG, PETER, GADEPALLY, BHASKAR V. S, MOHAMMADI, FARROKH

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  3. 3
    MOS MEMORY CELL WITH EXPONENTIALLY-PROFILED DOPING AND OFFSET FLOATING GATE TUNNEL OXIDATION

    MOS MEMORY CELL WITH EXPONENTIALLY-PROFILED DOPING AND OFFSET FLOATING GATE TUNNEL OXIDATION von ARONOWITZ, SHELDON, GADEPALLY, BHASKAR V.S, FORSYTHE, DONALD D, WALKER, GEORGE P

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  4. 4
    NASFLOW, a simulation tool for silicon technology development

    NASFLOW, a simulation tool for silicon technology development von Forsythe, D. David, Agarwal, Atul P., Yeh, Chune-Sin, Aronowitz, Sheldon, Gadepally, Bhaskar

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  5. 5
    MOS memory cell with exponentially-profiled doping and offset floating gate tunnel oxidation

    MOS memory cell with exponentially-profiled doping and offset floating gate tunnel oxidation von ARONOWITZ, SHELDON, WALKER, GEORGE P, GADEPALLY, BHASKAR V. S, FORSYTHE, DONALD D

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