Tuned high dielectric constant, low dielectric loss tangent with positive and negative values for PPy/MWCNTs/TiO2/Al2O3/n-Si von Ashery, Adel, Gaballah, A. E. H., Ahmed, Emad M.

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Novel negative capacitance, conductance at high and low frequencies in Au/Polypyrrole –MWCNT composite /TiO2/Al2O3/n-Si structure von Ashery, A, Gaballah, A E H, M Ahmed, Emad

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Negative series resistance and photo-response properties of Au/PPY-MWCNTs composite/TiO2/Al2O3/n-Si/Al photodiode von Ashery, A, Gaballah, A E H, M Ahmed, Emad

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Negative capacitance in Au/CuInGaSe 2 /SiO 2 /n-Si/Al Schottky barrier diode devices von Ashery, A, Gaballah, A E H, Basyooni-M Kabatas, Mohamed A

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Negative capacitance in Au/CuInGaSe2/SiO2/n-Si/Al Schottky barrier diode devices von Ashery, A, Gaballah, A E H, Kabatas, Mohamed A Basyooni-M

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The novel behavior of real and imaginary part of impedance, modulus, and AC conductivity of Au/PPy–MWCNTs/TiO2/Al2O3/n-Si/Al von Ashery, Adel, Gaballah, A. E. H.

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Effect of n and p-silicon Substrate on Dielectric Constant, Dielectric Loss Tangent of PPy-MWCNTs/TiO2/Al2O3 Structure von Ashery, A., Gaballah, A. E. H.

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Thermionic Emission of Atomic Layer Deposited MoO3/Si UV Photodetectors von Basyooni, Mohamed A., Gaballah, A. E. H., Tihtih, Mohammed, Derkaoui, Issam, Zaki, Shrouk E., Eker, Yasin Ramazan, Ateş, Şule

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Fabrication, Electrical and Dielectric Characterization of Au/CNT/TiO2/SiO2/p-Si/Al with High Dielectric Constant, Low Loss Dielectric Tangent von Ashery, A., Gad, S. A., Gaballah, A. E. H, Turky, G. M.

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Current Transport, Photosensitive, and Dielectric Properties of PVA/n-Si Heterojunction Photodiode von Ashery, A., Gaballah, A. E. H., Turky, G. M.

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Synthesis, characterization, and electrical properties of CuInGaSe2/SiO2/n-Si structure von Ashery, A., Elnasharty, Mohamed M. M., Salem, Mohamed Ali, Gaballah, A. E. H.

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Photoresponsivity, Electrical and Dielectric Properties of GaAs/P-Si Heterojunction-Based Photodiode von Ashery, A., Gaballah, A. E. H., Elnasharty, Mohamed M. M.

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Dielectric properties of epitaxially grown lattice-mismatched GaAs/p-Si heterojunction diode von Ashery, A., Gaballah, A.E.H., Elnasharty, Mohamed M.M., Basyooni-M. Kabatas, Mohamed A.

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EUV polarimetry for thin film and surface characterization and EUV phase retarder reflector development von Gaballah, A. E. H., Nicolosi, P., Ahmed, Nadeem, Jimenez, K., Pettinari, G., Gerardino, A., Zuppella, P.

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Optical characterization of high-quality spin-Coated PVA nanostructured films for photo-sensing application von Ashery, A., Gaballah, A.E.H., Farag, A.A.M.

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Responsivity and photo-transient response of Tb/Al/p-Si heterostructure solar detectors von Gaballah, A. E. H., Karmalawi, Abdallah

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Heterostructure Device Based on Graphene Oxide/TiO2/n-Si for Optoelectronic Applications von Ashery, A., Gad, S. A., Shaban, H., Gaballah, A. E. H.

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Impact of thickness on optoelectronic properties of α-MoO3 film photodetectors: Integrating first-principles calculations with experimental analysis von Basyooni, Mohamed A., Achehboune, Mohamed, Boukhoubza, Issam, Gaballah, A.E.H., Tihtih, Mohammed, Belaid, Walid, En-nadir, Redouane, Derkaoui, Issam, Abdelbar, Ahmed M., Zaki, Shrouk E., Ateş, Şule, Eker, Yasin Ramazan

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Illumination-Dependent I-V Characteristics of MgF 2 /Al Multilayered Photodetector von Gaballah, A. E. H., Karmalawi, Abdallah, ElMoghazy, E. M.

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Illumination-Dependent I-V Characteristics of MgF2/Al Multilayered Photodetector von Gaballah, A. E. H., Karmalawi, Abdallah, ElMoghazy, E. M.

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