Carrier mobility in organic field-effect transistors von Xu, Yong, Benwadih, Mohamed, Gwoziecki, Romain, Coppard, Romain, Minari, Takeo, Liu, Chuan, Tsukagoshi, Kazuhito, Chroboczek, Jan, Balestra, Francis, Ghibaudo, Gerard

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Deep Level Transient Fourier Spectroscopy Investigation of Electron Traps on AlGaN/GaN-on-Si Power Diodes von Rigaud-Minet, Florian, Raynaud, Christophe, Buckley, Julien, Charles, Matthew, Pimenta-Barros, Patricia, Gwoziecki, Romain, Gillot, Charlotte, Sousa, Véronique, Morel, Hervé, Planson, Dominique

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Modification of gold source and drain electrodes by self-assembled monolayer in staggered n- and p-channel organic thin film transistors von Boudinet, Damien, Benwadih, Mohamed, Qi, Yabing, Altazin, Stéphane, Verilhac, Jean-Marie, Kroger, Michael, Serbutoviez, Christophe, Gwoziecki, Romain, Coppard, Romain, Le Blevennec, Gilles, Kahn, Antoine, Horowitz, Gilles

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Capacitance Temperature Dependence Analysis of GaN-on-Si Power Transistors von Rigaud-Minet, Florian, Buckley, Julien, Vandendaele, William, Charles, Matthew, Jaud, Marie-Anne, Rémont, Elise, Morel, Hervé, Planson, Dominique, Gwoziecki, Romain, Gillot, Charlotte, Sousa, Véronique

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Impact of Blend Morphology on Interface State Recombination in Bulk Heterojunction Organic Solar Cells von Bouthinon, Benjamin, Clerc, Raphaël, Vaillant, Jérôme, Verilhac, Jean-Marie, Faure-Vincent, Jérôme, Djurado, David, Ionica, Irina, Man, Gabriel, Gras, Antoine, Pananakakis, Georges, Gwoziecki, Romain, Kahn, Antoine

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Analytic Model of Threshold Voltage (VTH) Recovery in Fully Recessed Gate MOS-Channel HEMT (High Electron Mobility Transistor) after OFF-State Drain Stress von Escoffier, René, Mohamad, Blend, Buckley, Julien, Gwoziecki, Romain, Biscarrat, Jérome, Sousa, Véronique, Orsatelli, Marc, Marcault, Emmanuel, Ranc, Julien, Modica, Roberto, Iucolano, Ferdinando

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Ambient Light Organic Sensor in a Printed Complementary Organic TFT Technology on Flexible Plastic Foil von Maiellaro, Giorgio, Ragonese, Egidio, Gwoziecki, Romain, Jacobs, Stephanie, Marjanovic, Nenad, Chrapa, Marek, Schleuniger, Jurg, Palmisano, Giuseppe

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Modeling of static electrical properties in organic field-effect transistors von Xu, Yong, Minari, Takeo, Tsukagoshi, Kazuhito, Gwoziecki, Romain, Coppard, Romain, Benwadih, Mohamed, Chroboczek, Jan, Balestra, Francis, Ghibaudo, Gerard

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Physics of the frequency response of rectifying organic Schottky diodes von Altazin, Stéphane, Clerc, Raphaël, Gwoziecki, Romain, Verilhac, Jean-Marie, Boudinet, Damien, Pananakakis, Georges, Ghibaudo, Gérard, Chartier, Isabelle, Coppard, Romain

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Step toward robust and reliable amorphous polymer field-effect transistors and logic functions made by the use of roll to roll compatible printing processes von Verilhac, Jean-Marie, Benwadih, Mohamed, Seiler, Anne-Laure, Jacob, Stephanie, Bory, Cecile, Bablet, Jacqueline, Heitzman, Marie, Tallal, Jamal, Barbut, Lucian, Frère, Philippe, Sicard, Gilles, Gwoziecki, Romain, Chartier, Isabelle, Coppard, Romain, Serbutoviez, Christophe

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Power transfer-length method for full biasing contact resistance evaluation of organic field-effect transistors von Xu, Yong, Minari, Takeo, Tsukagoshi, Kazuhito, Gwoziecki, Romain, Coppard, Romain, Balestra, Francis, Ghibaudo, Gerard

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Static and Dynamic Studies of Electro-Active Polymer Actuators and Integration in a Demonstrator von Poncet, Pauline, Casset, Fabrice, Latour, Antoine, Domingues Dos Santos, Fabrice, Pawlak, Sébastien, Gwoziecki, Romain, Devos, Arnaud, Emery, Patrick, Fanget, Stéphane

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On the Understanding of Cathode Related Trapping Effects in GaN-on-Si Schottky Diodes von Lorin, Thomas, Ghibaudo, G., Gaillard, F., Vandendaele, William, Gwoziecki, Romain, Baines, Yannick, Biscarrat, Jerome, Jaud, Marie-Anne, Gillot, Charlotte, Charles, Matthew, Plissonnier, Marc

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Analytical modeling of the contact resistance in top gate/bottom contacts organic thin film transistors von Altazin, Stéphane, Clerc, Raphaël, Gwoziecki, Romain, Boudinet, Damien, Ghibaudo, Gérard, Pananakakis, Georges, Chartier, Isabelle, Coppard, Romain

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Fully printed organic CMOS technology on plastic substrates for digital and analog applications von Daami, A, Bory, C, Benwadih, M, Jacob, S, Gwoziecki, R, Chartier, I, Coppard, R, Serbutoviez, C, Maddiona, L, Fontana, E, Scuderi, A

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Refinement of the Subthreshold Slope Modeling for Advanced Bulk CMOS Devices von Pouydebasque, A., Charbuillet, C., Gwoziecki, R., Skotnicki, T.

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Importance of layer distribution in Ni and Au based ohmic contacts to p-type GaN von Mauduit, Clément, Tlemcani, Taoufik Slimani, Zhang, Meiling, Yvon, Arnaud, Vivet, Nicolas, Charles, Matthew, Gwoziecki, Romain, Alquier, Daniel

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Importance of layer distribution in Ni and Au based ohmic contacts to p-type GaN von Mauduit, Clément, Tlemcani, Taoufik Slimani, Zhang, Meiling, Yvon, Arnaud, Vivet, Nicolas, Charles, Matthew, Gwoziecki, Romain, Alquier, Daniel

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Development of Low-Resistance Ohmic Contacts with Bilayer NiO/Al-Doped ZnO Thin Films to p‑type GaN von Slimani Tlemcani, Taoufik, Mauduit, Clément, Bah, Micka, Zhang, Meiling, Charles, Matthew, Gwoziecki, Romain, Yvon, Arnaud, Alquier, Daniel

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Influence of AlGaN n-type doping and AlN thickness on the two-dimensional electron gas density (ns) and resistance (R2DEG) von Piotrowicz, C., Mohamad, B., Malbert, N., Jaud, M.-A., Vandendaele, W., Charles, M., Gwoziecki, R.

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