Treffer 1 - 8 von 8 für Suche 'GUTSCH, MANUELA', Suchdauer: 0,72s Treffer weiter einschränken
  1. 1
    15 days electron beam exposure for manufacturing of large area silicon based NIL master : Nanolithography 2012

    15 days electron beam exposure for manufacturing of large area silicon based NIL master : Nanolithography 2012 von THRUN, Xaver, CHOI, Kang-Hoon, FREITAG, Martin, GUTSCH, Manuela, HOHLE, Christoph, PAUL, Jan, RUDOLPH, Matthias, STEIDEL, Katja


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  2. 2
    Nano patterning at Fraunhofer IPMS-CNT: Fabrication of silicon master for NIL via e-beam direct write: Poster presented at Workshop on µ-contact-printing and nanoimprint technology 2015; Dresden, Germany, 9th March 2015

    Nano patterning at Fraunhofer IPMS-CNT: Fabrication of silicon master for NIL via e-beam direct write: Poster presented at Workshop on µ-contact-printing and nanoimprint technology... von Thrun, Xaver, Choi, Kang-Hoon, Gutsch, Manuela, Hohle, Christoph, Rudolph, Matthias, Seidel, Konrad

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  3. 3
    Semiconductor device, method for manufacturing semiconductor devices and mask systems used in the manufacturing of semiconductor devices

    Semiconductor device, method for manufacturing semiconductor devices and mask systems used in the manufacturing of semiconductor devices von BLAWID STEFAN, PRITCHARD DAVID, GUTSCH MANUELA, ROESSIGER MARTIN, KNOEFLER ROMAN, LATTARD LUDOVIC

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    Patent

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  4. 4
    Semiconductor device, method for manufacturing semiconductor devices and mask systems used in the manufacturing of semiconductor devices

    Semiconductor device, method for manufacturing semiconductor devices and mask systems used in the manufacturing of semiconductor devices von Blawid, Stefan, Lattard, Ludovic, Knoefler, Roman, Gutsch, Manuela, Pritchard, David, Roessiger, Martin

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    Patent

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  5. 5
    Semiconductor device manufacturing method, involves providing semiconductor substrate available with surface, and layer pile comprising conductive layer on substrate surface

    Semiconductor device manufacturing method, involves providing semiconductor substrate available with surface, and layer pile comprising conductive layer on substrate surface von ROESSIGER, MARTIN, GUTSCH, MANUELA, BLAWID, STEFAN, BAUCH, LOTHAR, LATTARD, LUDOVIC

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    Patent

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  6. 6
    Hard masking layer stack for use in semiconductor memory device, has carbon layer arranged on layer to be structured, and covering layer arranged on intermediate layer, where intermediate layer is thicker than covering layer

    Hard masking layer stack for use in semiconductor memory device, has carbon layer arranged on layer to be structured, and covering layer arranged on intermediate layer, where inter... von TATRY, THOMAS, GUTSCH, MANUELA, ROESSIGER, MARTIN, NAGEL, NICOLAS, CASPARY, DIRK, BLAWID, STEFAN, BOUBEKEUR, HOCINE, MANGER, DIRK, LATTARD, LUDOVIC, VERHOEVEN, MARTIN, BAUCH, LOTHAR, MARKERT, MATTHIAS, VOGT, MIRKO

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    Patent

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  7. 7
    Hard Mask Layer Stack And A Method Of Patterning

    Hard Mask Layer Stack And A Method Of Patterning von NAGEL NICOLAS, MANGER DIRK, VERHOEVEN MARTIN, BLAWID STEFAN, GUTSCH MANUELA, BAUCH LOTHAR, BOUBEKEUR HOCINE, TATRY THOMAS, VOGT MIRKO, ROESSIGER MARTIN, MARKERT MATTHIAS, CASPARY DIRK, LATTARD LUDOVIC

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    Patent

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  8. 8
    Verfahren zur Bestimmung von Parametern einer Proximity-Funktion, insbesondere für die Korrektur des Proximity-Effekts bei der Elektronenstrahllithografie

    Verfahren zur Bestimmung von Parametern einer Proximity-Funktion, insbesondere für die Korrektur des Proximity-Effekts bei der Elektronenstrahllithografie von STEIDEL, KATJA, GUTSCH, MANUELA, JASCHINSKY, PHILIPP, CHOI, KANG-HOON, HAUPTMANN, MARC

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    Patent

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