Anomalous excess noise behavior in thick Al0.85Ga0.15As0.56Sb0.44 avalanche photodiodes von Lewis, Harry I. J., Jin, Xiao, Guo, Bingtian, Lee, Seunghyun, Jung, Hyemin, Kodati, Sri Harsha, Liang, Baolai, Krishna, Sanjay, Ong, Duu Sheng, Campbell, Joe C., David, John P. R.

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Broadband Quantum Efficiency Enhancement of Al0.3InAsSb p–i–n Photodiodes with All‐Dielectric Amorphous Germanium Metasurfaces von Wei, Dongxia, Guo, Bingtian, Dadey, Adam A., McArthur, J. Andrew, Bai, Junwu, Bank, Seth R., Campbell, Joe C.

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InGaAs/AlInAsSb avalanche photodiodes with low noise and strong temperature stability von Guo, Bingtian, Schwartz, Mariah, Kodati, Sri H., McNicholas, Kyle M., Jung, Hyemin, Lee, Seunghyun, Konowitch, Jason, Chen, Dekang, Bai, Junwu, Guo, Xiangwen, Ronningen, Theodore J., Grein, Christoph H., Campbell, Joe C., Krishna, Sanjay

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Photon-trapping-enhanced avalanche photodiodes for mid-infrared applications von Chen, Dekang, March, Stephen D., Jones, Andrew H., Shen, Yang, Dadey, Adam A., Sun, Keye, McArthur, J. Andrew, Skipper, Alec M., Xue, Xingjun, Guo, Bingtian, Bai, Junwu, Bank, Seth R., Campbell, Joe C.

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Thermal dissipation enhancement in flip-chip bonded uni-traveling carrier photodiodes von Bai, Junwu, Shen, Yang, Yao, Peng, Chen, Dekang, Konkol, Matthew, Guo, Bingtian, Guo, Xiangwen, Carey, Victoria, Campbell, Joe C., Prather, Dennis

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High-Gain Ka-Band Analog Photonic Link Using High-Power Photodiode at 1064 nm von Peng, Yiwei, Sun, Keye, Shen, Yang, Guo, Bingtian, Beling, Andreas, Campbell, Joe C.

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Digital Alloy-Grown InAs/GaAs Short-Period Superlattices with Tunable Band Gaps for Short-Wavelength Infrared Photodetection von Guo, Bingtian, Liang, Baolai, Zheng, Jiyuan, Ahmed, Sheikh, Krishna, Sanjay, Ghosh, Avik, Campbell, Joe

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Frequency behavior of AlInAsSb nBn photodetectors and the development of an equivalent circuit model von Chen, Dekang, Sun, Keye, Shen, Yang, Jones, Andrew H., Dadey, Adam A., Guo, Bingtian, McArthur, J. Andrew, Bank, Seth R., Campbell, Joe C.

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High-performance modified uni-traveling carrier photodiode integrated on a thin-film lithium niobate platform von Guo, Xiangwen, Shao, Linbo, He, Lingyan, Luke, Kevin, Morgan, Jesse, Sun, Keye, Gao, Junyi, Tzu, Ta-Ching, Shen, Yang, Chen, Dekang, Guo, Bingtian, Yu, Fengxin, Yu, Qianhuan, Jafari, Masoud, Lončar, Marko, Zhang, Mian, Beling, Andreas

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Linear Mode Avalanche Photodiodes With Antimonide Multipliers on InP Substrates von Krishna, Sanjay, Lee, Seunghyun, Kodati, Sri Harsha, Schwartz, Mariah, Jung, Hyemin, Ronningen, Theodore J., Guo, Bingtian, Jones, Andrew H., Winslow, Martin, Campbell, Joseph C., Grein, Christoph H.

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Impact Ionization Coefficients of Digital Alloy and Random Alloy Al0.85Ga0.15As0.56Sb0.44 in a Wide Electric Field Range von Guo, Bingtian, Jin, Xiao, Lee, Seunghyun, Ahmed, Sheikh Z., Jones, Andrew H., Xue, Xingjun, Liang, Baolai, Lewis, Harry I. J., Kodati, Sri H., Chen, Dekang, Ronningen, Theodore J., Grein, Christoph H., Ghosh, Avik W., Krishna, Sanjay, David, John P. R., Campbell, Joe C.

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Temperature Dependence of Avalanche Breakdown of AlGaAsSb and AlInAsSb Avalanche Photodiodes von Guo, Bingtian, Ahmed, Sheikh Z., Xue, Xingjun, Rockwell, Ann-Kathryn, Ha, Jaedu, Lee, Seunghyun, Liang, Baolai, Jones, Andrew H., McArthur, J. Andrew, Kodati, Sri H., Ronningen, Theodore J., Krishna, Sanjay, Kim, Jong Su, Bank, Seth R., Ghosh, Avik W., Campbell, Joe C.

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Broadband Quantum Efficiency Enhancement of Al 0.3 InAsSb p–i–n Photodiodes with All‐Dielectric Amorphous Germanium Metasurfaces von Wei, Dongxia, Guo, Bingtian, Dadey, Adam A., McArthur, J. Andrew, Bai, Junwu, Bank, Seth R., Campbell, Joe C.

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Impact Ionization Coefficients of Digital Alloy and Random Alloy Al 0.85 Ga 0.15 As 0.56 Sb 0.44 in a Wide Electric Field Range von Guo, Bingtian, Jin, Xiao, Lee, Seunghyun, Ahmed, Sheikh Z., Jones, Andrew H., Xue, Xingjun, Liang, Baolai, Lewis, Harry I. J., Kodati, Sri H., Chen, Dekang, Ronningen, Theodore J., Grein, Christoph H., Ghosh, Avik W., Krishna, Sanjay, David, John P. R., Campbell, Joe C.

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Anomalous excess noise behavior in thick Al 0.85 Ga 0.15 As 0.56 Sb 0.44 avalanche photodiodes von Lewis, Harry I J, Jin, Xiao, Guo, Bingtian, Lee, Seunghyun, Jung, Hyemin, Kodati, Sri Harsha, Liang, Baolai, Krishna, Sanjay, Ong, Duu Sheng, Campbell, Joe C, David, John P R

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Elevator pit water level detection device von GUO BINGTIAN, XU WEI

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Explosion-proof automatic powder spraying device von LIANG KAI, GUO BINGTIAN, TIAN JIAN, CHEN SHOUFENG, WEI GUANGKUN, LI LIANG

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Identification of Shield Tunnel Segment Joint Opening Based on Annular Seam Pressure Monitoring von Xu, Hongbin, Liu, Qucheng, Li, Bingtian, Guo, Chuanrui

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Vesicle trafficking in rice: too little is known von Zhu, Xiaobo, Yin, Junjie, Guo, Hongming, Wang, Yuping, Ma, Bingtian

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Hierarchical optimization of current‐limiting devices with discrete parameters in multi‐terminal DC power grids von Mei, Jun, Chen, Xiaoyu, Zhang, Bingtian, Zhang, Sen, Lei, Liupeng, Guo, Jiawei

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