VOn Complexes in RTA Treated Czochralski Silicon Wafers Investigated by FTIR Spectroscopy von Kot, Dawid, Kissinger, Gudrun, Dabrowski, Jaroslaw, Sattler, Andreas

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Investigation of Dislocations Introduced in Si Wafer during Flash Lamp Annealing by Photoluminescence Spectroscopy von Ryzhak, Diana, Kissinger, Gudrun, Ehlert, Andreas, Sattler, Andreas, Spirito, Davide, Kot, Dawid

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Investigation of the impact of amorphous silicon layers deposited by PECVD and HDP-CVD on oxide precipitation in silicon von Kissinger, Gudrun, Kot, Dawid, Bärwolf, Florian, Lisker, Marco

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Getter Effects in Low Oxygen and High Oxygen Czochralski Silicon Wafers von Kissinger, Gudrun, Kot, Dawid, Häckl, Walter

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Sensitivity enhanced FTIR investigation of defects introduced by RTA pre-treatment in Czochralski silicon wafers von Kot, Dawid, Kissinger, Gudrun, Sattler, Andreas

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Gettering and Defect Engineering in Semiconductor Technology (GADEST 2019) von Kissinger, Gudrun, Kot, Dawid, Richter, Hans, Zöllner, Marvin

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Comparison of Evaluation Criteria for Efficient Gettering of Cu and Ni in Silicon Wafers von Kot, Dawid, Kissinger, Gudrun, Sattler, Andreas, Von Ammon, Wilfried

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Simulation of Nitrogen Indiffusion and Its Impact on Silicon Wafer Strength von Müller, Timo, Kissinger, Gudrun, Kot, Dawid, Gehmlich, Michael, Boy, Michael, Vollkopf, Alexander, Sattler, Andreas, Miller, Alfred

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Oxygen Precipitation in Silicon von Kissinger, Gudrun

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Near‐Surface Defect Control by Vacancy Injecting/Out‐Diffusing Rapid Thermal Annealing von Müller, Timo, Gehmlich, Michael, Sattler, Andreas, Kissinger, Gudrun, Kot, Dawid, Daub, Erich, Miller, Alfred

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The Role of Vacancies and Oxygen for Setting up an Efficient Getter for Cu and Ni in Silicon Wafers von Kot, Dawid, Kissinger, Gudrun, Haeckl, Walter, Sattler, Andreas, Von Ammon, Wilfried

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VO n Complexes in RTA Treated Czochralski Silicon Wafers Investigated by FTIR Spectroscopy von Kot, Dawid, Kissinger, Gudrun, Dabrowski, Jaroslaw, Sattler, Andreas

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About the influence of deposited nitride layers on oxide precipitation after RTA pre‐treatment von Kissinger, Gudrun, Kot, Dawid, Dabrowski, Jaroslaw, Grabolla, Thomas, Müller, Timo, Sattler, Andreas

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Simulation of vacancy agglomeration based on ab initio calculations and comparison with experimental results von Kissinger, Gudrun, Dabrowski, Jarek, Kot, Dawid

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Void-free silicon-wafer-bond strengthening in the 200–400 °C range von Kissinger, Gudrun, Kissinger, Wolfgang

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Materials Research for Group IV Semiconductors von Pizzini, Sergio and, Kissinger, Gudrun

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Materials Research for Group IV Semiconductors von Pizzini, Sergio and, Kissinger, Gudrun

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Investigation of the Composition of the Si/SiO 2 Interface in Oxide Precipitates and Oxide Layers on Silicon by STEM/EELS von Kissinger, Gudrun, Schubert, Markus Andreas, Kot, Dawid, Grabolla, Thomas

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Characterization of Nanometer‐Sized Oxygen Precipitates in Highly B‐Doped Czochralski Silicon von Kot, Dawid, Kissinger, Gudrun, Schubert, Markus Andreas, Marschmeyer, Steffen, Schwalb, Georg, Sattler, Andreas

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Composition of oxygen precipitates in Czochralski silicon wafers investigated by STEM with EDX/EELS and FTIR spectroscopy von Kot, Dawid, Kissinger, Gudrun, Schubert, Markus Andreas, Klingsporn, Max, Huber, Andreas, Sattler, Andreas

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