An Accurate Analytical Current Model of Double-gate Heterojunction Tunneling FET von Guan, Yunhe, Li, Zunchao, Zhang, Wenhao, Zhang, Yefei

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Widely linear complex kernel risk-sensitive loss affine projection algorithm and its variant von Guan, Yunhe, Wang, Yan, Shen, Luping, Qian, Guobing

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An accurate analytical surface potential model of heterojunction tunnel FET von Guan, Yunhe, Li, Huan, Chen, Haifeng, Huang, Siwei

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Investigation Influence of Channel Transport on Output Characteristics in Sub-100nm Heterojunction Tunnel FET von Guan, Yunhe, Chen, Haifeng, Huang, Siwei, Liang, Feng

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Efficacy and safety of systemic treatment for progressive and refractory desmoid tumor: a systematic review and Bayesian network meta-analysis von Ou, Junyong, Su, Dandan, Guan, Yunhe, Ge, Liyuan, Deng, Shaohui, Yan, Ye, Hao, Yichang, Lu, Min, Zhang, Shudong, Xie, Ruiyang

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An Accurate and Full-Range Analytical Current Model for Nanowire Heterojunction TFET von Guan, Yunhe, Dou, Zhen, Lu, Jiachen, Huang, Siwei, Chen, Haifeng

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Analytical Drain Current Model of Double-Gate Monolayer Transition Metal Dichalcogenide TFET von Zhang, Yefei, Li, Zunchao, Guan, Yunhe

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An Analytical Model of Gate-All-Around Heterojunction Tunneling FET von Guan, Yunhe, Li, Zunchao, Zhang, Wenhao, Zhang, Yefei, Liang, Feng

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Impact of the Figures of Merit (FoMs) Definitions on the Variability in Nanowire TFET: NEGF Simulation Study von Guan, Yunhe, Georgiev, Vihar P., Asenov, Asen, Liang, Feng, Chen, Haifeng

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Low temperature growth of single-phase and preferentially oriented ɛ-Ga2O3 films on sapphire substrates via atomic layer deposition von Liu, Xiangtai, Wang, Jiayang, Jin, Lu, Fu, Jiao, Lu, Qin, Wang, Shaoqing, Jia, Yifan, Wang, Zhan, Guan, Yunhe, Chen, Haifeng

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A Full-Range Analytical Current Model for Heterojunction TFET With Dual Material Gate von Guan, Yunhe, Li, Zunchao, Zhang, Wenhao, Zhang, Yefei, Liang, Feng

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Effects of growth cycle number and annealing temperature on Ga2O3-on-quartz solar-blind photodetectors von Wang, Shaoqing, Zhao, Yan, Cheng, Nini, Ren, Yongtao, Liu, Xiangtai, Li, Lijun, Jia, Yifan, Guan, Yunhe, Chen, Haifeng, Peng, Songang

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A comparative study of work function variations in III-V heterojunction and homojunction tunnel field-effect transistors von Guan, Yunhe, Lu, Jiachen, Zhang, Hao, Dou, Zhen, Chen, Haifeng, Liang, Feng

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Quantum simulation investigation of work-function variation in nanowire tunnel FETs von Guan, Yunhe, Carrillo-Nuñez, Hamilton, Georgiev, Vihar P, Asenov, Asen, Liang, Feng, Li, Zunchao, Chen, Haifeng

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An Accurate Analytical Model for Tunnel FET Output Characteristics von Guan, Yunhe, Li, Zunchao, Carrillo-Nunez, Hamilton, Zhang, Yefei, Georgiev, Vihar P., Asenov, Asen, Liang, Feng

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A Study on the Performance of Gate-All-Around Heterojunction Tunnel Field-Effect Transistors Based on Polarization Effect von Guan, Yunhe, Dou, Zhen, Lu, Jiachen, Sun, Weihan, Wang, Shaoqing, Liu, Xiangtai, Chen, Haifeng

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Improved Ga2O3 films on variously oriented Si substrates with Al2O3 or HfO2 buffer layer via atomic layer deposition von Liu, Xiangtai, Wang, Jiayang, Xu, Zhitian, Wang, Shaoqing, Jia, Yifan, Lu, Qin, Wang, Zhan, Guan, Yunhe, Li, Lijun, Chen, Haifeng

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Dual-Schottky-junctions coupling device based on ultra-long β-Ga2O3 single-crystal nanobelt and its photoelectric properties von Chen, Haifeng, Han, Xiaocong, Wu, Chenlu, Liu, Zhanhang, Wang, Shaoqing, Liu, Xiangtai, Lu, Qin, Jia, Yifan, Wang, Zhan, Guan, Yunhe, Li, Lijun, Hao, Yue

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Dual-Schottky-junctions coupling device based on ultra-long β-Ga 2 O 3 single-crystal nanobelt and its photoelectric properties von Chen, Haifeng, Han, Xiaocong, Wu, Chenlu, Liu, Zhanhang, Wang, Shaoqing, Liu, Xiangtai, Lu, Qin, Jia, Yifan, Wang, Zhan, Guan, Yunhe, Li, Lijun, Hao, Yue

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Influence of Hydrogen-Nitrogen Hybrid Passivation on the Gate Oxide Film of n-Type 4H-SiC MOS Capacitors von Jia, Yifan, Sun, Shengjun, Liu, Xiangtai, Lu, Qin, Qin, Ke, Wang, Shaoqing, Guan, Yunhe, Chen, Haifeng, Tang, Xiaoyan, Zhang, Yuming

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