40-Gbit/s all-optical circulating shift register with an inverter von Hall, K L, Donnelly, J P, Groves, S H, Fennelly, C I, Bailey, R J, Napoleone, A

Volltext

1.5-μm tapered-gain-region lasers with high-CW output powers von Donnelly, J.P., Walpole, J.N., Groves, S.H., Bailey, R.J., Missaggia, L.J., Napoleone, A., Reeder, R.E., Cook, C.C.

Volltext

Afterpulsing in Geiger-mode avalanche photodiodes for 1.06μm wavelength von Jensen, K. E., Hopman, P. I., Duerr, E. K., Dauler, E. A., Donnelly, J. P., Groves, S. H., Mahoney, L. J., McIntosh, K. A., Molvar, K. M., Napoleone, A., Oakley, D. C., Verghese, S., Vineis, C. J., Younger, R. D.

Volltext

InGaAsP/InP avalanche photodiodes for photon counting at 1.06 μm von McIntosh, K. A., Donnelly, J. P., Oakley, D. C., Napoleone, A., Calawa, S. D., Mahoney, L. J., Molvar, K. M., Duerr, E. K., Groves, S. H., Shaver, D. C.

Volltext

Proton bombardment for enhanced four-wave mixing in InGaAsP-InP waveguides von Thoen, E.R., Donnelly, J.P., Groves, S.H., Hall, K.L., Ippen, E.P.

Volltext

Low-threshold InGaAs strained-layer quantum-well lasers (λ=0.98 μm) with GaInP cladding layers and mass-transported buried heterostructure von LIAU, Z. L, PALMATEER, S. C, GROVES, S. H, WALPOLE, J. N, MISSAGGIA, L. J

Volltext

Nondegenerate four-wave mixing wavelength conversion in low-loss passive InGaAsP-InP quantum-well waveguides von Donnelly, J.P., Le, H.Q., Swanson, E.A., Groves, S.H., Darwish, A., Ippen, E.P.

Volltext

Slab-coupled 1.3-μm semiconductor laser with single-spatial large-diameter mode von Walpole, J.N., Donnelly, J.P., Taylor, P.J., Missaggia, L.J., Harris, C.T., Bailey, R.J., Napoleone, A., Groves, S.H., Chinn, S.R., Huang, R., Plant, J.

Volltext

Short-pulse wavelength shifting by four wave mixing in passive InGaAsP/InP waveguides von Darwish, A. M., Ippen, E. P., Le, H. Q., Donnelly, J. P., Groves, S. H., Swanson, E. A.

Volltext

InGaAs/GaInAsP/GaInP strained-layer quantum well separate-confinement heterostructures grown by OMVPE von Groves, S.H.

Volltext

New materials for diode laser pumping of solid-state lasers von Wang, C.A., Groves, S.H.

Volltext

Lateral photodetectors on semi-insulating InGaAs and InP von DIADIUK, V, GROVES, S. H

Volltext

Critical layer thickness of strained-layer InGaAs/GaAs multiple quantum wells determined by double-crystal x-ray diffraction von WANG, C. A, GROVES, S. H, REINOLD, J. H, CALAWA, D. R

Volltext

Impact ionization in (100), (110), and (111) oriented InP avalanche photodiodes von Armiento, C. A., Groves, S. H.

Volltext

Flow visualization studies for optimization of OMVPE reactor design von Wang, C.A., Groves, S.H., Palmateer, S.C., Weyburne, D.W., Brown, R.A.

Volltext

GaInP mass transport and GaInP/GaAs buried-heterostructure lasers von Groves, S. H., Liau, Z. L., Palmateer, S. C., Walpole, J. N.

Volltext

Ionization coefficients of electrons and holes in InP von Armiento, C. A., Groves, S. H., Hurwitz, C. E.

Volltext

Donor identification in liquid phase epitaxial indium phosphide von SKOLNICK, M. S, DEAN, P. J, GROVES, S. H, KUPHAL, E

Volltext

Q switching of low-threshold buried-heterostructure diode lasers at 10 GHz von TSANG, D. Z, WALPOLE, J. N, LIAU, Z. L, GROVES, S. H, DIADIUK, V

Volltext

Avalanche multiplication and noise characteristics of low-dark-current GaInAsP/InP avalanche photodetectors von Diadiuk, V., Groves, S. H., Hurwitz, C. E.

Volltext