DNA assembly with error correction on a droplet digital microfluidics platform von Khilko, Yuliya, Weyman, Philip D, Glass, John I, Adams, Mark D, McNeil, Melanie A, Griffin, Peter B

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Negative Differential Resistance Circuit Design and Memory Applications von Shu-Lu Chen, Griffin, P.B., Plummer, J.D.

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Integration of Germanium-on-Insulator and Silicon MOSFETs on a Silicon Substrate von Jia Feng, Yaocheng Liu, Griffin, P.B., Plummer, J.D.

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Single-Crystal GaAs and GaSb on Insulator on Bulk Si Substrates Based on Rapid Melt Growth von Shu-Lu Chen, Griffin, Peter B, Plummer, James D

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A High-Resolution Low-Power Incremental \Sigma\Delta ADC With Extended Range for Biosensor Arrays von Agah, Ali, Vleugels, Katelijn, Griffin, Peter B, Ronaghi, Mostafa, Plummer, James D, Wooley, Bruce A

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Rapid Melt Growth of Single Crystal InGaAs on Si Substrates von Griffin, Peter B., Mukherjee, Niloy, Chen, Chien-Yu, Bai, Xue, Plummer, James D.

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Impact ionization MOS (I-MOS)-Part I: device and circuit simulations von Gopalakrishnan, K., Griffin, P.B., Plummer, J.D.

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Scalable Device for Automated Microbial Electroporation in a Digital Microfluidic Platform von Madison, Andrew C, Royal, Matthew W, Vigneault, Frederic, Chen, Liji, Griffin, Peter B, Horowitz, Mark, Church, George M, Fair, Richard B

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Activation and diffusion studies of ion-implanted p and n dopants in germanium von Chui, Chi On, Gopalakrishnan, Kailash, Griffin, Peter B., Plummer, James D., Saraswat, Krishna C.

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Si incorporation from the seed into Ge stripes crystallized using rapid melt growth von Bai, Xue, Chen, Chien-Yu, Griffin, Peter B., Plummer, James D.

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P-Channel Germanium FinFET Based on Rapid Melt Growth von Jia Feng, Raymond Woo, Shulu Chen, Yaocheng Liu, Griffin, P.B., Plummer, J.D.

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Droplet-Based Pyrosequencing Using Digital Microfluidics von Boles, Deborah J, Benton, Jonathan L, Siew, Germaine J, Levy, Miriam H, Thwar, Prasanna K, Sandahl, Melissa A, Rouse, Jeremy L, Perkins, Lisa C, Sudarsan, Arjun P, Jalili, Roxana, Pamula, Vamsee K, Srinivasan, Vijay, Fair, Richard B, Griffin, Peter B, Eckhardt, Allen E, Pollack, Michael G

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Resistive switching mechanism in ZnxCd1-xS nonvolatile memory devices von ZHENG WANG, GRIFFIN, Peter B, MCVITTIE, Jim, WONG, Simon, MCINTYRE, Paul C, NISHI, Yoshio

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Critical thickness enhancement of epitaxial SiGe films grown on small structures von Liang, Yue, Nix, William D., Griffin, Peter B., Plummer, James D.

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Impact ionization MOS (I-MOS)-Part II: experimental results von Gopalakrishnan, K., Woo, R., Jungemann, C., Griffin, P.B., Plummer, J.D.

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Germanium In Situ Doped Epitaxial Growth on Si for High-Performance n+/p-Junction Diode von YU, Hyun-Yong, CHENG, Szu-Lin, GRIFFIN, Peter B, NISHI, Yoshio, SARASWAT, Krishna C

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High-Performance Gate-All-Around GeOI p-MOSFETs Fabricated by Rapid Melt Growth Using Plasma Nitridation and ALD Al2O3 Gate Dielectric and Self-Aligned NiGe Contacts von JIA FENG, THAREJA, Gaurav, KOBAYASHI, Masaharu, SHULU CHEN, POON, Andrew, YUN BAI, GRIFFIN, Peter B, WONG, Simon S, NISHI, Yoshio, PLUMMER, James D

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A Novel Depletion-IMOS (DIMOS) Device With Improved Reliability and Reduced Operating Voltage von Onal, C., Woo, R., Koh, H.-Y.S., Griffin, P.B., Plummer, J.D.

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Low-Temperature Monolithic Three-Layer 3-D Process for FPGA von Zhang, Zhiping, Chen, Chien-Yu, Crnogorac, Filip, Chen, Shu-Lu, Griffin, Peter B., Pease, R. Fabian, Plummer, James D., Wong, S. Simon

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Silicon orientation effects in the initial regime of wet oxidation von NGAU, Julie L, GRIFFIN, Peter B, PLUMMER, James D

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