Accurate machine learning-based germination detection, prediction and quality assessment of three grain crops von Genze, Nikita, Bharti, Richa, Grieb, Michael, Schultheiss, Sebastian J, Grimm, Dominik G

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Improved weed segmentation in UAV imagery of sorghum fields with a combined deblurring segmentation model von Genze, Nikita, Wirth, Maximilian, Schreiner, Christian, Ajekwe, Raymond, Grieb, Michael, Grimm, Dominik G

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Manually annotated and curated Dataset of diverse Weed Species in Maize and Sorghum for Computer Vision von Genze, Nikita, Vahl, Wouter K., Groth, Jennifer, Wirth, Maximilian, Grieb, Michael, Grimm, Dominik G.

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Investigation of the reliability of 4H–SiC MOS devices for high temperature applications von Le-Huu, Martin, Schmitt, Holger, Noll, Stefan, Grieb, Michael, Schrey, Frederik F., Bauer, Anton J., Frey, Lothar, Ryssel, Heiner

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Deep learning-based early weed segmentation using motion blurred UAV images of sorghum fields von Genze, Nikita, Ajekwe, Raymond, Güreli, Zeynep, Haselbeck, Florian, Grieb, Michael, Grimm, Dominik G.

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Electrical Impact of the Aluminum P-Implant Annealing on Lateral MOSFET Transistors on 4H-SiC N-Epi von Scholten, Dick, Noll, Stefan, Bauer, Anton J., Frey, Lothar, Grieb, Michael

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NMOS Logic Circuits Using 4H-SiC MOSFETs for High Temperature Applications von Ryssel, Heiner, Haeublein, Volker, Bauer, Anton J., Grieb, Michael, Schmitt, H., Schrey, Frederik F., Le-Huu, Martin, Frey, L.

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Reliability of Nitrided Gate Oxides for N- and P-Type 4H-SiC(0001) Metal--Oxide--Semiconductor Devices von Noborio, Masato, Grieb, Michael, Bauer, Anton J, Peters, Dethard, Friedrichs, Peter, Suda, Jun, Kimoto, Tsunenobu

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4H-SiC N-MOSFET Logic Circuits for High Temperature Operation von Ryssel, Heiner, Haeublein, Volker, Bauer, Anton J., Grieb, Michael, Schmitt, H., Schrey, Frederik F., Le-Huu, Martin, Frey, Lothar

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Reliability of Nitrided Gate Oxides for N- and P-Type 4H-SiC(0001) Metal–Oxide–Semiconductor Devices von Noborio, Masato, Grieb, Michael, Bauer, Anton J., Peters, Dethard, Friedrichs, Peter, Suda, Jun, Kimoto, Tsunenobu

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Influence of the Oxidation Temperature and Atmosphere on the Reliability of Thick Gate Oxides on the 4H-SiC C(000-1) Face von Friedrichs, Peter, Ryssel, Heiner, Peters, Dethard, Bauer, Anton J., Grieb, Michael

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Trench-MOSFETs on 4H-SiC von Noll, Stefan, Grieb, Michael, Banzhaf, Christian T., Scholten, Dick, Schwaiger, Stephan

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Influence of Annealing, Oxidation and Doping on Conduction-Band near Interface Traps in 4H-SiC Characterized by Low Temperature Conductance Measurements von Rambach, Martin, Scholten, Dick, Noll, Stefan, Bauer, Anton J., Grieb, Michael, Frey, Lothar

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Impact of Post-Trench Processing on the Electrical Characteristics of 4H-SiC Trench-MOS Structures with Thick Top and Bottom Oxides von Frey, Lothar, Bauer, Anton J., Banzhaf, Christian T., Grieb, Michael, Rambach, Martin

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Influence of Post-Implantation Annealing Temperature on MOSFET Performance and Oxide Reliability von Scholten, Dick, Rambach, Martin, Noll, Stefan, Grieb, Michael

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Investigation of Trenched and High Temperature Annealed 4H-SiC von Frey, Lothar, Trautmann, Achim, Bauer, Anton J., Banzhaf, Christian T., Grieb, Michael

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Influence of Diverse Post-Trench Processes on the Electrical Performance of 4H-SiC MOS Structures von Frey, Lothar, Trautmann, Achim, Banzhaf, Christian T., Bauer, Anton J., Grieb, Michael

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Characterization of Diverse Gate Oxides on 4H-SiC 3D Trench-MOS Structures von Trautmann, Achim, Bauer, Anton J., Banzhaf, Christian T., Frey, Lothar, Grieb, Michael

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Effect of Shallow n-Doping on Field Effect Mobility in p-Doped Channels of 4H-SiC MOS Field Effect Transistors von Rambach, Martin, Scholten, Dick, Noll, Stefan, Frey, Lothar, Grieb, Michael, Bauer, Anton J.

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Comparison of the Threshold-Voltage Stability of SiC MOSFETs with Thermally Grown and Deposited Gate Oxides von Friedrichs, Peter, Ryssel, Heiner, Noborio, Masato, Peters, Dethard, Bauer, Anton J., Grieb, Michael, Kimoto, Tsunenobu

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