Strategic Overview of High-Voltage SiC Power Device Development Aiming at Global Energy Savings von Wang, Gang Yao, Allen, Scott T., Burk, Albert A., O'Loughlin, Michael J., Sung, Woong Je, Cheng, Lin, Palmour, John W., Pala, Vipindas, Scozzie, Charles, Agarwal, Anant K., Grider, David E., Brunt, Edward V., Huang, Alex Q.

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Impact of carrier lifetime enhancement using high temperature oxidation on 15 kV 4H-SiC P-GTO thyristor von Ryu, S., Lichtenwalner, D., Van Brunt, E., Capell, C., O'Loughlin, M., Jonas, C., Lemma, Y., Zhang, J., Richmond, J., Burk, A., Hull, B., O'Brien, H., Ogunniyi, A., Lelis, A., Casady, J., Grider, D., Allen, S., Palmour, J.

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The placemat protocol: Measuring preschoolers' healthy-meal schemas with pretend meals von Harrison, Kristen, Peralta, Mericarmen, Jacobsohn, Gwen Costa, Grider, David T.

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15 kV IGBTs in 4H-SiC von Burk, Albert A., Grider, David, Lam, Khiem, Ryu, Sei Hyung, Agarwal, Anant, Hefner, Allen, Richmond, Jim, Jonas, Charlotte, Capell, Craig, Cheng, Lin, Clayton, Jack, Palmour, John W., O'Loughlin, Michael J.

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Short-Circuit Degradation of 10-kV 10-A SiC MOSFET von Eni, Emanuel-Petre, Beczkowski, Szymon, Munk-Nielsen, Stig, Kerekes, Tamas, Teodorescu, Remus, Juluri, Raghavendra Rao, Julsgaard, Brian, VanBrunt, Edward, Hull, Brett, Sabri, Shadi, Grider, David, Uhrenfeldt, Christian

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15 kV n-GTOs in 4H-SiC von Allen, Scott, Hull, Brett, Richmond, Jim, O'Brien, Heather, Jonas, Charlotte, Ryu, Sei Hyung, Burk, Albert A., Casady, Jeff, Grider, David, Capell, Craig, Lemma, Yemane, Palmour, John W., McCain, Matthew, O’Loughlin, Michael, Sabri, Shadi, van Brunt, Edward, Ogunniyi, Aderinto, Lelis, Aivars J., Lichtenwalner, Daniel J.

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Reliability of SiC Power Devices against Cosmic Ray Neutron Single-Event Burnout von Allen, Scott, Hull, Brett, Grider, David, Palmour, John W., Akturk, Akin, Richmond, Jim, Lichtenwalner, Daniel J., Barbieri, Thomas, McGarrity, James

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Static and Dynamic Characterization of a 3.3 Kv, 45 A 4H-Sic MOSFET von Sabri, Shadi, Hull, Brett, Baliga, B. Jayant, Bhattacharya, Subhashish, Grider, David, Anurag, Anup, Vechalapu, Kasunaidu, Acharya, Sayan, Han, Ki Jeong, van Brunt, Edward, Gohil, Ghanshyamsinh

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10 kV, 120 A SiC half H-bridge power MOSFET modules suitable for high frequency, medium voltage applications von Das, M. K., Capell, C., Grider, D. E., Raju, R., Schutten, M., Nasadoski, J., Leslie, S., Ostop, J., Hefner, A.

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Blocking Performance Improvements for 4H-SiC P-GTO Thyristors with Carrier Lifetime Enhancement Processes von Zhang, Qing Chun, Allen, Scott, Hull, Brett, Richmond, Jim, Lichtenwalner, Daniel J., Jonas, Charlotte, Ryu, Sei Hyung, O'Brien, Heather, Casady, Jeff, Grider, David, O'Loughlin, Michael, Capell, Craig, Lemma, Yemane, Palmour, John W., McCain, Matthew, Sabri, Shadi, van Brunt, Edward, Burk, Albert, Ogunniyi, Aderinto, Lelis, Aivars J.

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An Analysis of Forward Conduction Characteristics of Ultra High Voltage 4H-SiC N-IGBTs von Ryu, Sei Hyung, Clayton, Jack, Allen, Scott, Richmond, Jim, Grider, David, Capell, Craig, Lemma, Yemane, Palmour, John W., O’Loughlin, Michael, Lam, Khiem, Jonas, Charlotte, van Brunt, Edward

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New Insight into Single-Event Radiation Failure Mechanisms in Silicon Carbide Power Schottky Diodes and MOSFETs von Raman, Ashok, Galloway, Kenneth F., Schrimpf, Ronald D., Reed, Robert A., Arslanbekov, Robert, Johnson, Robert A., Lauenstein, Jean-Marie, Ball, Dennis R., Sternberg, Andrew L., Alles, Michael L., Grider, David, Witulski, Arthur F., Hutson, John M., Javanainen, Arto, Lichtenwalner, Daniel J.

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Modification of transition metal catalysts with rare-earth elements von Dyakonov, Alexander J, Grider, David A, McCormick, B.Jack, Kahol, Pawan K

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10 kV SiC Power MOSFETs and JBS Diodes: Enabling Revolutionary Module and Power Conversion Technologies von Raju, Ravi, Grider, David, Schutten, Michael, Leslie, Scott, Hefner, Allen, Das, Mrinal K.

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Performance of Hybrid 4.5 kV SiC JBS Freewheeling Diode and Si IGBT von Duong, T.H., Grider, David, Ryu, Sei Hyung, Hefner, A.R., Hobart, Karl D., Ortiz-Rodriguez, J.M., Ray, B., Kub, Fritz J., Leslie, Scott, Sherbondy, J., Imhoff, Eugene A.

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Smolder of Cellulosic Fabrics. III. The Control of Radical Driven Reactions von Dyakonov, Alexander J., Grider, David A.

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Comparison of 4.5 kV SiC JBS and Si PiN diodes for 4.5 kV Si IGBT anti-parallel diode applications von Duong, T, Hefner, A, Hobart, K, Ryu, S, Grider, D, Berning, D, Ortiz-Rodriguez, J M, Imhoff, E, Sherbondy, J

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Large-signal characteristics of AlGaN/GaN power MODFETs von Alekseev, E., Pavlidis, D., Nguyen, N.X., Nguyen, C., Grider, D.E.

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Characterization of 15 kV SiC n-IGBT and its application considerations for high power converters von Kadavelugu, Arun, Bhattacharya, Subhashish, Sei-Hyung Ryu, Van Brunt, Edward, Grider, David, Agarwal, Anant, Leslie, Scott

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Power performance and scalability of AlGaN/GaN power MODFETs von Alekseev, E., Pavlidis, D., Nguyen, N.X., Chanh Nguyen, Grider, D.E.

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