Control of epitaxial defects for optimal AlGaN/GaN HEMT performance and reliability von Green, D.S., Gibb, S.R., Hosse, B., Vetury, R., Grider, D.E., Smart, J.A.

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The surface chemistry of H2O on clean and oxygen-covered Cu(110) von BANGE, K, GRIDER, D.E, MADEY, T.E, SASS, J.K

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Electron beam melting in microfocus X-ray tubes von Grider, D E, Wright, A, Ausburn, P K

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Power performance and scalability of AlGaN/GaN power MODFETs von Alekseev, E., Pavlidis, D., Nguyen, N.X., Chanh Nguyen, Grider, D.E.

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Analysis of V/III incorporation in nonstoichiometric GaAs and InP films using SIMS von DOCTER, D. P, IBBETSON, J. P, GAO, Y, MISHRA, U. K, LIU, T, GRIDER, D. E

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Quantum-well p-channel AlGaAs/InGaAs/GaAs heterostructure insulated-gate field-effect transistors von Ruden, P.P., Shur, M., Arch, D.K., Daniels, R.R., Grider, D.E., Nohava, T.E.

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AlGaAs/InGaAs/GaAs quantum well doped channel heterostructure field effect transistors von Ruden, P.P., Shur, M., Akinwande, A.I., Nohava, J.C., Grider, D.E., Baek, J.

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Electron velocity saturation in heterostructure field-effect transistors von Han, C.-J., Ruden, P.P., Nohava, T.E., Narum, D.H., Grider, D.E., Newstrom, K., Joslyn, P., Shur, M.S.

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Valence band photoemission study of the coadsorption of CO and K on Cu{100} von Somerton, C., McConville, C.F., Woodruff, D.P., Grider, D.E., Richardson, N.V.

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Coadsorption of sodium and oxygen on Cu{110}: Evidence for a sodium peroxide surface species von Grider, D.E., Wendelken, J.F.

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SiC power devices for Smart Grid systems von Palmour, J W, Zhang, J Q, Das, M K, Callanan, R, Agarwal, A K, Grider, D E

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GaN MODFET microwave power technology for future generation radar and communications systems von Grider, D.E, Nguyen, N.X, Nguyen, C

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Water adsorption on bromine-covered copper single crystal surfaces von Bange, K., Döhl, R., Grider, D.E., Sass, J.K.

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10 kV, 120 A SiC half H-bridge power MOSFET modules suitable for high frequency, medium voltage applications von Das, M. K., Capell, C., Grider, D. E., Raju, R., Schutten, M., Nasadoski, J., Leslie, S., Ostop, J., Hefner, A.

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Calculation of photoemission intensities for Cu(111): Discontinuities at zone boundaries von Holloway, S., Grider, D.E., Sass, J.K.

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Gate current in self-aligned n-channel and p-channel pseudomorphic heterostructure field-effect transistors von Schuermeyer, F.L., Shur, M., Grider, D.E.

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A 500-MHz 16×16 complex multiplier using self-aligned gate GaAs heterostructure FET technology von AKINTUNDE IBITAYO AKINWANDE, MACTAGGART, I. R, BETZ, B. K, GRIDER, D. E, LANGE, T. H, NOHAVA, J. C, TETZLAFF, D. E, ARCH, D. K

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A self-aligned gate III-V heterostructure FET process for ultrahigh-speed digital and mixed analog/digital LSI/VLSI circuits von Akinwande, A.I., Ruden, P.P., Vold, P.J., Han, C.-J., Grider, D.E., Narum, D.H., Nohava, T.E., Nohava, J.C., Arch, D.K.

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Coadsorption Systems with Electrochemical Relevance: Coadsorption of Water with Oxygen, Bromine and Sodium on Cu(110) von Grider, D E, Bange, K, Sass, J K, Paolucci, G

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Control of epitaxial defects for optimal A1GaN/GaN HEMT performance and reliability von GREEN, D. S, GIBB, S. R, HOSSE, B, VETURY, R, GRIDER, D. E, SMART, J. A

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