Large spontaneous spin splitting in gate-controlled two-dimensional electron gases at normal In0.75Ga0.25As/In0.75Al0.25As heterojunctions von Sato, Y., Kita, T., Gozu, S., Yamada, S.

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Heteroepitaxial growth of GaSb on Si(0 0 1) substrates von Akahane, Kouichi, Yamamoto, Naokatsu, Gozu, Shin-ichiro, Ohtani, Naoki

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High-resolution X-ray diffraction analysis of InGaAs/AlAsSb coupled double quantum wells grown by molecular beam epitaxy von Mozume, T., Gozu, S.

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Surface photovoltage and photoreflectance study of InGaAs/AlAsSb quantum wells von Mozume, T., Gozu, S.

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Exciton spin relaxation in In0.53Ga0.47As/AlAs0.56Sb0.44 quantum wells von Sasayama, K., Nakanishi, S., Yamaguchi, R., Oyanagi, Y., Ushimi, T., Gozu, S., Mozume, T., Tackeuchi, A.

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Interband transitions in strained InGaAs/AlAsSb multiple-quantum-well structures von Mozume, T., Gozu, S.

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Over 1.3 μm CW laser emission from InGaSb quantum-dot vertical-cavity surface-emitting laser on GaAs substrate von YAMAMOTO, N, AKAHANE, K, GOZU, S, OHTANI, N

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Study of InAsN quantum dots on GaAs substrates by molecular beam epitaxy von Ueta, A., Akahane, K., Gozu, S., Yamamoto, N., Ohtani, N.

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Microwave induced Shubnikov–de Hass-type oscillation in InGaAs/InAlAs heterostructures von Fujii, K., Onishi, K., Yamada, S., Gozu, S.

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Metamorphic InGaAs/AlAsSb quantum wells grown on GaAs substrates for intersubband devices operating toward short-wavelength region von GOZU, S, UETA, A, YAMAMOTO, N, AKAHANE, K, OHTANI, N, TSUCHIYA, M

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Molecular beam epitaxy and characterization of InGaAs∕AlAs∕AlAsSb coupled double quantum wells with extremely thin coupling barriers von Mozume, T., Gozu, S.

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Large spontaneous spin-splitting and enhanced effective g-factor in two-dimensional electron gases at In0.75Ga0.25As/In0.75Al0.25As metamorphic heterojunctions von Kita, T, Sato, Y, Gozu, S, Yamada, S

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Photoreflectance study of InGaAs/AlAsSb coupled double quantum wells von Mozume, T., Gozu, S.

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Intersubband absorption generation through silicon ion implantation in undoped InGaAs/AlAsSb coupled double quantum wells towards monolithic integration of intersubband-transition-... von Cong, G W, Akimoto, R, Gozu, S, Mozume, T, Hasama, T, Ishikawa, H

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InGaAs/AlAs/InAlAs coupled double quantum wells for intersubband transition devices operating at 1550 nm von GOZU, Shin-Ichiro, MOZUME, Teruo, KUWATSUKA, Haruhiko, ISHIKAWA, Hiroshi

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Spin-splitting transport in In0.75Ga0.25As/In0.75Al0.25As quantum wire field-effect-transistor von Sato, Y

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Over 1.3 μ m continuous-wave laser emission from InGaSb quantum-dot laser diode fabricated on GaAs substrates von Yamamoto, Naokatsu, Akahane, Kouichi, Gozu, Shinichirou, Ohtani, Naoki

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Stacking of over 150 layers of InAs quantum dots on InP(311)B substrates von Akahane, K., Yamamoto, N., Gozu, S., Ohtani, N.

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Initial growth stage of GaSb on Si(0 0 1) substrates with AlSb initiation layers von Akahane, Kouichi, Yamamoto, Naokatsu, Gozu, Shin-ichiro, Ueta, Akio, Ohtani, Naoki

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Spontaneous spin-splitting observed in resonant tunneling diode with narrow band-gap asymmetric quantum well von Yamada, S., Kikutani, T., Gozu, S., Sato, Y., Kita, T.

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