Atomic layer deposition of high-k dielectrics on III–V semiconductor surfaces von Gougousi, Theodosia

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Deposition of yttrium oxide thin films in supercritical carbon dioxide von Gougousi, Theodosia, Chen, Zhiying

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In situ infrared spectroscopy study of the interface self-cleaning during the atomic layer deposition of HfO2 on GaAs(100) surfaces von Ye, Liwang, Gougousi, Theodosia

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Properties of atomic layer deposited HfO2 thin films von HACKLEY, Justin C, GOUGOUSI, Theodosia

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Low-Temperature Dopant-Assisted Crystallization of HfO2 Thin Films von Gougousi, Theodosia

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Atmospheric pressure plasma enhanced chemical vapor deposition of hydrophobic coatings using fluorine-based liquid precursors von Yim, Jacqueline H., Rodriguez-Santiago, Victor, Williams, André A., Gougousi, Theodosia, Pappas, Daphne D., Hirvonen, James K.

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Low-Temperature Dopant-Assisted Crystallization of HfO 2 Thin Films von Gougousi, Theodosia

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Impact of barrier thickness on transistor performance in AlN/GaN high electron mobility transistors grown on free-standing GaN substrates von Deen, David A., Storm, David F., Meyer, David J., Bass, Robert, Binari, Steven C., Gougousi, Theodosia, Evans, Keith R.

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High Electron Velocity Submicrometer AlN/GaN MOS-HEMTs on Freestanding GaN Substrates von Meyer, D. J., Deen, D. A., Storm, D. F., Ancona, M. G., Katzer, D. S., Bass, R., Roussos, J. A., Downey, B. P., Binari, S. C., Gougousi, T., Paskova, T., Preble, E. A., Evans, K. R.

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Metal Oxide Thin Films Deposited from Metal Organic Precursors in Supercritical CO2 Solutions von Gougousi, Theodosia, Barua, Dipak, Young, Erin D, Parsons, Gregory N

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Indium Diffusion and Native Oxide Removal during the Atomic Layer Deposition (ALD) of TiO2 Films on InAs(100) Surfaces von Ye, Liwang, Gougousi, Theodosia

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Properties of La-silicate high- K dielectric films formed by oxidation of La on silicon von Gougousi, Theodosia, Kelly, M. Jason, Terry, David B., Parsons, Gregory N.

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Diffusion and interface evolution during the atomic layer deposition of TiO2 on GaAs(100) and InAs(100) surfaces von Ye, Liwang, Gougousi, Theodosia

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Native oxide transport and removal during the atomic layer deposition of Ta2O5 on InAs(100) surfaces von Henegar, Alex J., Gougousi, Theodosia

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In situ infrared spectroscopy study of the surface reactions during the atomic layer deposition of TiO2 on GaAs (100) surfaces von Ye, Liwang, Kropp, Jaron A., Gougousi, Theodosia

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Interface Between Atomic Layer Deposition Ta2O5 Films and GaAs(100) Surfaces von Gougousi, Theodosia, Ye, Liwang

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Carbonate formation during post-deposition ambient exposure of high-k dielectrics von Gougousi, Theodosia, Niu, Dong, Ashcraft, Robert W., Parsons, Gregory N.

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Diffusion and interface evolution during the atomic layer deposition of TiO{sub 2} on GaAs(100) and InAs(100) surfaces von Ye, Liwang, Gougousi, Theodosia

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Native oxide transport and removal during the atomic layer deposition of Ta{sub 2}O{sub 5} on InAs(100) surfaces von Henegar, Alex J., Gougousi, Theodosia

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Indium Diffusion and Native Oxide Removal during the Atomic Layer Deposition (ALD) of TiO 2 Films on InAs(100) Surfaces von Ye, Liwang, Gougousi, Theodosia

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