Tungsten work function engineering for dual metal gate nano-CMOS von EFAVI, J. K, MOLLENHAUER, T, WAHLBRINK, T, GOTTLOB, H. D. B, LEMME, M. C, KURZ, H

Volltext

Nanoscale TiN metal gate technology for CMOS integration von Lemme, M.C., Efavi, J.K., Mollenhauer, T., Schmidt, M., Gottlob, H.D.B., Wahlbrink, T., Kurz, H.

Volltext

Gentle FUSI NiSi metal gate process for high- k dielectric screening von Gottlob, H.D.B., Lemme, M.C., Schmidt, M., Echtermeyer, T.J., Mollenhauer, T., Kurz, H., Cherkaoui, K., Hurley, P.K., Newcomb, S.B.

Volltext

Highly selective etch process for silicon-on-insulator nano-devices von Wahlbrink, T., Mollenhauer, T., Georgiev, Y.M., Henschel, W., Efavi, J.K., Gottlob, H.D.B., Lemme, M.C., Kurz, H., Niehusmann, J., Bolivar, P. Haring

Volltext

Charge trapping in ultrathin Gd2O3 high-k dielectric von NAZAROV, A. N, GOMENIUK, Y. V, GOMENIUK, Y. Y, GOTTLOB, H. D. B, SCHMIDT, M, LEMME, M. C, CZEMOHORSKY, M, OSTEN, H. J

Volltext

Nickel-silicide process for ultra-thin-body SOI-MOSFETs von Schmidt, M., Mollenhauer, T., Gottlob, H.D.B., Wahlbrink, T., Efavi, J.K., Ottaviano, L., Cristoloveanu, S., Lemme, M.C., Kurz, H.

Volltext

High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy von Raeissi, B., Piscator, J., Engström, O., Hall, S., Buiu, O., Lemme, M.C., Gottlob, H.D.B., Hurley, P.K., Cherkaoui, K., Osten, H.J.

Volltext

Integration of Gd silicate/TiN gate stacks into SOI n-MOSFETs von Schmidt, M., Stefani, A., Gottlob, H.D.B., Kurz, H.

Volltext

Stability of crystalline Gd2O3 thin films on silicon during rapid thermal annealing von Czernohorsky, M, Tetzlaff, D, Bugiel, E, Dargis, R, Osten, H J, Gottlob, H D B, Schmidt, M, Lemme, M C, Kurz, H

Volltext

Leakage current effects on C - V plots of high- k metal-oxide-semiconductor capacitors von Lu, Y., Hall, S., Tan, L. Z., Mitrovic, I. Z., Davey, W. M., Raeissi, B., Engström, O., Cherkaoui, K., Monaghan, S., Hurley, P. K., Gottlob, H. D. B., Lemme, M. C.

Volltext

CMOS integration of epitaxial Gd2O3 high-k gate dielectrics von GOTTLOB, H. D. B, ECHTERMEYER, T, OSTEN, H.-J, FISSEL, A, MOLLENHAUER, T, EFAVI, J. K, SCHMIDT, M, WAHLBRINK, T, LEMME, M. C, KURZ, H, CZERNOHORSKY, M, BUGIEL, E

Volltext

Scaling potential and MOSFET integration of thermally stable Gd silicate dielectrics von Gottlob, H.D.B., Schmidt, M., Stefani, A., Lemme, M.C., Kurz, H., Mitrovic, I.Z., Davey, W.M., Hall, S., Werner, M., Chalker, P.R., Cherkaoui, K., Hurley, P.K., Piscator, J., Engström, O., Newcomb, S.B.

Volltext

Introduction of crystalline high- k gate dielectrics in a CMOS process von Gottlob, H.D.B., Lemme, M.C., Mollenhauer, T., Wahlbrink, T., Efavi, J.K., Kurz, H., Stefanov, Y., Haberle, K., Komaragiri, R., Ruland, T., Zaunert, F., Schwalke, U.

Volltext

Mobility extraction in SOI MOSFETs with sub 1 nm body thickness von Schmidt, M., Lemme, M.C., Gottlob, H.D.B., Driussi, F., Selmi, L., Kurz, H.

Volltext

Charging Phenomena at the Interface Between High-k Dielectrics and SiOx Interlayers von Engström, Olof, Raeissi, Bahman, Piscator, Johan, Mitrovic, Ivona Z, Hall, Stephen, Gottlob, Heinrich D. B., Schmidt, Mathias, Hurley, Paul K., Cherkaoui, Karim

Volltext

Navigation aids in the search for future high- k dielectrics: Physical and electrical trends von Engström, O., Raeissi, B., Hall, S., Buiu, O., Lemme, M.C., Gottlob, H.D.B., Hurley, P.K., Cherkaoui, K.

Volltext

Comparison of metal gate electrodes on MOCVD HfO2 von LEMME, M. C, EFAVI, J. K, GOTTLOB, H. D. B, MOLLENHAUER, T, WAHLBRINK, T, KURZ, H

Volltext

Trapping in GdSiO high- k films von Rao, R., Simoncini, R., Gottlob, H. D. B., Schmidt, M., Irrera, F.

Volltext

Interface defects in HfO2, LaSiOx, and Gd2O3 high-k/metal-gate structures on silicon von Hurley, P. K., Cherkaoui, K., O'Connor, E., Lemme, Max C., Gottlob, H. D. B., Schmidt, M., Hall, S., Lu, Y., Buiu, O., Raeissi, B., Piscator, J., Engstrom, O., Newcomb, S. B.

Volltext

Stability of crystalline Gd(2)O(3) thin films on silicon during rapid thermal annealing von Czernohorsky, M., Tetzlaff, D., Bugiel, E., Dargis, R., Osten, H. J., Gottlob, H. D. B., Schmidt, M., Lemme, Max C., Kurz, H.

Volltext