Advanced CMOS devices: Challenges and implant solutions von Colombeau, Benjamin, Guo, Baonian, Gossmann, Hans-Joachim, Khaja, Fareen, Pradhan, Nilay, Waite, Andrew, Rao, K. V., Thomidis, Christos, Shim, Kyu-Ha, Henry, Todd, Variam, Naushad

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Junction formation and its device impact through the nodes: From single to coimplants, from beam line to plasma, from single ions to clusters, and from rapid thermal annealing to l... von Gossmann, Hans-Joachim L.

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'Abnormal' angle response curves of TW/Rs for near zero tilt and high tilt channeling implants von Guo Baonian, Gossmann, Hans-Joachim, Toh, Terry, Colombeau, Benjamin, Todorov, Stan, Sinclair, Frank, Shim, Kyu-Ha, Henry, Todd

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Ion implantation in advanced planar and vertical devices von Gossmann, Hans-Joachim L.

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Impact of extension implant energy purity and angle on the electrical characteristics of a 65 nm device technology von Gossmann, Hans-Joachim L., Rubin, Leonard, Parrill, Tom, Agarwal, Aditya

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Predictive process simulation of cryogenic implants for leading edge transistor design von Gossmann, Hans-Joachim, Zographos, Nikolas, Park, Hugh, Colombeau, Benjamin, Parrill, Thomas, Khasgiwale, Niranjan, Borges, Ricardo, Gull, Ronald, Erokhin, Yuri, Synopsys Switzerland LLC, Thurgauerstrasse 40, 8050 Zuerich, Applied Materials, Inc., Varian Semiconductor Equipment Business Unit, 35 Dory Road, Gloucester, MA 01930, Synopsys Inc., 1101 Slater Road, Durham, NC 27703, Applied Materials, Inc., Varian Semiconductor Equipment Business Unit, 35 Dory Road, Gloucester, MA 01930

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Next Generation Angle Control for Medium Current and High Energy Implanters von Olson, Joseph C, Gupta, Atul, Gossmann, Hans-Joachim L, Rodier, Dennis

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Benefits of Zero Degree Single Wafer High Energy Implants for Advanced Semiconductor Device Fabrication von Lee, Woojin, Thanigaivelan, Thirumal, Gossmann, Hans-Joachim, Low, Russell, Colombeau, Benjamin, Lacey, Kerry, Merrill, Mark, Renau, Anthony

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Effect of ramp rates during rapid thermal annealing of ion implanted boron for formation of ultra-shallow junctions von Agarwal, Aditya, Gossmann, Hans-J., Fiory, Anthony T.

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Activation volume for boron diffusion in silicon and implications for strained films von Zhao, Yuechao, Aziz, Michael J., Gossmann, Hans-J., Mitha, Salman, Schiferl, David

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Interstitial defects in silicon from 1–5 keV Si+ ion implantation von Agarwal, Aditya, Haynes, Tony E., Eaglesham, David J., Gossmann, Hans-J., Jacobson, Dale C., Poate, John M., Erokhin, Yu. E.

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Pressure and stress effects on the diffusion of B and Sb in Si and Si-Ge alloys von Aziz, Michael J., Zhao, Yuechao, Gossmann, Hans-J., Mitha, Salman, Smith, Stephen P., Schiferl, David

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수평 GAA 나노-와이어 및 나노-슬래브 트랜지스터들 von GOSSMANN HANS JOACHIM, COLOMBEAU BENJAMIN

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Fin Doping by Hot Implant for 14nm FinFET Technology and Beyond von Wood, Bingxi Sun, Khaja, Fareen Adeni, Colombeau, Benjamin P, Sun, Shiyu, Waite, Andrew, Jin, Miao, Chen, Hao, Chan, Osbert, Thanigaivelan, Thirumal, Pradhan, Nilay, Gossmann, Hans-Joachim L, Sharma, Shashank, Chavva, Venkataramana R, Cai, Man-Ping, Okazaki, Motoya, Munnangi, Samuel Swaroop, Ni, Chi-Nung, Suen, Wesley, Chang, Chorng-Ping, Mayur, Abhilash, Variam, Naushad, Brand, Adam D

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Activation volume for antimony diffusion in silicon and implications for strained films von Zhao, Yuechao, Aziz, Michael J., Gossmann, Hans-J., Mitha, Salman, Schiferl, David

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Sputtering of Si with decaborane cluster ions von Sosnowski, Marek, Albano, Maria A., Li, Cheng, Gossmann, Hans-Joachim L., Jacobson, Dale C.

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Transient enhanced diffusion of B in Si implanted with decaborane cluster ions von SOSNOWSKI, Marek, ALBANO, Maria A, CHENG LI, GOSSMANN, Hans Joachim L, JACOBSON, Dale C

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N-도핑된 선택적 에피택셜 성장을 사용하여 NMOS 핀펫에 비-가시선 소스 드레인 연장부 형성 von GOSSMANN HANS JOACHIM LUDWIG, BAUER MATTHIAS, COLOMBEAU BENJAMIN

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3 차원 디바이스를 제조하기 위한 방법 von YOSHIDA NAOMI, GOSSMANN HANS JOACHIM L, SUN SHIYU, COLOMBEAU BENJAMIN

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Enhancing tensile stress and source/drain activation with Si:C with innovations in ion implant and millisecond laser spike annealing von Maynard, Helen, Hatem, Christopher, Gossmann, Hans-Joachim, Erokhin, Yuri, Variam, Naushad, Shaoyin Chen, Yun Wang

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