New fabrication technique for nano-MOS transistors with W=25 nm and L=25 nm using only conventional optical lithography von Horstmann, J.T., Goser, K.F.

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Monolithic integration of a silicon micromotor in combination with the CMOS drive circuit on one chip von Horstmann, J.T., Goser, K.F.

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Midbandgap materials for sub-100-nm MOS transistors von Vieregge, T., Horstmann, J.T., Goser, K.F.

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Threshold logic circuit design of parallel adders using resonant tunneling devices von Pacha, C., Auer, U., Burwick, C., Glosekotter, P., Brennemann, A., Prost, W., Tegude, F.-J., Goser, K.F.

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A low-power and high-performance CMOS fingerprint sensing and encoding architecture von Jung, S., Thewes, R., Scheiter, T., Goser, K.F., Weber, W.

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Matching analysis of deposition defined 50-nm MOSFET's von Horstmann, J.T., Hilleringmann, U., Goser, K.F.

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Tunnelling diode technology von Prost, W., Auer, U., Tegude, F.-J., Pacha, C., Goser, K.F., Duschl, R., Eberl, K., Schmidt, O.G.

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CMOS-compatible organic light-emitting diodes von Heinrich, L.M.H., Muller, J., Hilleringmann, U., Goser, K.F., Holmes, A., Do-Hoon Hwang, Stern, R.

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Hot-carrier degradation of p-MOSFET's under analog operation von Thewes, R., Brox, M., Goser, K.F., Weber, W.

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Implementation of artificial neural networks into hardware: Concepts and limitations von Goser, Karl F.

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Circuit and application aspects of tunnelling devices in a MOBILE configuration von Glösekötter, P., Pacha, C., Goser, K. F., Prost, W., Kim, S. O., van Husen, H., Reimann, T., Tegude, F. J.

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InP-based monolithically integrated RTD/HBT MOBILE for logic circuits von Otten, W., Glosekotter, P., Velling, P., Brennemann, A., Prost, W., Goser, K.F., Tegude, F.-J.

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Technology of a depth-2 full-adder circuit using the InP RTD/HFET MOBILE von Prost, W., Auer, U., Degenhardt, J., Brennemann, A., Pacha, C., Goser, K.F., Tegude, F.-J.

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Aspects of systems and circuits for nanoelectronics von Goser, K.F., Pacha, C., Kanstein, A., Rossmann, M.L.

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Manufacturability and robust design of nanoelectronic logic circuits based on resonant tunnelling diodes von Prost, W., Auer, U., Tegude, F.-J., Pacha, C., Goser, K. F., Janssen, G., van der Roer, T.

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The challenge of the VLSI technique to telecommunications systems von Goser, K.F.

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Aspects of systems and circuits for nanoelectronics: Nanometer-scale science and technology von GOSER, K. F, PACHA, C, KANSTEIN, A, ROSSMANN, M. L

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Circuit and application aspects of tunnelling devices in a MOBILE configuration: Nanoelectric circuits von GLÖSEKÖTTER, P, PACHA, C, GOSER, K. F, PROST, W, KIM, S. O, VAN HUSEN, H, REIMANN, T, TEGUDE, F. J

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Digital Circuit Design Based on the Resonant-Tunneling-Hetero-Junction-Bipolar-Transistor von Glosekotter, P., Pacha, C., Goser, K. F., Wirth, G. I., Prost, W., Auer, U., Agethen, M., Velling, P., Tegude, F. J.

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Experimental threshold logic implementations based on resonant tunnelling diodes von Prost, W., Kim, S.O., Glosekotter, P., Pacha, C., van Husen, H., Reimann, T., Goser, K.F., Tegude, F.-J.

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