Performance Enhancement of GeSn Transistor Laser with Symmetric and Asymmetric Multiple Quantum Well in the Base von Soumava Ghosh, Mukhopadhyay, Bratati, Sen, Gopa

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Optimization of different structural parameters of GeSn/SiGeSn Quantum Well Infrared Photodetectors (QWIPs) for low dark current and high responsivity von Ghosh, Soumava, Bhattacharyya, Anirban, Sen, Gopa, Mukhopadhyay, Bratati

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Performance analysis of GeSn/SiGeSn quantum well infrared photodetector in terahertz wavelength region von Ghosh, Soumava, Mukhopadhyay, Bratati, Sen, Gopa, Basu, P.K.

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Prediction of Large Enhancement of Electron Mobility in Direct Gap Ge1−xSnx Alloy von Mukhopadhyay, Bratati, Sen, Gopa, Basu, Rikmantra, Mukhopadhyay, Shyamal, Basu, Prasanta Kumar

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Study of the electrical parameters of a dual-material double-gate TFET using a strained type II staggered Ge1−x−ySixSny/Ge1−a−bSiaSnb heterojunction von Shaw, Namrata, Mukhopadhyay, Bratati, Sen, Gopa

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Study of Si-Ge-Sn based Heterobipolar Phototransistor (HPT) exploiting Quantum Confined Stark Effect and Franz Keldysh effect with and without resonant cavity von Ghosh, Soumava, Mukhopadhyay, Bratati, Sen, Gopa, Basu, P.K.

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Calculated Characteristics of a Transistor Laser Using Alloys of Gr‐IV Elements von Mukhopadhyay, Bratati, Sen, Gopa, De, Souradeep, Basu, Rikmantra, Chakraborty, Vedatrayee, Basu, Prasanta K.

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Maximum theoretical electron mobility in n-type Ge1−xSnx due to minimum doping requirement set by intrinsic carrier density von Mukhopadhyay, Shyamal, Mukhopadhyay, Bratati, Sen, Gopa, Basu, P. K.

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Type II band alignment in Ge1-x-ySixSny/Ge1-α-βSiαSnβ heterojunctions von Dey, Swagata, Mukhopadhyay, Bratati, Sen, Gopa, Basu, P.K.

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An analysis of successful litigation claims in childhood fatalities in England von Sen, Gopa, Keene, Jonathan, Raine, Joseph

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Prediction of Large Enhancement of Electron Mobility in Direct Gap Ge 1− x Sn x Alloy von Mukhopadhyay, Bratati, Sen, Gopa, Basu, Rikmantra, Mukhopadhyay, Shyamal, Basu, Prasanta Kumar

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Modeling of tunneling current density of GeC based double barrier multiple quantum well resonant tunneling diode von Dey, Swagata, Chakraborty, Vedatrayee, Mukhopadhyay, Bratati, Sen, Gopa

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An analytical approach of elimination of ambipolarity of DPDG- TFET using strained type II staggered SiGeSn heterostructure von Shaw, Namrata, Sen, Gopa, Mukhopadhyay, Bratati

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Ge/Si photodetectors and group IV alloy based photodetector materials von Basu, P. K., Das, N. R., Mukhopadhyay, Bratati, Sen, Gopa, Das, Mukul K.

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Study of High-Frequency Performance in GeSn-Based QWIP von Ghosh, Soumava, Dey, Swagata, Mukhopadhyay, Bratati, Sen, Gopa

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Calculation of Intrinsic Carrier Density of Ge1−xSnx Alloy, Its Temperature Dependence Around Room Temperature and Its Effect on Maximum Electron Mobility von Mukhopadhyay, Shyamal, Mukhopadhyay, Bratati, Sen, Gopa, Basu, P. K.

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SPECTRUM COORDINATION DEVICES, RADIO COMMUNICATION DEVICES, SPECTRUM COORDINATION METHODS, AND METHODS FOR CONTROLLING A RADIO COMMUNICATION DEVICE von ZHENG, Shoukang, OH, Ser Wah, GOPA, Sen, YANG, Daiqin

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Feasibilty of laser action in strained Ge and Group IV alloys on Si platform von Basu, P K, Sen, Gopa, Mukhopadhyay, Bratati

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SPECTRUM COORDINATION DEVICES, RADIO COMMUNICATION DEVICES, SPECTRUM COORDINATION METHODS, AND METHODS FOR CONTROLLING A RADIO COMMUNICATION DEVICE von YANG DAIQIN, GOPA SEN, OH SER WAH, ZHENG SHOUKANG

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SPECTRUM COORDINATION DEVICES, RADIO COMMUNICATION DEVICES, SPECTRUM COORDINATION METHODS, AND METHODS FOR CONTROLLING A RADIO COMMUNICATION DEVICE von YANG, DAIQIN, GOPA, SEN, OH, SER WAH, ZHENG, SHOUKANG

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