Characteristics of n-Channel MOSFETs With Tailored Source/Drain Extension for Mask ROM and EEPROM Applications von Yuan-Feng Chen, Jeng Gong, Wei-Jen Tung, Shang-Wei Chou, Jeng, E.S.

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Effect of Isothermal Aging on the Long-Term Reliability of Fine-Pitch Sn–Ag–Cu and Sn–Ag Solder Interconnects With and Without Board-Side Ni Surface Finish von Lee, Tae-Kyu, Duh, Jeng-Gong

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An Automated Permuting Capacitor Device for Calibration of IVDs von Hsu, Jimmy C., Jeng Gong, Chih-Fang Huang

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Ultralow Capacitance Transient Voltage Suppressor Design von Lo, Kuo-Hsuan, Huang, Chien-Hao, Weng, Wu-Te, Huang, Tsung-Yi, Su, Hung-Der, Gong, Jeng, Huang, Chih-Fang

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High-Performance 1-μm GaN n-MOSFET With MgO/MgO―TiO2 Stacked Gate Dielectrics von LEE, Ko-Tao, HUANG, Chih-Fang, JENG GONG, LEE, Chia-Tien

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A 700-V Device in High-Voltage Power ICs With Low On-State Resistance and Enhanced SOA von YANG, Fu-Jen, JENG GONG, SU, Ru-Yi, HUO, Ker-Hsiao, TSAI, Chun-Lin, CHENG, Chih-Chang, LIOU, Ruey-Hsin, TUAN, Hsiao-Chin, HUANG, Chih-Fang

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Improvement on Optical Properties of GaN Light-Emitting Diode With Mesh-Textured Sapphire Back Delineated by Laser Scriber von Lee, Ko-Tao, Lee, Yeeu-Chang, Chang, Jenq-Yang, Gong, Jeng

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The Conduction Characteristics of a 700 V Lateral Insulated-Gate Bipolar Transistor in a Junction Isolation Technology von Tsai, Ying-Chieh, Gong, Jeng, Chan, Wing-Chor, Wu, Shyi-Yuan, Lien, Chenhsin

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Dimension Dependence of Unusual HCI-Induced Degradation on N-Channel High-Voltage DEMOSFET von CHOU, Hsueh-Liang, HUANG, Chih-Fang, GONG, Jeng

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The Role of Pd in Sn-Ag-Cu Solder Interconnect Mechanical Shock Performance von Lee, Tae-Kyu, Zhou, Bite, Bieler, Thomas R., Tseng, Chien-Fu, Duh, Jeng-Gong

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Investigation on the Initial Hot-Carrier Injection in P-LDMOS Transistors With Shallow Trench Isolation Structure von Ru-Yi Su, Chiang, P.Y., Jeng Gong, Tsung Yi Huang, Chun-Lin Tsai, Chou, C.C., Liu, C.M.

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Improving the Electrostatic Discharge Robustness of a Junction Barrier Schottky Diode Using an Embedded p-n-p BJT von Chung-Yu Hung, Tzu-Cheng Kao, Jian-Hsing Lee, Jeng Gong, Kuo-Hsuan Lo, Hung-Der Su, Chih-Fang Haung

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Demonstration of 3500-V 4H-SiC Lateral MOSFETs von Lee, Wen-Shan, Lin, Cheng-Wei, Yang, Ming-Hsien, Huang, Chih-Fang, Gong, Jeng, Feng, Zhao

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Simple scheme to increase hold voltage for silicon-controlled rectifier von Hung, Chung-Yu, Kao, Tzu-Cheng, Lee, Jian-Hsing, Gong, Jeng, Huang, Tsung-Yi, Su, Hung-Der, Chang, Kuo-Cheng, Huang, Chih-Fang, Lo, Kuo-Hsuan

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Electrical Characteristics of Al2O3/TiO2/Al2O3 Nanolaminate MOS Capacitor on p-GaN With Post Metallization Annealing and (NH4)2SX Treatments von LEE, Ko-Tao, HUANG, Chih-Fang, JENG GONG, LIOU, Bo-Heng

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RESURF p-n Diode With a Buried Layer, a Comprehensive Study von YANG, Fu-Jen, JENG GONG, SU, Ru-Yi, TSAI, Chun-Lin, TUAN, Hsiao-Chin, HUANG, Chih-Fang

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Impact of the TiN barrier layer on the positive bias temperature instabilities of high-k/metal-gate field effect transistors von Huang, Da-Cheng, Gong, Jeng, Huang, Chih-Fang, Chung, Steve S.

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The Effect of Self-Heating in LDMOSFET Expansion Regime von Hsueh-Liang Chou, Ng, J. C. W., Ruey-Hsin Liou, Yu-Chang Jong, Hsiao-Chin Tuan, Chih-Fang Huang, Jeng Gong

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High detectivity InGaN-GaN multiquantum well p-n junction photodiodes von CHIOU, Yu-Zung, SU, Yan-Kuin, CHANG, Shoou-Jinn, JENG GONG, LIN, Yi-Chao, LIU, Sen-Hai, CHANG, Chia-Sheng

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Design of an RF Transmit/Receive Switch Using LDMOSFETs With High Power Capability and Low Insertion Loss von HU, Chih-Min, HUNG, Chung-Yu, CHU, Chun-Hsueh, CHANG, Da-Chiang, HUANG, Chih-Fang, GONG, Jeng, CHEN, Ching-Yu

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