GRASPING TYPE OPENING/CLOSING NOZZLE von NAMIKI MASARU, GONDA HAJIME

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Fractionation of radiocesium in soil, sediments, and aquatic organisms in Lake Onuma of Mt. Akagi, Gunma Prefecture using sequential extraction von Mori, Masanobu, Tsunoda, Kin-ichi, Aizawa, Shoichi, Saito, Yoichi, Koike, Yuko, Gonda, Takahiro, Abe, Shunji, Suzuki, Kyuma, Yuasa, Yumi, Kuge, Toshihiro, Tanaka, Hideki, Arai, Hajime, Watanabe, Shun, Nohara, Seiichi, Minai, Yoshitaka, Okada, Yukiko, Nagao, Seiya

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Side-Wall Measurement using Tilt-Scanning Method in Atomic Force Microscope von Murayama, Ken, Gonda, Satoshi, Koyanagi, Hajime, Terasawa, Tsuneo, Hosaka, Sumio

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Gas source molecular beam epitaxy growth of GaN on C-, A-, R- and M-plane sapphire and silica glass substrates von IWATA, K, ASAHI, H, ASAMI, K, KUROIWA, R, GONDA, S.-I

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Critical-Dimension Measurement using Multi-Angle-Scanning Method in Atomic Force Microscope von Murayama, Ken, Gonda, Satoshi, Koyanagi, Hajime, Terasawa, Tsuneo, Hosaka, Sumio

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High quality GaN growth on (0001) sapphire by ion-removed electron cyclotron resonance molecular beam epitaxy and first observation of (2×2) and (4×4) reflection high energy electr... von IWATA, K, ASAHI, H, YU, S. J, ASAMI, K, FUJITA, H, FUSHIDA, M, GONDA, S.-I

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GaN-Rich Side of GaNAs Grown by Gas Source Molecular Beam Epitaxy von Iwata, Kakuya, Asahi, Hajime, Asami, Kumiko, Kuroiwa, Reiko, Gonda, Shun-ichi

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Height Measurement Using High-Precision Atomic Force Microscope Scanner Combined with Laser Interferometers von Murayama, Ken, Gonda, Satoshi, Kinoshita, K., Koyanagi, Hajime, Terasawa, Tsuneo, Hosaka, Sumio

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Gas source molecular beam epitaxial growth of GaN1-xPx (x ≤ 0.015) using ion-removed electron cyclotron resonance radical cell von IWATA, K, ASAHI, H, ASAMI, K, GONDA, S.-I

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Gas source molecular beam epitaxy growth of GaN-rich side of GaNP alloys and their observation by scanning tunneling microscopy von KUROIWA, R, ASAHI, H, IWATA, K, KIM, S.-J, NOH, J.-H, ASAMI, K, GONDA, S.-I

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Scanning tunneling microscopy/spectroscopy study of self-organized quantum dot structures formed in GaP/InP short-period superlattices von NOH, J.-H, ASAHI, H, KIM, S.-J, GONDA, S.-I

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Vertical Quantum Confinement Effect on Optical Properties of Strain-Induced Quantum Dots Self-Formed in GaP/InP Short-Period Superlattices von Kim, Seong-Jin, Asahi, Hajime, Asami, Kumiko, Takemoto, Minori, Fudeta, Mayuko, Gonda, Shun-ichi

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New III-V compound semiconductors TlInGaP for 0.9 μm to over 10 μm wavelength range laser diodes and their first successful growth von ASAHI, H, YAMAMOTO, K, IWATA, K, GONDA, S.-I, OE, K

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Self-Organized Dot/Columnar Structures and Quasi-Perfect CuPt-Type Ordering in (GaP) n (InP) n Superlattices Grown on GaAs (N11) Substrates by Gas Source Molecular Beam Epitaxy von Kim, Seong-Jin, Asahi, Hajime, Takemoto, Minori, Asami, Kumiko, Misaichi Takeuchi, Misaichi Takeuchi, Shun-ichi Gonda, Shun-ichi Gonda

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Growth of TlInGaAs on InP by Gas-Source Molecular Beam Epitaxy von Takenaka, Keiichi, Asahi, Hajime, Koh, Hideki, Asami, Kumiko, Gonda, Shun-ichi, Oe, Kunishige

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Very low resistance ohmic contacts to n-GaN von HWE JAE LEE, SOON JAE YU, ASAHI, H, GONDA, S.-I, YOUNG HWAN KIM, JIN KOO RHEE, NOH, S. J

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In-situ selective area etching of GaAs in metalorganic molecular beam epitaxy chamber using trisdimethylaminoarsenic von HAYASHI, T, ASAHI, H, YAMAMOTO, K, HIDAKA, K.-I, GONDA, S.-I

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CuAu-Type Ordering Self-Formed by Growing GaP/InP Short-Period Superlattices on GaAs (011) Substrate von Kim, Seong-Jin, Asahi, Hajime, Asami, Kumiko, Gonda, Shun-ichi

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TlGaP layers grown on GaAs substrates by gas source molecular beam epitaxy von FUSHIDA, M, ASAHI, H, YAMAMOTO, K, KOH, I, ASAMI, K, GONDA, S.-I, OE, K

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Growth Temperature Dependence of Self-Formation Process of Quantum Dot Structures in GaP/InP Short-Period Superlattices Grown on GaAs (311)A Substrate von Noh, Joo-Hyong, Asahi, Hajime, Fudeta, Mayuko, Watanabe, Daisuke, Mori, Jun, Gonda, Shun-ichi

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