Advanced processing for mobility improvement in 4H-SiC MOSFETs: A review von Cabello, Maria, Soler, Victor, Rius, Gemma, Montserrat, Josep, Rebollo, José, Godignon, Philippe

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Electron, Neutron, and Proton Irradiation Effects on SiC Radiation Detectors von Rafi, Joan Marc, Pellegrini, Giulio, Godignon, Philippe, Ugobono, Sofia Otero, Rius, Gemma, Tsunoda, Isao, Yoneoka, Masashi, Takakura, Kenichiro, Kramberger, Gregor, Moll, Michael

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High-resolution mapping of infraslow cortical brain activity enabled by graphene microtransistors von Masvidal-Codina, Eduard, Illa, Xavi, Dasilva, Miguel, Calia, Andrea Bonaccini, Dragojević, Tanja, Vidal-Rosas, Ernesto E., Prats-Alfonso, Elisabet, Martínez-Aguilar, Javier, De la Cruz, Jose M., Garcia-Cortadella, Ramon, Godignon, Philippe, Rius, Gemma, Camassa, Alessandra, Del Corro, Elena, Bousquet, Jessica, Hébert, Clement, Durduran, Turgut, Villa, Rosa, Sanchez-Vives, Maria V., Garrido, Jose A., Guimerà-Brunet, Anton

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Position-resolved charge collection of silicon carbide detectors with an epitaxially-grown graphene layer von Lopez Paz, Ivan, Godignon, Philippe, Moffat, Neil, Pellegrini, Giulio, Rafí, Joan Marc, Rius, Gemma

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Thermomechanical Assessment of Die-Attach Materials for Wide Bandgap Semiconductor Devices and Harsh Environment Applications von Navarro, Luis A., Perpina, Xavier, Godignon, Philippe, Montserrat, Josep, Banu, Viorel, Vellvehi, Miquel, Jorda, Xavier

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60-700 K CTAT and PTAT Temperature Sensors with 4H-SiC Schottky Diodes von Pascu, Razvan, Pristavu, Gheorghe, Brezeanu, Gheorghe, Draghici, Florin, Godignon, Philippe, Romanitan, Cosmin, Serbanescu, Matei, Tulbure, Adrian

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Electronic interface and charge carrier density in epitaxial graphene on silicon carbide. A review on metal–graphene contacts and electrical gating von Aslanidou, Sofia, García-García, Alberto, Godignon, Philippe, Rius, Gemma

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Bidirectional Modulation of Neuronal Cells Electrical and Mechanical Properties Through Pristine and Functionalized Graphene Substrates von Zummo, Francesca, Esposito, Pietro, Hou, Huilei, Wetzl, Cecilia, Rius, Gemma, Tkatchenko, Raphaela, Guimera, Anton, Godignon, Philippe, Prato, Maurizio, Prats-Alfonso, Elisabet, Criado, Alejandro, Scaini, Denis

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A Survey of Wide Bandgap Power Semiconductor Devices von Millan, Jose, Godignon, Philippe, Perpina, Xavier, Perez-Tomas, Amador, Rebollo, Jose

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Micro-Raman and micro-transmission imaging of epitaxial graphene grown on the Si and C faces of 6H-SiC von Tiberj, Antoine, Camara, Nicolas, Godignon, Philippe, Camassel, Jean

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Bipolar Conduction Impact on Electrical Characteristics and Reliability of 1.2- and 3.5-kV 4H-SiC JBS Diodes von Brosselard, Pierre, Camara, Nicolas, Banu, Viorel, Jorda, Xavier, Vellvehi, Miquel, Godignon, Philippe, Millan, JosÉ

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Editorial von Roccaforte, Fabrizio, Godignon, Philippe

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Gate Oxide Stability of 4H-SiC MOSFETs under On/Off-State Bias-Temperature Stress von Bosca, Alberto, Millán, José, Martin-Horcajo, Sara, Tadjer, Marko J., Calle, Fernando, Berthou, Maxime, Constant, Aurore, Godignon, Philippe

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Almost Free Standing Graphene on SiC(000-1) and SiC(11-20) von Camassel, Jean, Caboni, Alessandra, Jouault, Benoit, Jabakhanji, Bilal, Consejo, Christophe, Camara, Nicolas, Godignon, Philippe

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Fabrication and Characterization of Epitaxial Graphene Field Effect Transistor Devices Based on a Monolithic Bottom Gate von García-García, Alberto, Aslanidou, Sofia, Godignon, Philippe, Rius, Gemma

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Edge Terminations for 4H-SiC Power Devices: A Critical Issue von Rebollo, José, Montserrat, Josep, Planson, Dominique, Godignon, Philippe

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SiC Integrated Circuit Control Electronics for High-Temperature Operation von Alexandru, Mihaela, Banu, Viorel, Jorda, Xavier, Montserrat, Josep, Vellvehi, Miquel, Tournier, Dominique, Millan, Jose, Godignon, Philippe

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Monolithically Integrated Temperature Sensor in Silicon Carbide Power MOSFETs von Berthou, Maxime, Godignon, Philippe, Millan, Jose

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State-of-the-art silicon carbide diode dosimeters for ultra-high dose-per-pulse radiation at FLASH radiotherapy von Fleta, Celeste, Pellegrini, Giulio, Godignon, Philippe, Rodríguez, Faustino Gómez, Paz-Martín, José, Kranzer, Rafael, Schüller, Andreas

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Breakdown voltage capability of vertical 4H–SiC power devices von Godignon, Philippe, Biscarrat, Jérôme, Tranchesset, Miya, Lavieville, Romain, Tournier, Dominique, Brosselard, Pierre, Montserrat, Josep

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