Structural determination of bilayer graphene on SiC(0001) using synchrotron radiation photoelectron diffraction von Razado-Colambo, I., Avila, J., Vignaud, D., Godey, S., Wallart, X., Woodruff, D. P., Asensio, M. C.

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Reference database for seismic ground-motion in Europe (RESORCE) von Akkar, S., Sandıkkaya, M. A., Şenyurt, M., Azari Sisi, A., Ay, B. Ö., Traversa, P., Douglas, J., Cotton, F., Luzi, L., Hernandez, B., Godey, S.

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Graphene growth by molecular beam epitaxy using a solid carbon source von Moreau, E., Ferrer, F. J., Vignaud, D., Godey, S., Wallart, X.

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Graphene growth by molecular beam epitaxy on the carbon-face of SiC von Moreau, E., Godey, S., Ferrer, F. J., Vignaud, D., Wallart, X., Avila, J., Asensio, M. C., Bournel, F., Gallet, J.-J.

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High-resolution angle-resolved photoemission spectroscopy study of monolayer and bilayer graphene on the C-face of SiC von Moreau, E., Godey, S., Wallart, X., Razado-Colambo, I., Avila, J., Asensio, M.-C., Vignaud, D.

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Thermal and compositional anomalies beneath the North American continent von Godey, S., Deschamps, F., Trampert, J., Snieder, R.

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Letter in reply to “Akthar N, Smith MJ, McKirdy S, Page RE. Surgical delay in the management of dog bite injuries in children, does it increase the risk of infection?” J Plast Reco... von Godey, S

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Initial stages of graphitization on SiC(000-1), as studied by phase atomic force microscopy von Ferrer, F. J., Moreau, E., Vignaud, D., Deresmes, D., Godey, S., Wallart, X.

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Atomic scale flattening, step formation and graphitization blocking on 6H- and 4H-SiC{0 0 0 1} surfaces under Si flux von Ferrer, F J, Moreau, E, Vignaud, D, Godey, S, Wallart, X

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Comparative Sb and As segregation at the InP on GaAsSb interface von Wallart, X., Godey, S., Douvry, Y., Desplanque, L.

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Superparamagnetism-induced mesoscopic electron focusing in topological insulators von Sessi, P., Rüßmann, P., Bathon, T., Barla, A., Kokh, K. A., Tereshchenko, O. E., Fauth, K., Mahatha, S. K., Valbuena, M. A., Godey, S., Glott, F., Mugarza, A., Gargiani, P., Valvidares, M., Long, N. H., Carbone, C., Mavropoulos, P., Blügel, S., Bode, M.

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Comparative study of erbium disilicide thin films grown in situ under ultrahigh vacuum or ex situ with a capping layer von Reckinger, N., Duţu, C.A., Tang, X., Dubois, E., Yarekha, D.A., Godey, S., Nougaret, L., Łaszcz, A., Ratajczak, J., Raskin, J.-P.

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Electronic properties of the high electron mobility Al0.56In0.44Sb/Ga0.5In0.5Sb heterostructure von Desplanque, L., Vignaud, D., Godey, S., Cadio, E., Plissard, S., Wallart, X., Liu, P., Sellier, H.

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Synthesis and electrical properties of fullerene-based molecular junctions on silicon substrate von Guérin, D., Lenfant, S., Godey, S., Vuillaume, D.

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Gold-free growth of GaAs nanowires on silicon: arrays and polytypism von Plissard, Sébastien, Dick, Kimberly A, Larrieu, Guilhem, Godey, Sylvie, Addad, Ahmed, Wallart, Xavier, Caroff, Philippe

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MBE growth of heavily carbon doped GaAsSb on InP for heterojunction bipolar transistor applications von Yarekha, D.A., Godey, S., Wallart, X., Colder, H., Zaknoune, M., Mollot, F.

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High On−Off Conductance Switching Ratio in Optically-Driven Self-Assembled Conjugated Molecular Systems von Smaali, Kacem, Lenfant, Stéphane, Karpe, Sandrine, Oçafrain, Maïténa, Blanchard, Philippe, Deresmes, Dominique, Godey, Sylvie, Rochefort, Alain, Roncali, Jean, Vuillaume, Dominique

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Doped Colloidal InAs Nanocrystals in the Single Ionized Dopant Limit von Biaye, Moussa, Amit, Yorai, Gradkowski, Kamil, Turek, Natalia, Godey, Sylvie, Makoudi, Younes, Deresmes, Dominique, Tadjine, Athmane, Delerue, Christophe, Banin, Uri, Mélin, Thierry

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CBr4 and be heavily doped InGaAs grown in a production MBE system von GODEYA, S, DHELLEMMES, S, WILK, A, ZAKNOUNE, M, MOLLOT, F

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The use of Stimulan in bone and joint infections: a prospective multicentre study von Mereddy, Praveen, Nallamilli, Somasekhar R., Gowda, Veda P., Kasha, Srinivas, Godey, Shashi K., Nallamilli, Rajyalakshmi R., GPRK, Rohit, Meda, Venu G. R.

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