Analysis of Ge segregation in Si using a simultaneous growth and exchange model von Godbey, D.J, Ancona, M.G

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Ge surface segregation at low temperature during SiGe growth by molecular beam epitaxy von Godbey, D. J., Lill, J. V., Deppe, J., Hobart, K. D.

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Surface segregation and structure of Sb-doped Si(100) films grown at low temperature by molecular beam epitaxy von Hobart, K.D., Godbey, D.J., Twigg, M.E., Fatemi, M., Thompson, P.E., Simons, D.S.

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Sb surface segregation and doping in Si(100) grown at reduced temperature by molecular beam epitaxy von HOBART, K. D, GODBEY, D. J, THOMPSON, P. E, SIMONS, D. S

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STRESS AND ITS EFFECT ON THE INTERDIFFUSION IN SI1-XGEX/SI SUPERLATTICES von PROKES, SM, GLEMBOCKI, OJ, GODBEY, DJ

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Single-crystal germanium grown on (1102) sapphire by molecular beam epitaxy von GODBEY, D. J, QADRI, S. B, TWIGG, M. E, RICHMOND, E. D

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GE PROFILE FROM THE GROWTH OF SIGE BURIED LAYERS BY MOLECULAR-BEAM EPITAXY von GODBEY, DJ, ANCONA, MG

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Copper diffusion in organic polymer resists and inter-level dielectrics von Godbey, D.J, Buckley, L.J, Purdy, A.P, Snow, A.W

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Distribution of Ge in O+ implanted silicon von TWIGG, M. E, ZVANUT, M. E, STAHLBUSH, R, GODBEY, D. J, JENKINS, W. C

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The preparation and characterization of rhenium modified Pt(111) and Pt(100), and platinum modified Re(0001) single crystal surfaces von Godbey, David J., Somorjai, Gabor A.

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Vapor deposition polymerization of 4-fluorostyrene and pentafluorostyrene von Bartlett, B., Buckley, L. J., Godbey, D. J., Schroeder, M. J., Fontenot, C., Eisinger, S.

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Stress and its effect on the interdiffusion in Si(1-x)Ge(x)/Si superlattices von PROKES, S M, GLEMBOCKI, O J, Godbey, D J

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Selective Removal of Si1 − x Ge x from (100) Si Using  HNO 3 and  HF von Godbey, D. J., Krist, A. H., Hobart, K. D., Twigg, M. E.

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Selective removal of Si sub(1-x)Ge sub(x) from (100) Si using HNO sub(3) and HF von Godbey, D J, Krist, A H, Hobart, K D, Twigg, M E

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The adsorption and desorption of hydrogen and carbon monoxide on bimetallic RePt(111) surfaces von Godbey, David J., Somorjai, G.A.

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Study of broad band photoluminescence from Si sub(1-x)Ge sub(x)/Si superlattices von Steiner, T D, Hengehold, R L, Yeo, Y K, Godbey, D J, Thompson, P E, Pomrenke, Gernot S

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POSTGROWTH ANNEALING OF LOW TEMPERATURE-GROWN SB-DOPED SI MOLECULAR-BEAM EPITAXIAL-FILMS von HOBART, KD, GODBEY, DJ, THOMPSON, PE

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Time-resolved optically detected magnetic resonance of luminescence from Si/Si1-xGex superlattices : Silicon molecular beam epitaxy von GLASER, E. R, KENNEDY, T. A, KLEIN, P. B, GODBEY, D. J, THOMPSON, P. E

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DISTRIBUTION OF GE IN 0+ IMPLANTED SILICON von TWIGG, ME, ZVANUT, ME, STAHLBUSH, R, GODBEY, DJ, JENKINS, WC

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Observation of a Trivalent Ge Defect in Oxygen Implanted SiGe Alloys von Carlos, W.E., Godbey, D.J., Zvanut, Mary Ellen, Twigg, Mark E., Stahlbush, Robert E.

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