Photonic band structure : the face-centered-cubic case employing nonspherical atoms von YABLONOVITCH, E, GMITTER, T. J, LEUNG, K. M

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Photonic band structure: the face-centered-cubic case von YABLONOVITCH, E, GMITTER, T. J

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30% external quantum efficiency from surface textured, thin-film light-emitting diodes von SCHNITZER, I, YABLONOVITCH, E, CANEAU, C, GMITTER, T. J, SCHERER, A

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Donor and acceptor modes in photonic band structure von YABLONOVITCH, E, GMITTER, T. J, MEADE, R. D, RAPPE, A. M, BROMMER, K. D, JOANNOPOULOS, J. D

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Ultrahigh spontaneous emission quantum efficiency, 99.7% internally and 72% externally, from AlGaAs/GaAs/AlGaAs double heterostructures von SCHNITZER, I, YABLONOVITCH, E, CANEAU, C, GMITTER, T. J

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Inhibited and enhanced spontaneous emission from optically thin AlGaAs/GaAs double heterostructures von Yablonovitch, E, Gmitter, TJ, Bhat, R

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Extreme selectivity in the lift-off of epitaxial GaAs films von YABLONOVITCH, E, GMITTER, T, HARBISON, J. P, BHAT, R

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Van der Waals bonding of GaAs epitaxial liftoff films onto arbitrary substrates von YABLONOVITCH, E, HWANG, D. M, GMITTER, T. J, FLOREZ, L. T, HARBISON, J. P

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Citrus Genomics von Talon, Manuel, Gmitter, Fred G.

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Unusually low surface-recombination velocity on silicon and germanium surfaces von YABLONOVITCH, E, ALLARA, D. L, CHANG, C. C, GMITTER, T, BRIGHT, T. B

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Nearly ideal electronic properties of sulfide coated GaAs surfaces von YABLONOVITCH, E, SANDROFF, C. J, BHAT, R, GMITTER, T

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Effects of passivating ionic films on the photoluminescence properties of GaAs von SKROMME, B. J, SANDROFF, C. J, YABLONOVITCH, E, GMITTER, T

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Auger recombination in silicon at low carrier densities von YABLONOVITCH, E, GMITTER, T

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Formation of silicon tips with < 1 nm radius von MARCUS, R. B, RAVI, T. S, GMITTER, T, CHIN, K, LIU, D, ORVIS, W. J, CIARLO, D. R, HUNT, C. E, TRUJILLO, J

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Photonic band structure: the face-centered-cubic case von Yablonovitch, E., Gmitter, T. J.

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Van der Waals bonding of GaAs on Pd leads to a permanent, solid-phase-topotaxial, metallurgical bond von YABLONOVITCH, E, SANDS, T, HWANG, D. M, SCHNITZER, I, GMITTER, T. J, SHASTRY, S. K, HILL, D. S, FAN, J. C. C

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High-power ultrafast laser diodes von Delfyett, P.J., Florez, L.T., Stoffel, N., Gmitter, T., Andreadakis, N.C., Silberberg, Y., Heritage, J.P., Alphonse, G.A.

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Band bending, Fermi level pinning, and surface fixed charge on chemically prepared GaAs surfaces von YABLONOVITCH, E, SKROMME, B. J, BHAT, R, HARBISON, J. P, GMITTER, T. J

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Nearly ideal InP/In0.53Ga0.47As heterojunction regrowth on chemically prepared In0.53Ga0.47As surfaces von Yablonovitch, E., Bhat, R., Zah, C. E., Gmitter, T. J., Koza, M. A.

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A 720 mV open circuit voltage SiOx:c-Si:SiOx double heterostructure solar cell von YABLONOVITCH, E, GMITTER, T, SWANSON, R. M, KWARK, Y. H

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