Electrical and optical properties of graphite/ZnO nanorods heterojunctions von Yatskiv, R., Brus, V.V., Verde, M., Grym, J., Gladkov, P.

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Photoluminescence properties of GaSb epitaxial layers passivated in hydrogen plasma von Gladkov, P.

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Below band-gap optical absorption and photoluminescence excitation spectroscopy at room temperature in low-defect-density bulk GaN:Fe von Gladkov, P., Hulicius, E., Paskova, T., Preble, E., Evans, K. R.

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Misfit dislocation reduction in InGaAs epilayers grown on porous GaAs substrates von Dimitrakopulos, G.P., Bazioti, C., Grym, J., Gladkov, P., Hulicius, E., Pangrác, J., Pacherová, O., Komninou, Ph

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Structural and photoluminescent properties of low temperature InAs buffer layer grown by MOVPE on GaAs substrates von Komninou, Ph, Gladkov, P., Karakostas, Th, Pangrác, J., Pacherová, O., Vaniš, J., Hulicius, E.

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Morphology and origin of V-defects in semipolar (11–22) InGaN von Lotsari, A., Das, A., Kehagias, Th, Kotsar, Y., Monroy, E., Karakostas, Th, Gladkov, P., Komninou, Ph, Dimitrakopulos, G.P.

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Effect of Fe doping on optical properties of freestanding semi-insulating HVPE GaN:Fe von Gladkov, P., Humlíček, J., Hulicius, E., Šimeček, T., Paskova, T., Evans, K.

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Investigation of Er doped zinc borate glasses by low-temperature photoluminescence von Kostka, P., Kabalci, I., Tay, T., Gladkov, P., Zavadil, J.

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Growth and characterization of InAs layers obtained by liquid phase epitaxy from Bi solvents von Gladkov, P, Nohavica, D, Šourek, Z, Litvinchuk, A P, Iliev, M N

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Micropore modification in InP von Nohavica, D., Gladkov, P., Jarchovský, Z., Zelinka, J., Komninou, Ph, Delimitis, A., Kehagias, Th, Karakostas, Th

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Room temperature hydrogen sensing with the graphite/ZnO nanorod junctions decorated with Pt nanoparticles von Yatskiv, R., Grym, J., Gladkov, P., Cernohorsky, O., Vanis, J., Maixner, J., Dickerson, J.H.

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Photoluminescence of MOVPE-grown InAS and InAs1−xSbx: a systematic study von Vankova, V., Gladkov, P., Botha, J.R.

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Controlled growth of porous networks in phosphide semiconductors von Delimitis, A., Komninou, Ph, Kehagias, Th, Pavlidou, E., Karakostas, Th, Gladkov, P., Nohavica, D.

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InP p-type epitaxial layers grown with the addition of rare-earth elements for use in radiation detection von Zavadil, J, Prochazkova, O, Zdansky, K, Gladkov, P

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Growth and properties of AIIIBV QD structures for intermediate band solar cells von Vyskočil, J., Gladkov, P., Petříček, O., Hospodková, A., Pangrác, J.

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Growth and properties of A super(III)B super(V) QD structures for intermediate band solar cells von Vyskocil, J, Gladkov, P, Petricek, O, Hospodkova, A, Pangrac, J

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Optical properties of InP layers prepared with the addition of Ce, Tm and Lu in the growth melt von Zavadil, J., Prochazkova, O., Gladkov, P. S.

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Ce and Yb doped InP layers grown for radiation detection von Zavadil, J., Prochazkova, O., Zdansky, K., Gladkov, P.

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Structural and optical characterisation of thick InN epilayers grown with a single or two step growth process on GaN(0001) von Delimitis, A., Gladkov, P., Komninou, Ph, Kehagias, Th, Arvanitidis, J., Ves, S., Katsikini, M., Dimakis, E., Georgakilas, A.

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P-type InP grown by liquid phase epitaxy with rare earths: not intentional Ge acceptor doping von Zdánský, K., Zavadil, J., Procházková, O., Gladkov, P.

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