What Lies Ahead for Resistance-Based Memory Technologies? von Song, Yoon-Jong, Jeong, Gitae, Baek, In-Gyu, Choi, Jungdal

Volltext

The prospects of non-volatile phase-change RAM von KIM, Kinam, JEONG, Gitae

Volltext

O-band DFB laser heterogeneously integrated on a bulk-silicon platform von Shin, Dongjae, Cha, Jungho, Kim, Sunggu, Shin, Yongwhak, Cho, Kwansik, Ha, Kyoungho, Jeong, Gitae, Hong, Hyeongsun, Lee, Kyupil, Kang, Ho-Kyu

Volltext

Current status and future prospect of Phase Change Memory von Byeungchul Kim, Yoonjong Song, Sujin Ahn, Younseon Kang, Hoon Jeong, Dongho Ahn, Seokwoo Nam, Gitae Jeong, Chilhee Chung

Volltext

Microstructural Characterization in Reliability Measurement of Phase Change Random Access Memory von Bae, Junsoo, Hwang, Kyuman, Park, Kwangho, Jeon, Seongbu, Kang, Dae-hwan, Park, Soonoh, Ahn, Juhyeon, Kim, Seoksik, Jeong, Gitae, Chung, Chilhee

Volltext

Microstructural Characterization in Reliability Measurement of Phase Change Random Access Memory von Bae, Junsoo, Hwang, Kyuman, Park, Kwangho, Jeon, Seongbu, Kang, Dae-hwan, Park, Soonoh, Ahn, Juhyeon, Kim, Seoksik, Jeong, Gitae, Chung, Chilhee

Volltext

A 20nm 1.8V 8Gb PRAM with 40MB/s program bandwidth von Youngdon Choi, Ickhyun Song, Mu-Hui Park, Hoeju Chung, Sanghoan Chang, Beakhyoung Cho, Jinyoung Kim, Younghoon Oh, Duckmin Kwon, Jung Sunwoo, Junho Shin, Yoohwan Rho, Changsoo Lee, Min Gu Kang, Jaeyun Lee, Yongjin Kwon, Soehee Kim, Jaehwan Kim, Yong-Jun Lee, Qi Wang, Sooho Cha, Sujin Ahn, Horii, Hideki, Jaewook Lee, Kisung Kim, Hansung Joo, Kwangjin Lee, Yeong-Taek Lee, Jeihwan Yoo, Jeong, G.

Volltext

Memory Technologies for sub-40nm Node von Kinam Kim, Gitae Jeong

Volltext

Memory technologies in the nano-era: challenges and opportunities von Kinam Kim, Gitae Jeong

Volltext

A 0.1- \mu} 1.8-V 256-Mb Phase-Change Random Access Memory (PRAM) With 66-MHz Synchronous Burst-Read Operation von Sangbeom Kang, Woo Yeong Cho, Beak-Hyung Cho, Kwang-Jin Lee, Chang-Soo Lee, Hyung-Rok Oh, Byung-Gil Choi, Qi Wang, Hye-Jin Kim, Mu-Hui Park, Yu Hwan Ro, Suyeon Kim, Choong-Duk Ha, Ki-Sung Kim, Young-Ran Kim, Du-Eung Kim, Choong-Keun Kwak, Hyun-Geun Byun, Gitae Jeong, Hongsik Jeong, Kinam Kim, Shin, Y.

Volltext

What Lies Ahead for Resistance-Based Memory Technologies? : Next-Generation Memory von SONG, Yoon-Jong, GITAE JEONG, BAEK, In-Gyu, JUNGDAL CHOI

Volltext

A 0.1-μm 1.8-V 256-Mb phase-change random access memory (PRAM) with 66-MHz synchronous burst-read operation von KANG, Sangbeom, WOO YEONG CHO, YU HWAN RO, KIM, Suyeon, HA, Choong-Duk, KIM, Ki-Sung, KIM, Young-Ran, KIM, Du-Eung, KWAK, Choong-Keun, BYUN, Hyun-Geun, JEONG, Gitae, JEONG, Hongsik, CHO, Beak-Hyung, KIM, Kinam, SHIN, Yunsueng, LEE, Kwang-Jin, LEE, Chang-Soo, OH, Hyung-Rok, CHOI, Byung-Gil, QI WANG, KIM, Hye-Jin, PARK, Mu-Hui

Volltext

Memory technologies in the nano-era : challenges and opportunities von Kinam Kim, Gitae Jeong

Volltext

Emerging memory technologies von Kinam Kim, Gitae Jeong, Hongsik Jeong, Sungyung Lee

Volltext

Bulk-Si photonics technology for DRAM interface [Invited] von Byun, Hyunil, Bok, Jinkwon, Cho, Kwansik, Cho, Keunyeong, Choi, Hanmei, Choi, Jinyong, Choi, Sanghun, Han, Sangdeuk, Hong, Seokyong, Hyun, Seokhun, Jeong, T. J., Ji, Ho-Chul, Joe, In-Sung, Kim, Beomseok, Kim, Donghyun, Kim, Junghye, Kim, Jeong-Kyoum, Kim, Kiho, Kim, Seong-Gu, Kong, Duanhua, Kuh, Bongjin, Kwon, Hyuckjoon, Lee, Beomsuk, Lee, Hocheol, Lee, Kwanghyun, Lee, Shinyoung, Nam, Jeongsik, Nejadmalayeri, Amir, Park, Yongsang, Parmar, Sunil, Pyo, Junghyung, Shin, Dongjae, Shin, Joonghan, Shin, Yong-hwack, Suh, Sung-Dong, Yoon, Honggoo, Park, Yoondong, Choi, Junghwan, Ha, Kyoung-Ho, Jeong, Gitae

Volltext

Structural deformation and void formation driven by phase transformation in the Ge2Sb2Te5 film von Park, Seung Jong, Ahn, Min, Jeong, KwangSik, Jang, Moon Hyung, Cho, Mann-Ho, Song, Jae Yong, Ko, Dae-Hong, Ahn, Dong-ho, Nam, Seok-Woo, Jeong, Gitae

Volltext

A 0.18-μm 3.0-V 64-Mb nonvolatile phase-transition random access memory (PRAM) von WOO YEONG CHO, CHO, Beak-Hyung, HWANG, Youngnam, AHN, Sujin, KOH, Gwan-Hyeob, JEONG, Gitae, JEONG, Hongsik, KIM, Kinam, CHOI, Byung-Gil, OH, Hyung-Rok, KANG, Sangbeom, KIM, Ki-Sung, KIM, Kyung-Hee, KIM, Du-Eung, KWAK, Choong-Keun, BYUN, Hyun-Geun

Volltext

A 0.24- mu m 2.0-V 1T1MTJ 16-kb nonvolatile magnetoresistance RAM with self-reference sensing scheme von Jeong, Gitae, Cho, Wooyoung, Ahn, S, Jeong, Hongsik, Koh, Gwanhyeob, Hwang, Youngnam, Kim, K

Volltext

Reliability perspectives for high density PRAM manufacturing von Su Jin Ahn, Yoonjong Song, Hoon Jeong, Byeungchul Kim, Youn-Seon Kang, Dong-Ho Ahn, Yongwoo Kwon, Seok Woo Nam, Gitae Jeong, Hokyu Kang, Chilhee Chung

Volltext

Structural deformation and void formation driven by phase transformation in the Ge sub(2)Sb sub(2)Te sub(5) film von Park, Seung Jong, Ahn, Min, Jeong, KwangSik, Jang, Moon Hyung, Cho, Mann-Ho, Song, Jae Yong, Ko, Dae-Hong, Ahn, Dong-ho, Nam, Seok-Woo, Jeong, Gitae

Volltext