501 4SC-207, a novel and highly potent anti-mitotic agent, active also on P-gp expressing tumor cells resistant to other chemotherapeutic drugs, induces complete tumor stasis in vi... von Ammendola, A, Doblhofer, R, Strobl, S, Hamm, S, Schmidt, M, Gimmnich, P, Pekari, K, Zimmermann, A, Hentsch, B

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Amino-arsine and -phosphine compounds for the MOVPE of III–V semiconductors von Zimmermann, G., Protzmann, H., Marschner, T., Zsebök, O., Stolz, W., Göbel, E.O., Gimmnich, P., Lorberth, J., Filz, T., Kurpas, P., Richter, W.

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Metalorganic vapor phase epitaxy of InP using the novel P-source ditertiarybutyl phosphine (DitBuPH) von PROTZMANN, H, SPIKA, Z, SPILL, B, ZIMMERMANN, G, STOLZ, W, GÖBEL, E. O, GIMMNICH, P, LORBERTH, J

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In-situ formation of As-H functions by β-elimination of specific metalorganic arsenic compounds for the MOVPE of III/V semiconductors von Zimmermann, G., Protzmann, H., Stolz, W., Göbel, E.O., Gimmnich, P., Greiling, A., Lorberth, J., Thalmann, C., Rademann, K.

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GaAs substrate pretreatment and metalorganic vapour phase epitaxy of GaAs, AlAs and (AlGa) As using β-eliminating trialkyl-As precursors von Zimmermann, G., Spika, Z., Marschner, T., Spill, B., Stolz, W., Göbel, E.O., Gimmnich, P., Lorberth, J., Greiling, A., Salzmann, A.

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Investigations on deep traps in GaAs and (AlxGa1−x)As bulk layers grown by metalorganic vapour-phase epitaxy using the new alternative arsenic precursor diethyl-tert-butylarsin von Spika, Z., Zimmermann, G., Stolz, W., Göbel, E.O., Gimmnich, P., Lorberth, J., Greiling, A., Salzmann, A., Weiß, S., Sudjadi, U., Bock, A., Kassing, R.

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New alternative arsenic precursors for the metal-organic vapour-phase epitaxy of III–V semiconductors: in-situ formation of AsH functionality by β elimination of specific metal-or... von Gimmnich, P., Greiling, A., Lorberth, J., Thalmann, C., Rademann, K., Zimmermann, G., Protzmann, H., Stolz, W., Göbel, E.O.

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108 Profiling in vitro and in vivo of MS275, SAHA, LAQ824 and VPA as HDAC inhibitors currently tested in clinical trials von Beckers, T., Burkhardt, C., Wieland, H., Braunger, J., Gimmnich, P., Maier, T.

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New developments of less toxic group-V precursors for the metalorganic vapour phase epitaxy of III-V-semiconductors : In-situ-formation of As-H functions by thermal β-elimination o... von ZIMMERMANN, G, SPIKA, Z, MARSCHNER, T, STOLZ, W, GÖBEL, E. O, GIMMNICH, P, BECKER, R, LORBERTH, J, GREILING, A, SALZMANN, A

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Amino-arsine and -phosphorine compounds for the MOVPE of III-V semiconductors von ZIMMERMANN, G, PROTZMANN, H, RICHTER, W, MARSCHNER, T, ZSEBÖK, O, STOLZ, W, GÖBEL, E. O, GIMMNICH, P, LORBERTH, J, FILZ, T, KURPAS, P

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Properties of (GaIn)As and InP bulk epitaxial layers. (GaIn)As/InP-heterostructures and pin-detector device structures grown by using the alternative sources ditertiarybutyl-arsine... von Protzmann, H., Hohnsdorf, F., Spika, Z., Stolz, W., Gobel, E.O., Muller, M., Gimmnich, P., Lorberth, J., Scherb, J., Korber, W.

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In-Situ Formation of As-H-Functions by /spl beta/-Elimination of Specific Metalorganic Arsenic Compounds for the MOVPE of III/V-Semiconductors von Zimmerman, G., Protzmann, H., Stolz, W., Gobel, E.O., Gimmnich, P., Greiling, A., Lorberth, J., Thalmann, C., Rademann, K.

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Metalorganic vapour phase epitaxy of InP using the novel P-source ditertiarybutyl phosphine (DitBuPH) von Protzmann, H., Spika, Z., Spill, B., Zimmermann, G., Stolz, W., Gobel, E.O., Gimmnich, P., Lorberth, J.

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