Rethinking Classical Crystal Growth Models through Molecular Scale Insights: Consequences of Kink-Limited Kinetics von De Yoreo, J. J, Zepeda-Ruiz, L. A, Friddle, R. W, Qiu, S. R, Wasylenki, L. E, Chernov, A. A, Gilmer, G. H, Dove, P. M

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Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon von Stolk, P. A., Gossmann, H.-J., Eaglesham, D. J., Jacobson, D. C., Rafferty, C. S., Gilmer, G. H., Jaraíz, M., Poate, J. M., Luftman, H. S., Haynes, T. E.

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Carbon in silicon: Modeling of diffusion and clustering mechanisms von Pinacho, R., Castrillo, P., Jaraiz, M., Martin-Bragado, I., Barbolla, J., Gossmann, H.-J., Gilmer, G.-H., Benton, J.-L.

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Ion-beam processing of silicon at keV energies: A molecular-dynamics study von Caturla, M, Díaz de la Rubia T, Marqués, LA, Gilmer, GH

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B cluster formation and dissolution in Si: A scenario based on atomistic modeling von Pelaz, Lourdes, Gilmer, G. H., Gossmann, H.-J., Rafferty, C. S., Jaraiz, M., Barbolla, J.

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Simulations of carbon sputtering in amorphous hydrogenated samples von Marian, J, Zepeda-Ruiz, L A, Gilmer, G H, Bringa, E M, Rognlien, T

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B diffusion and clustering in ion implanted Si: The role of B cluster precursors von Pelaz, L., Jaraiz, M., Gilmer, G. H., Gossmann, H.-J., Rafferty, C. S., Eaglesham, D. J., Poate, J. M.

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Thin film deposition: fundamentals and modeling von Gilmer, G.H., Huang, Hanchen, Roland, Christopher

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Microstructure of thin tantalum films sputtered onto inclined substrates: Experiments and atomistic simulations von Dalla Torre, J., Gilmer, G. H., Windt, D. L., Kalyanaraman, R., Baumann, F. H., O’Sullivan, P. L., Sapjeta, J., Dı́az de la Rubia, T., Djafari Rouhani, M.

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Atomistic simulations of grain boundary pinning in CuFe alloys von Zepeda-Ruiz, Luis A., Gilmer, George H., Sadigh, Babak, Caro, Alfredo, Oppelstrup, Tomas, Hamza, Alex V.

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Semiconductor surface roughness: Dependence on sign and magnitude of bulk strain von Xie, YH, Gilmer, GH, Roland, C, Silverman, PJ, Buratto, SK, Cheng, JY, Fitzgerald, EA, Kortan, AR, Schuppler, S, Marcus, MA, Citrin, PH

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Atomistic calculations of ion implantation in Si: Point defect and transient enhanced diffusion phenomena von Jaraiz, M., Gilmer, G. H., Poate, J. M., de la Rubia, T. D.

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Multiscale Modeling of Thin-Film Deposition: Applications to Si Device Processing von Baumann, F.H., Chopp, D.L., de la Rubia, T. Díaz, Gilmer, G.H., Greene, J.E., Huang, H., Kodambaka, S., O'Sullivan, P., Petrov, I.

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Simulation of cluster evaporation and transient enhanced diffusion in silicon von Rafferty, C. S., Gilmer, G. H., Jaraiz, M., Eaglesham, D., Gossmann, H.-J.

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Activation and deactivation of implanted B in Si von Pelaz, Lourdes, Venezia, V. C., Gossmann, H.-J., Gilmer, G. H., Fiory, A. T., Rafferty, C. S., Jaraiz, M., Barbolla, J.

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The interstitial fraction of diffusivity of common dopants in Si von Gossmann, H.-J., Haynes, T. E., Stolk, P. A., Jacobson, D. C., Gilmer, G. H., Poate, J. M., Luftman, H. S., Mogi, T. K., Thompson, M. O.

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Crystallization of fcc (111) and (100) crystal-melt interfaces: A comparison by molecular dynamics for the Lennard-Jones system von BURKE, E, BROUGHTON, J. Q, GILMER, G. H

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Binding energy of vacancies to clusters formed in Si by high-energy ion implantation von Kalyanaraman, R., Haynes, T. E., Holland, O. W., Gossmann, H.-J. L., Rafferty, C. S., Gilmer, G. H.

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Ultrafast Dynamics of Laser-Excited Solids von Reis, D.A., Gaffney, K.J., Gilmer, G.H., Torralva, B.

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Effects of Microalloying on the Mobility and Mechanical Response of Interfaces in Nanocrystalline Cu von Caro, A., Zepeda-Ruiz, L. A., Farkas, Diana, Bringa, E. M., Gilmer, G. H.

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